John Christopher Chen

US Patent:

6642549, Nov 4, 2003

Filed:

Jul 15, 2002

Appl. No.:

10/197614

Inventors:

John Chen - Rowland Heights CA 91748
Bingwen Liang - Sunnyvale CA 94086
Robert Shih - Cernitos CA 90703

International Classification:

H01L 3300

US Classification:

257 99, 257 81, 257 94, 257 96, 257103

Abstract:

A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiO /Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.

US Patent:

6897494, May 24, 2005

Filed:

Jul 26, 2000

Appl. No.:

09/626443

Inventors:

John Chen - Los Angeles CA, US
Bingwen Liang - Santa Clara CA, US
Robert Shih - Los Angeles CA, US

Assignee:

Dalian Luming Science and Technology Group Co. Ltd. - Dalian

International Classification:

H01L033/00

US Classification:

257190, 257 99, 257103

Abstract:

A GaN based LED comprises: a three layer buffer which is a template for growth of a high quality I GaN platform for quality growth of subsequent layers; a light emitting structure; and complementary N and P electrode structures which spread current flowing between the electrodes fully across the light emitting structure.

US Patent:

7272161, Sep 18, 2007

Filed:

Sep 25, 2003

Appl. No.:

10/670876

Inventors:

John Chen - Rowland Heights CA, US
Robert Shih - Arcadia CA, US
Chun Lei - Los Gatos CA, US

Assignee:

Finisar Corporation - Sunnyvale CA

International Classification:

H01S 3/08

US Classification:

372107, 372 4301

Abstract:

A semiconductor laser formed from a semiconductor wafer has an active layer, at last two optical cladding layers, and a ridge waveguide. A ridge top surface of the ridge waveguide is deposited from a first surface of the semiconductor laser wafer by a first height. A plurality of semiconductor mesas are formed on the semiconductor laser wafer and have mesa top surfaces disposed from the first surface by a second height greater than the first height so that the plurality of semiconductor mesas shield the ridge waveguide from mechanical damage.

US Patent:

RE42636, Aug 23, 2011

Filed:

Apr 5, 2010

Appl. No.:

12/662196

Inventors:

John Chen - Rowland Heights CA, US
Bingwen Liang - Sunnyvale CA, US
Robert Shih - Cernitos CA, US

Assignee:

Dalian Lumei Optoelectronics Corporation - Dalian

International Classification:

H01L 33/00

US Classification:

257 99, 257 94, 257 96, 257103, 257E3307

Abstract:

A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiO/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.

US Patent:

20020154496, Oct 24, 2002

Filed:

Jun 13, 2002

Appl. No.:

10/167698

Inventors:

John Chen - Rowland Heights CA, US
Bingwen Liang - Sunnyvale CA, US
Robert Shih - Cernitos CA, US

International Classification:

H01L027/15

US Classification:

362/100000, 257/081000

Abstract:

A Light Emitting Diode (LED) constructed of AlGaInP compounds includes a multi layer window which improves the efficiency of the diode. The window, in the order of formation, includes a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer formed of Indium Tin Oxide (ITO), and a titanium gold contact. In one embodiment, the contact forms ohmic connections with the second and third layers; and a Shottky diode connection with first layer. In a second embodiment, the contact forms an ohmic connection with the third layer; and is insulated from direct contact with the first layer.

US Patent:

20040119988, Jun 24, 2004

Filed:

Oct 24, 2003

Appl. No.:

10/693773

Inventors:

John Chen - Rowland Heights CA, US
Chun Lei - Los Gatos CA, US
Robert Shih - Arcadia CA, US
Hongyu Deng - Arcadia CA, US

Assignee:

FINISAR CORPORATION

International Classification:

H04N007/18
H04N009/47
G01B011/14

US Classification:

356/615000, 348/086000

Abstract:

A device and method is disclosed for passively checking the concentricity measurement of optical components in an optical assembly. The optical assembly includes a package for a photonic device which has a header and a lens cap having an integrated lens. The photonic device is mounted to the header. A display system can be used to view the photonic device through the lens of the cap. Using a camera with a high magnification lens integrated into the display system, the alignment between the photonic device and the lens in the cap is measured.

US Patent:

20040135595, Jul 15, 2004

Filed:

Oct 29, 2003

Appl. No.:

10/696759

Inventors:

Wei Cai - Arcadia CA, US
John Chen - Rowland Heights CA, US
Chun Lei - Arcadia CA, US
Robert Shih - Arcadia CA, US

Assignee:

Finisar Corporation

International Classification:

G01R031/26
G01R031/02

US Classification:

324/767000, 324/760000

Abstract:

System and methods for life testing laser diodes is disclosed. The system includes a burn-in rack having a plurality of optoelectronic devices mounted within respective holders and electrical signal connectors that electrically couple the optoelectronic devices to a first electrical connector. A test apparatus holds the burn-in rack and has optical detectors arranged to receive electromagnetic radiation from the mounted optoelectronic devices and couple the output signals from the optical detectors to a second electrical connector. A computer electrically communicates with the connectors and generates a drive current deliverable to each optoelectronic device and receives data from the optical detectors that is based upon the output from each optoelectronic device. The measured optical power output from each optoelectronic device is stored at the computer and following analysis the optoelectronic devices are either removed from the rack or subjected to additional burn-in processes.

US Patent:

20140076403, Mar 20, 2014

Filed:

May 15, 2013

Appl. No.:

13/894590

Inventors:

John J. Chen - Arcadia CA, US
Jonathan R. Sommer - Santa Monica CA, US
Peter I. Djurovich - Long Beach CA, US
Kathryn R. Allen - Los Angeles CA, US

Assignee:

University of Southern California - Los Angeles CA
The Regents of the University of Michigan - Ann Arnor MI

International Classification:

H01L 51/00

US Classification:

136263, 548405, 2525011, 438 57

Abstract:

The present disclosure generally relates to organic photosensitive optoelectronic devices comprising at least one boron dipyrrin compound. In addition, the present disclosure relates to methods of making organic photosensitive optoelectronic devices comprising at least one boron dipyrrin compound. The present disclosure also generally relates to chromophoric compounds that combine strong absorption of light at visible wavelengths with the ability to undergo symmetry-breaking intramolecular charge transfer (ICT), and their use for the generation of free carriers in organic photovoltaic cells (OPVs) and electric-field-stabilized geminate polaron pairs. The present disclosure also relates to the synthesis of such compounds, methods of manufacture, and applications in photovoltaic systems and organic lasers.