John B Bartholomew

Address:

7898 E Mary Sharon Dr, Scottsdale, AZ 85266

VIN:

1FMEU538X7UA51481

Make:

FORD

Model:

EXPLORER SPORT TRAC

Year:

2007

US Patent:

20110246686, Oct 6, 2011

Filed:

Apr 1, 2010

Appl. No.:

12/752303

Inventors:

Frederick George Fellenser - Paoli PA, US
John William Bartholomew - Phoenixville PA, US
Jia Tong - Chesterbrook PA, US

International Classification:

G06F 13/28

US Classification:

710 22

Abstract:

An apparatus and system having both PCI Root Port (RP) device and Direct Memory Access (DMA) End Point device functionality is disclosed. The apparatus is for use in an input/output (I/O) system interconnect module (IOSIM) device. A DMA/RP module includes a RP portion and one or more DMA/RP portions. The RP portion has one or more queue pipes and is configured to function as a standard PCIe Root Port device. Each of the DMA/RP portions includes DMA engines and DMA input and output channels, and is configured to behave more like an End Point device. The DMA/RP module also includes one or more PCIe hard core portions, an ICAM (I/O Caching Agent Module), and at least one PCIe service block (PSB). *The hard core portion couples the DMA/RP module and IOSIM device to an I/O device via a PCIe link, and the ICAM transitions data to a host memory device operating system.

US Patent:

56968035, Dec 9, 1997

Filed:

Aug 7, 1996

Appl. No.:

8/694653

Inventors:

John Howard Bartholomew - Austin TX

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

G11C 1900

US Classification:

377 64

Abstract:

A CMOS (complementary metal-oxide semiconductor) barrel shifter (40) is implemented using a plurality of cells (41-43, 58) for shifting bits of data. Each of the cells (41-43, 58) has two transistors (44-47, 49-52) and both transistors of each cell are of the same conductivity type. The four transistors (44-47) of two neighboring cells (41,42) are formed using a common active region (60). The layout design of the barrel shifter (40) is such that all of the transistors of one conductivity type are grouped together, and all of the transistors of the opposite conductivity type are grouped together and are formed in a single well region (55).