John W Berg

US Patent:

6436195, Aug 20, 2002

Filed:

Aug 22, 2000

Appl. No.:

09/643777

Inventors:

John A. Smythe - Boise ID
John E. Berg - Boise ID

Assignee:

ZiLOG, Inc. - San Jose CA

International Classification:

C23C 1600

US Classification:

118723, 118722, 118715, 438680, 438681, 438688

Abstract:

Deposited dielectric layers for a semiconductor device are typically formed in a chemical vapor deposition. Often a hydrogen by-product is formed. Especially in a plasma enhanced chemical vapor deposition process, the hydrogen by-product can form free radicals that are introduced into the dielectric layers. The hydrogen free radicals can affect the stability of the threshold and breakdown voltage of MOSFET transistors. Deuterium introduced into the CVD chamber competes to enter the dielectric layer with the hydrogen. The deuterium prevents some of the hydrogen free radicals from entering the dielectric layer and thus increases MOSFET reliability.

US Patent:

20020168855, Nov 14, 2002

Filed:

Jun 26, 2002

Appl. No.:

10/184326

Inventors:

John Smythe - Boise ID, US
John Berg - Boise ID, US

International Classification:

H01L021/44

US Classification:

438/680000

Abstract:

Deposited dielectric layers for a semiconductor device are typically formed in a chemical vapor deposition. Often a hydrogen by-product is formed. Especially in a plasma enhanced chemical vapor deposition process, the hydrogen by-product can form free radicals that are introduced into the dielectric layers. The hydrogen free radicals can affect the stability of the threshold and breakdown voltage of MOSFET transistors. Deuterium introduced into the CVD chamber competes to enter the dielectric layer with the hydrogen. The deuterium prevents some of the hydrogen free radicals from entering the dielectric layer and thus increases MOSFET reliability.

US Patent:

61658464, Dec 26, 2000

Filed:

Mar 2, 1999

Appl. No.:

9/260913

Inventors:

Timothy K. Carns - Meridian ID
John A. Smythe - Boise ID
John A. Ransom - Nampa ID
Bernice L. Kickel - Boise ID
John E. Berg - Palo Alto CA

Assignee:

Zilog, Inc. - Campbell CA

International Classification:

H01L 21336

US Classification:

438264

Abstract:

The improvement of thin tunnel oxides used in EEPROM and FLASH tecnologies using post-oxidation annealing in nitrogen causes defects in subsequent oxide films. These are manifested by oxide thinning at the bird's beak and result in high gate leakage. As the time and temperature to the post-oxidation annealing are increased for improved tunnel oxide performance, the number of defects increases rapidly. A method of realizing the improved tunnel oxide Q. sub. BD using higher post-oxidation time and temperature annealing while at the same time not degrading the quality of subsequent gate oxides is shown. The use of sacrificial oxidation and strip just prior to the transistor gate oxidation is described. This process removes the additional nitride which exists at the field edges, leading to the oxide thinning. As a result, improved tunnel oxide integrity can be achieved without degradation of high and low voltage transistors.

US Patent:

56532814, Aug 5, 1997

Filed:

Dec 20, 1995

Appl. No.:

8/575927

Inventors:

John Lawrence Berg - Houston TX
George Edward Kluppel - Richmond TX
William Joseph Oberjohn - Washington Township, Start County OH
Thomas Wayne Strock - Jackson Township, Stark County OH

Assignee:

Hudson Products Corporation - Houston TX

International Classification:

E28B 106
E28B 910

US Classification:

165113

Abstract:

An air-cooled steam condensing module with an integral vent condenser has a steam header, one or more rows of condensing tubes between the steam header and a (generally lower) common condensate header. The module also has at least one row of vent condenser or dephlegmator tubes located adjacent the condensing tubes which connect the lower header to a vent header. The dephlegmator tubes may be of the same or larger diameter than the condensing tubes.

US Patent:

59781270, Nov 2, 1999

Filed:

Sep 9, 1997

Appl. No.:

8/926226

Inventors:

John E. Berg - Boise ID

Assignee:

Zilog, Inc. - Campbell CA

International Classification:

G02B 101
G02B 111

US Classification:

359279

Abstract:

In a light phase grating device, by forming the beam with a bottom conductive layer, the beam will not stick to the conductive layer on the substrate. The triboelectric effect will not occur, because the bottom conductive layer of the beam will allow charges to dissipate.

US Patent:

61566535, Dec 5, 2000

Filed:

Nov 3, 1997

Appl. No.:

8/962828

Inventors:

John A. Smythe - Boise ID
John E. Berg - Boise ID

Assignee:

Zilog, Inc. - Campbell CA

International Classification:

H01L 2144

US Classification:

438680

Abstract:

Deposited dielectric layers for a semiconductor device are typically formed in a chemical vapor deposition. Often a hydrogen by-product is formed. Especially in a plasma enhanced chemical vapor deposition process, the hydrogen by-product can form free radicals that are introduced into the dielectric layers. The hydrogen free radicals can affect the stability of the threshold and breakdown voltage of MOSFET transistors. Deuterium introduced into the CVD chamber competes to enter the dielectric layer with the hydrogen. The deuterium prevents some of the hydrogen free radicals from entering the dielectric layer and thus increases MOSFET reliability.