John F Eger

US Patent:

20130264669, Oct 10, 2013

Filed:

Apr 10, 2012

Appl. No.:

13/442957

Inventors:

Handong Li - Pittsburgh PA, US
Michael Prokesch - Gibsonia PA, US
John Francis Eger - Bentleyville PA, US

Assignee:

Endicott Interconnect Technologies, Inc. - Endicott NY

International Classification:

H01L 27/14
H01L 31/18

US Classification:

257431, 438 68, 257E31001, 257E27122

Abstract:

A method of making a semiconductor radiation detector wherein the metal layers which serve as the cathode and anode electrodes are recessed from the designated prospective dice lines which define the total upper and lower surface areas for each detector such that the dicing blade will not directly engage the metal during dicing and therefore prevent metal from intruding upon (smearing) the vertical side walls of the detector substrate.

US Patent:

20140203392, Jul 24, 2014

Filed:

Mar 24, 2014

Appl. No.:

14/223114

Inventors:

- Saxonburg PA, US
Michael Prokesch - Gibsonia PA, US
John F. Eger - Bentleyville PA, US

International Classification:

H01L 31/0224

US Classification:

257459

Abstract:

A semiconductor radiation detector having a semiconductor substrate and first and second metal layers. The semiconductor substrate has substantially planar upper and lower opposing surfaces which have respective first and second surface areas. The first and second surface areas are defined by prospective dice lines. The first metal layer is on the substantially planar upper surface such that the first metal layer will have a surface area less than the first surface area of the substantially planar upper surface as defined by spaces on the substantially planar upper surface between the first metal layer and the prospective dice lines which define the first surface area. The second metal layer is on the substantially planar lower opposing surface.