John J Drab

US Patent:

6617629, Sep 9, 2003

Filed:

Jun 26, 2002

Appl. No.:

10/042727

Inventors:

John J. Drab - Santa Barbara CA
David A. Robinson - Redondo Beach CA

Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

H01L 2976

US Classification:

257295, 257298

Abstract:

An electrically writeable, optically readable, ferroelectric memory cell for nonvolatilely storing a single bit. The memory cell has an optically polarizeable translucent ferroelectric layer located between first and second translucent metal layers. The metal layers are used to electrically write an optical polarization state into the translucent ferroelectric layer. A translucent insulator layer, wire grid polarizer, a second translucent insulator layer and light sensing diode region are, in turn, attached to the second translucent metal layer. A polarized light beam, from a light source, is shone onto the first translucent metal layer, in order to optically read out the optical polarization state of the translucent ferroelectric layer of the memory cell. Alternately, two such memory cells can be used together in order to store a single bit.

US Patent:

6803794, Oct 12, 2004

Filed:

Feb 26, 2003

Appl. No.:

10/375563

Inventors:

Mark V. Martin - Redondo Beach CA
John J. Drab - Santa Barbara CA

Assignee:

Raytheon Company - Waltham MA

International Classification:

G01R 1900

US Classification:

327 52, 327 54, 330258

Abstract:

A differential capacitance sense amplifier capable of measuring a small difference-signal capacitance in the presence of circuit mismatches and large unequal interconnect capacitances. The sense amplifier includes three sections: a common-mode section applies a âreadâ voltage to two capacitors in a manner that rejects unequal interconnect capacitance, a difference-mode section generates a signal proportional to the capacitance difference between the two capacitors, and an offset-canceling section compensates for circuit mismatches in the difference-mode section. The amplifier can be adapted for use as a sense amplifier for a ferroelectric differential capacitance memory unit.

US Patent:

6984745, Jan 10, 2006

Filed:

Feb 2, 2004

Appl. No.:

10/771066

Inventors:

Thomas K. Dougherty - Playa Del Rey CA, US
John J. Drab - Santa Barbara CA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

C07F 3/00
C07F 7/00
C04B 35/49
B05D 5/12
C09K 3/00

US Classification:

556 55, 556105, 501134, 4271263, 423608, 423618, 25218311

Abstract:

The synthesis, processing and test of improved lead zirconate titanate (PZT) precursor materials useful for making bulk, thick films and thin films of PZT are provided. PZT is an oxide ceramic extensively used for its piezoelectric properties. A variety of devices made from piezoelectric PZT are known. A soluble spin-on precursor is provided that is compatible with and soluble in non-toxic and environmentally benign solvents (including water), has high stability and long shelf life, and provides high quality PZT films.

US Patent:

7273942, Sep 25, 2007

Filed:

Nov 24, 2004

Appl. No.:

10/996290

Inventors:

T. Kirk Dougherty - Playa del Rey CA, US
John J. Drab - Santa Barbara CA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

C07F 5/00
C07C 231/00

US Classification:

556 1, 564138

Abstract:

A water-stable and water-soluble ceramic precursor is provided, containing at least one Group III element. Also, a metal acid salt complex is provided comprising (1) bismuth, lanthanum, and titanium, and (2) a polyether acid. In addition, methods are provided for preparing the Group III metal acid salt complex and the Bi, La, Ti acid salt complex comprising a bismuth polyether acid salt complex, a lanthanum polyether acid salt complex, and a titanium polyether acid salt complex. Finally, devices that include lanthanum-doped bismuth titanate as the active component are provided, as well as a water-stable and water-soluble gallium polyether acid complex.

US Patent:

7335552, Feb 26, 2008

Filed:

May 15, 2002

Appl. No.:

10/147093

Inventors:

John J. Drab - Santa Barbara CA, US
Thomas K. Dougherty - Playa del Rey CA, US
Kathleen A. Kehle - Santa Barbara CA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 21/8242

US Classification:

438240, 438253, 438E21648

Abstract:

A method of forming a conductor on a substrate including steps of depositing tantalum on a glass layer of the substrate; oxidizing the tantalum; and depositing a noble metal on the oxidized tantalum to form the conductor. The method can be used to form a ferroelectric capacitor or other thin film ferroelectric device. The device can include a substrate comprising a glass layer; and an electrode connected to the glass layer. The electrode comprising can include a noble metal connected to the glass layer by an adhesion layer comprising TaO.

US Patent:

7545625, Jun 9, 2009

Filed:

Dec 20, 2007

Appl. No.:

12/004178

Inventors:

John J. Drab - Santa Barbara CA, US
Thomas K. Dougherty - Playa del Rey CA, US
Kathleen A. Kehle - Santa Barbara CA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01G 4/06

US Classification:

361313, 361311, 361312, 3613012, 361303, 361305

Abstract:

A method of forming a conductor on a substrate including steps of depositing tantalum on a glass layer of the substrate; oxidizing the tantalum; and depositing a noble metal on the oxidized tantalum to form the conductor. The method can be used to form a ferroelectric capacitor or other thin film ferroelectric device. The device can include a substrate comprising a glass layer; and an electrode connected to the glass layer. The electrode comprising can include a noble metal connected to the glass layer by an adhesion layer comprising TaO.

US Patent:

7635761, Dec 22, 2009

Filed:

Aug 17, 2007

Appl. No.:

11/893966

Inventors:

T. Kirk Dougherty - Playa del Rey CA, US
John J. Drab - Santa Barbara CA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

C07F 5/00
C07F 5/06

US Classification:

534 16, 556 1, 556181, 556183

Abstract:

A water-stable and water-soluble ceramic precursor is provided, containing at least one Group III element. Also, a metal acid salt complex is provided comprising (1) bismuth, lanthanum, and titanium, and (2) a polyether acid. In addition, methods are provided for preparing the Group III metal acid salt complex and the Bi, La, Ti acid salt complex comprising a bismuth polyether acid salt complex, a lanthanum polyether acid salt complex, and a titanium polyether acid salt complex. Finally, devices that include lanthanum-doped bismuth titanate as the active component are provided, as well as a water-stable and water-soluble gallium polyether acid complex.

US Patent:

7675066, Mar 9, 2010

Filed:

Oct 7, 2005

Appl. No.:

11/246418

Inventors:

Thomas K. Dougherty - Playa del Ray CA, US
Tricia Veeder - Santa Barbara CA, US
Gregory Tracy - Buellton CA, US
Stephen A. Gabelich - San Pedro CA, US
John J. Drab - Santa Barbara CA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H01L 29/12

US Classification:

257 71, 257E21665

Abstract:

An erase-on-demand memory cell () includes a memory layer and a heating layer that can heat memory layer to at least an erase-effective temperature, to erase its data contents. Memory chips () and electronic systems include cells (). Electronic systems () include logic circuitry to issue a signal to initiate heating. Electronic systems () include memory chips () with one or more erase-on-demand memory cells () that include a memory layer. One or more reservoirs store chemicals. One or more valves retain the chemicals, and respond to a signal to open, reacting the chemicals and/or exposing memory layers to the chemicals. A method of erasing data contents of memory cells includes determining existence of an erase demand scenario, generating a signal in response to the erase demand scenario, and actuating erasure of the memory cells upon issue of the signal.