Joe C Wang

US Patent:

6772509, Aug 10, 2004

Filed:

Jan 28, 2002

Appl. No.:

10/058650

Inventors:

Shiuh-Hui Steven Chen - Lake Zurich IL
Cheryl Field - Kildeer IL
Didier R. Lefebvre - Mundelein IL
Joe Pin Wang - Long Grove IL

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01R 4300

US Classification:

29825, 295646, 29743, 29832, 257678, 257618, 264571

Abstract:

A method of separating a thin die ( ) from a support body ( ) of a semiconductor wafer ( ). The thin die ( ) being initially attached to the support body ( ) by an attachment mechanism ( ). The attachment mechanism may be a plurality of tethers ( ) that extend between the thin die ( ) and the support body ( ). The method may include the steps of: positioning the wafer ( ) on a rigid backing ( ) having a hole ( ), the hole ( ) positioned beneath the thin die ( ); positioning a tip ( ) of a handler ( ) above the thin die ( ), the tip ( ) having a passageway ( ) to a vacuum source; positioning an ejection pin ( ) in a spaced apart relationship beneath the thin die ( ); moving the tip ( ) of the handler ( ) downward toward the thin die ( ) to break the attachment mechanism ( ) and clamp the thin die ( ) between the tip ( ) of the handler ( ) and the ejection pin ( ); and moving the ejection pin ( ) upward in the direction of the tip ( ) of the handler ( ) until the thin die ( ) is extracted from the wafer ( ).

US Patent:

6867543, Mar 15, 2005

Filed:

Mar 31, 2003

Appl. No.:

10/403637

Inventors:

Joe P. Wang - Long Grove IL, US
Cheryl B. Field - Kildeer IL, US
Michael Pfeifer - Northbrook IL, US

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01J019/70
H01J009/38

US Classification:

313553, 313481, 313549, 313561

Abstract:

A microdevice assembly () that includes a device microstructure (), a housing (), and a fine grain getter layer (). The housing () has a base portion () and a lid (). The device microstructure () is attached to the base portion () and the lid () is hermetically sealed to the base portion (). The housing () defines a cavity () surrounding the device microstructure (). The fine grain getter layer () is on an interior side () of the lid () for maintaining a vacuum in the cavity () surrounding the device microstructure (). The lid () may be made of metal or have at least a metallic surface in the region where the fine grain getter layer () is applied. The fine grain getter layer () has a sub-micron grain size. There is also a method for making the microdevice assembly ().

US Patent:

6427539, Aug 6, 2002

Filed:

Jul 31, 2000

Appl. No.:

09/629270

Inventors:

Shiuh-Hui Steven Chen - Lake Zurich IL
Yanling Kang - Northbrook IL
Joe P. Wang - Long Grove IL

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

G01L 904

US Classification:

73726

Abstract:

A reliable sensor provides a user-friendly semiconductor sensing device and transducer which accurately detects the characteristics of a fluid, such as pressure and strain, at high temperature operating conditions. The high performance sensor is particularly useful for use with diesel engines and internal combustion engines in vehicles. The sensor can comprise a single die with a transverse strain gauge or a group of strain gauges which are located at a position on the die to help minimize electric effects of thermal stress on the gauges during pressure detection and operation of the vehicle. The die can be glass fused, such as by glass frit, to a diaphragm, such as a stainless steel diaphragm, so as not to readily corrode in the fluid.

US Patent:

20200182728, Jun 11, 2020

Filed:

Oct 25, 2019

Appl. No.:

16/663851

Inventors:

- Auburn Hills MI, US
Joe Pin Wang - Deer Park IL, US
David W. Ivaska - Deer Park IL, US
Richard E. Cronin - Deer Park IL, US
Erich Mattmann - Schwalbach, DE
Frank Langner - Schwalbach, DE

Assignee:

Vitesco Technologies USA, LLC. - Auburn Hills MI

International Classification:

G01L 19/14
H05K 5/06
B23K 1/19
G01L 19/00
G01L 9/00

Abstract:

A pressure sensor assembly, which includes a support substrate, circuitry mounted to the support substrate, at least one conductor mounted to the support substrate and in electrical communication with the circuitry, and at least one vertically conductive path connected to and in electrical communication with the at least one conductor. The pressure sensor assembly also includes a diaphragm, at least one sealing glass section connected to the diaphragm and the support substrate, and at least one lateral conductive feed-through mounted to the diaphragm. At least one conductive joint is connected to the vertically conductive path and the lateral conductive feed-through, and the conductive joint provides electrical communication between the vertically conductive path and the lateral conductive feed-through.

US Patent:

20150091107, Apr 2, 2015

Filed:

Sep 27, 2013

Appl. No.:

14/040167

Inventors:

- Auburn Hills MI, US
Joe Pin Wang - Long Grove IL, US

International Classification:

B81C 3/00

US Classification:

257415, 438 51

Abstract:

A micro-electromechanical pressure transducer formed from a silicon die centers itself on a pedestal, formed from either a metal or a dielectric, by applying a predetermined amount of liquid epoxy adhesive to the square, top surface of the pedestal and allowing the liquid adhesive to distribute itself over the top surface. A MEMS die placed atop the liquid adhesive is centered on the top surface by surface tension between sides of the die and the top surface.

US Patent:

20140103468, Apr 17, 2014

Filed:

Oct 16, 2012

Appl. No.:

13/652739

Inventors:

- Auburn Hills MI, US
Joe Pin Wang - Long Grove IL, US

Assignee:

CONTINENTAL AUTOMOTIVE SYSTEMS, INC. - Auburn Hills MI

International Classification:

B81B 3/00
B81C 3/00

US Classification:

257419, 438 51, 257E29324, 257E21499

Abstract:

Thermally-induced stress on a silicon micro-electromechanical pressure transducer (MEMS sensor) is reduced by attaching the MEMS sensor to a plastic filled with low Cfillers that lowers the plastic's coefficient of thermal expansion (C) to be closer to that of silicon. The MEMS sensor is attached to the housing using an epoxy adhesive/silica filler mixture, which when cured has a Cbetween about ten PPM/ C. and about thirty PPM/ C. in order to match the housing C. The adhesive also has a glass transition temperature (Tg) above the operating temperature range. This design provides good sealing of the sensor and stable sensor outputs.