John J Coppola

US Patent:

43129544, Jan 26, 1982

Filed:

Jun 5, 1975

Appl. No.:

5/584226

Inventors:

John A. Coppola - Lewiston NY
Lawrence N. Hailey - Niagara Falls NY
Carl H. McMurtry - Youngstown NY

Assignee:

Kennecott Corporation - Stamford CT

International Classification:

C04B 3556

US Classification:

501 90

Abstract:

Pressureless sintering of silicon carbide to produce ceramic bodies having 75% and greater theoretical densities, can be accomplished by firing shaped bodies, containing finely divided silicon carbide, boron source such as boron carbide, carbon source such as phenolic resin and a temporary binder, at a sintering temperature of from about 1900. degree. C. to about 2500. degree. C.

US Patent:

41359380, Jan 23, 1979

Filed:

Mar 31, 1977

Appl. No.:

5/783356

Inventors:

Yorihiro Murata - North Tonawanda NY
John A. Coppola - Lewiston NY
Carl H. McMurtry - Youngstown NY

Assignee:

The Carborundum Company - Niagara Falls NY

International Classification:

C04B 3556

US Classification:

106 44

Abstract:

A dense thermal shock resistant silicon carbide ceramic body and its method of manufacture which comprises heat sintering a shaped body comprising particulate silicon carbide and an additive selected from boron nitride, boron phosphide, aluminum diboride and mixtures thereof.

US Patent:

RE302864, May 27, 1980

Filed:

Mar 19, 1979

Appl. No.:

6/021878

Inventors:

John A. Coppola - Lewiston NY
Richard H. Smoak - Lewiston NY

Assignee:

The Carborundum Company - Niagara Falls NY

International Classification:

C04B 3556

US Classification:

264 65

Abstract:

Disclosure is made of a high-density, high-strength silicon carbide ceramic material that is produced using a silicon carbide powder containing boron or boron-containing compound as a densification additive by the utilization of boron in the sintering atmosphere.

US Patent:

43460496, Aug 24, 1982

Filed:

Jul 31, 1978

Appl. No.:

5/930435

Inventors:

John A. Coppola - Lewiston NY
Laurence N. Hailey - Niagara Falls NY
Carl H. McMurtry - Youngstown NY

Assignee:

Kennecott Corporation - Stamford CT

International Classification:

F27B 904

US Classification:

264 65

Abstract:

Pressureless sintered silicon carbide ceramic bodies, having an equiaxed microstructure and an alpha crystalline habit can be produced by firing shaped bodies, containing finely divided silicon carbide, boron source such as boron carbide, carbon source such as phenolic resin and a temporary binder, at a sintering temperature of from about 1900. degree. C. to about 2250. degree. C. , depending on the sintering atmosphere, under conditions such that a coating of carbon source is maintained on the finely divided silicon carbide, and sufficient boron is maintained within the shaped body during firing. Boron can be maintained within the shaped body by various techniques, such as the use of a "seasoned boat" or graphite container for the body being sintered, which has been saturated with boron by exposure to boron at or about the temperature of sintering. There is also disclosed a process for producing a sintered silicon carbide ceramic body, with or without the equiaxed crystal microstructure, from silicon carbide powders of alpha or beta crystal structure, or amorphous noncrystalline silicon carbide, or mixtures thereof.

US Patent:

41246675, Nov 7, 1978

Filed:

Apr 25, 1977

Appl. No.:

5/790354

Inventors:

John A. Coppola - Lewiston NY
Laurence N. Hailey - Niagara Falls NY
Carl H. McMurtry - Youngstown NY

Assignee:

The Carborundum Company - Niagara Falls NY

International Classification:

C04B 3552

US Classification:

264 295

Abstract:

Pressureless sintering of silicon carbide to produce ceramic bodies having 75% and greater theoretical densities, can be accomplished by firing shaped bodies, containing finely divided silicon carbide, boron source such as boron carbide, carbon source such as phenolic resin and a temporary binder, at a sintering temperature of from about 1900. degree. C to about 2500. degree. C.

US Patent:

41232860, Oct 31, 1978

Filed:

Dec 27, 1976

Appl. No.:

5/754648

Inventors:

John A. Coppola - Lewiston NY
Harry A. Lawler - Youngstown NY
Carl H. McMurtry - Youngstown NY

Assignee:

The Carborundum Company - Niagara Falls NY

International Classification:

C01B 3136

US Classification:

106 44

Abstract:

A powder containing substantial amounts of alpha phase silicon carbide suitable for use in subsequent sintering operations to obtain a high-density, high-strength ceramic product is described. The powder may consist substantially entirely of alpha silicon carbide or may consist of mixtures of alpha and beta phase silicon carbide. The silicon carbide powder of the present invention has an average particle size of from about 0. 10 to about 2. 50 microns and may contain maximum amounts of the following materials by weight based upon 100 parts of powder. ______________________________________ SiO. sub. 2 2. 00 Free Silicon 0. 25 Iron 0. 50 Alkali and Alkaline Earth Metals 0. 50 Total Metal Oxides 3.

US Patent:

41359372, Jan 23, 1979

Filed:

Mar 31, 1977

Appl. No.:

5/783140

Inventors:

Yorihiro Murata - North Tonawanda NY
John A. Coppola - Lewiston NY
Carl H. McMurtry - Youngstown NY

Assignee:

The Carborundum Company - Niagara Falls NY

International Classification:

C04B 3556

US Classification:

106 44

Abstract:

A method for making a dense thermal shock resistant silicon carbide ceramic body by hot pressing a blend of silicon carbide and from about 0. 2 to about 2 weight percent of aluminum diboride and the resulting body.

US Patent:

41792998, Dec 18, 1979

Filed:

Mar 26, 1979

Appl. No.:

6/024148

Inventors:

John A. Coppola - Lewiston NY
Laurence N. Hailey - Niagara Falls NY
Carl H. McMurtry - Youngstown NY

Assignee:

The Carborundum Company - Niagara Falls NY

International Classification:

C04B 3556

US Classification:

106 44

Abstract:

Pressureless sintered silicon carbide ceramic bodies, having an equiaxed microstructure and an alpha crystalline habit can be produced by firing shaped bodies, containing finely divided silicon carbide, boron source such as boron carbide, carbon source such as phenolic resin and a temporary binder, at a sintering temperature of from about 1900. degree. C. to about 2250. degree. C. , depending on the sintering atmosphere, under conditions such that a coating of carbon source is maintained on the finely divided silicon carbide, and sufficient boron is maintained within the shaped body during firing. Boron can be maintained within the shaped body by various techniques, such as the use of a "seasoned boat" or graphite container for the body being sintered, which has been saturated with boron by exposure to boron at or about the temperature of sintering. There is also disclosed a process for producing a sintered silicon carbide ceramic body, with or without the equiaxed crystal microstructure, from silicon carbide powders of alpha or beta crystal structure, or amorphous noncrystalline silicon carbide, or mixtures thereof.