John W Daugherty

US Patent:

20150337450, Nov 26, 2015

Filed:

Aug 4, 2015

Appl. No.:

14/817742

Inventors:

- Fremont CA, US
Lin XU - Katy TX, US
John Michael KERNS - Livermore CA, US
William CHARLES - Los Altos CA, US
John DAUGHERTY - Fremont CA, US
Sivakami RAMANATHAN - Fremont CA, US
Russell ORMOND - San Jose CA, US
Robert G. O'NEILL - Fremont CA, US
Tom STEVENSON - Morgan Hill CA, US

Assignee:

LAM RESEARCH CORPORATION - Fremont CA

International Classification:

C25D 11/02
H01L 21/67
C23C 28/00
C23C 24/00
C25D 11/16
C25D 11/12

Abstract:

A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

US Patent:

20140295670, Oct 2, 2014

Filed:

Mar 27, 2013

Appl. No.:

13/851605

Inventors:

- Fremont CA, US
Lin Xu - Katy TX, US
John Michael Kerns - Livermore CA, US
William Charles - Los Altos CA, US
John Daugherty - Fremont CA, US
Sivakami Ramanathan - Fremont CA, US
Russell Ormond - San Jose CA, US
Robert G. O'Neill - Fremont CA, US
Tom Stevenson - Morgan Hill CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/3065
H01L 21/02
C25D 11/02
H01L 21/67

US Classification:

438710, 428629, 428623, 428613, 438758, 427401, 118723 I, 15634548, 205190

Abstract:

A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

US Patent:

20140127911, May 8, 2014

Filed:

Nov 7, 2012

Appl. No.:

13/670940

Inventors:

- Fremont CA, US
Lin Xu - Katy TX, US
Rajinder Dhindsa - San Jose CA, US
Travis Taylor - Fremont CA, US
John Daugherty - Fremont CA, US

Assignee:

LAM RESEARCH CORPORATION - Fremont CA

International Classification:

H01L 21/67
H01L 21/02
H01L 21/3065
C25D 7/04
C25D 7/00

US Classification:

438710, 15634548, 15634534, 118723 I, 428652, 428629, 205265, 205151, 205153, 438758

Abstract:

A palladium plated aluminum component of a semiconductor plasma processing chamber comprises a substrate including at least an aluminum or aluminum alloy surface, and a palladium plating on the aluminum or aluminum alloy surface of the substrate. The palladium plating comprises an exposed surface of the component and/or a mating surface of the component.