John D Hallock

US Patent:

6524936, Feb 25, 2003

Filed:

Dec 22, 2000

Appl. No.:

09/742721

Inventors:

John Scott Hallock - Potomac MD
Alan Frederick Becknell - Ellicott City MD
Palani Sakthivel - Gaithersburg MD

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01L 21425

US Classification:

438531, 156345, 156656

Abstract:

A process for stripping a photoresist layer after exposure to an ion implantation process. The process includes subjecting a substrate having the ion implanted photoresist layer thereon to a UV radiation exposure and subsequently removing the ion implanted photoresist by conventional stripping processes.

US Patent:

6582891, Jun 24, 2003

Filed:

Nov 14, 2000

Appl. No.:

09/712443

Inventors:

John S. Hallock - Potomac MD
Robert D. Mohondro - Sykesville MD

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

G03C 500

US Classification:

430330, 430317, 430322, 430313, 430315, 430328, 430311, 427336, 427335, 427337

Abstract:

A process for reducing roughness from a surface of a patterned photoresist. The process includes exposing a substrate having the patterned photoresist thereon to a vapor, wherein the vapor penetrates into and/or reacts with the surface of the photoresist. The substrate having the patterned photoresist thereon is then heated to a temperature and for a time sufficient to cause the surface of the photoresist to flow and/or react with the vapor wherein the surface roughness decreases. Optionally, the substrate is exposed to radiation during the process to increase the etch resistance of the photoresist and/or facilitate the reaction of the vapor with the surface of the photoresist.

US Patent:

6709807, Mar 23, 2004

Filed:

Oct 9, 2002

Appl. No.:

10/267757

Inventors:

John S. Hallock - Potomac MD
Robert D. Mohondro - Sykesville MD

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

G03C 500

US Classification:

430322, 430311, 430328, 430330, 430331, 430313, 4302701, 430967, 430942

Abstract:

A process for reducing roughness from a surface of a patterned photoresist. The process includes exposing a substrate having the patterned photoresist thereon to a vapor, wherein the vapor penetrates into and/or reacts with the surface of the photoresist. The substrate having the patterned photoresist thereon is then heated to a temperature and for a time sufficient to cause the surface of the photoresist to flow and/or react with the vapor wherein the surface roughness decreases. Optionally, the substrate is exposed to radiation during the process to increase the etch resistance of the photoresist and/or facilitate the reaction of the vapor with the surface of the photoresist.

US Patent:

20040099283, May 27, 2004

Filed:

Nov 26, 2002

Appl. No.:

10/065861

Inventors:

Carlo Waldfried - Falls Church VA, US
John Hallock - Potomac MD, US
Ivan Berry - Ellicott City MD, US
Ari Margolis - Hollywood FL, US
Orlando Escorcia - Falls Church VA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

C25F001/00

US Classification:

134/001200

Abstract:

A method for drying and removing contaminants from a low-k dielectric film of an integrated circuit wafer, the method comprising exposing the low k dielectric layer to photons; and simultaneously with, prior to, or subsequent to the photon exposure, exposing the substrate to a process effective to remove the contaminants without causing degradation of the low k dielectric layer, wherein the process is selected from the group consisting of a heat process, a vacuum process, an oxygen free plasma process, and combinations thereof.