John N Leblanc

US Patent:

20040114869, Jun 17, 2004

Filed:

Sep 19, 2003

Appl. No.:

10/666914

Inventors:

Eugene Fike - Amesbury MA, US
John Fijol - Shrewsbury MA, US
Philip Keating - Salem MA, US
Donald Gilbody - Waltham MA, US
John LeBlanc - North Andover MA, US
Stuart Jacobson - Lexington MA, US
Michael Frish - Andover MA, US
Carl Bozler - Waltham MA, US
Craig Keast - Groton MA, US
Michael Fritze - Acton MA, US
Jeffery Knecht - Brookline NH, US

International Classification:

G02B006/26

US Classification:

385/043000, 385/028000

Abstract:

A mode converter including a silicon waveguide core deposited over a first silicon dioxide cladding layer. The silicon waveguide core is formed such that a first end of the silicon waveguide core has a larger cross-sectional area than a second end of the silicon waveguide core. The silicon waveguide core may include a vertical taper and/or a lateral taper.

US Patent:

20100127407, May 27, 2010

Filed:

Nov 25, 2008

Appl. No.:

12/313900

Inventors:

John LeBlanc - North Andover MA, US
Brad Gaynor - Newton MA, US
David Hagerstrom - Amherst NH, US
Caroline Bjune - Andover MA, US

International Classification:

H01L 23/52
H01L 23/48
H01L 21/00
H01L 23/482
H01L 23/495
H01L 23/522
H01L 21/70

US Classification:

257777, 257786, 438109, 438118, 257E25029, 257E23011, 257E23012, 257E23052, 257E23142, 257E21532

Abstract:

A two-sided substrateless multichip module including at least one die layer having at least one die. At least one bottomside interconnect layer is coupled to a bottom surface of the at least one die. At least one topside interconnect layer is coupled to a top surface of the at least one die. One or more embedded electrical connections is configured to provide an electrical interconnection between the at least one bottomside interconnect layer and the at least one die and/or the at least bottomside interconnect layer and the at least one topside interconnect layer and/or the at least one topside interconnect layer and the at least one die, wherein the at least one bottomside interconnect layer includes one or more electrical contacts on a bottom surface of the multichip module and the at least topside interconnect layer includes one or more electrical contacts on a top surface of the multichip module.

US Patent:

20120287420, Nov 15, 2012

Filed:

Mar 29, 2012

Appl. No.:

13/434313

Inventors:

Bryan McLaughlin - Cambridge MA, US
John LeBlanc - North Andover MA, US

International Classification:

G01N 21/00

US Classification:

356 72

Abstract:

In various embodiments, a probe includes at least one shank, optical components disposed within the shank for transmitting light into a sample and collecting light from the sample, and electrical components disposed within the shank for recording an electrical signal from the sample. In certain embodiments, a method includes collecting light from the sample using a first shank of the probe, recording an electrical signal from the sample using a second shank of the probe, and analyzing the collected light and the electrical signal.

US Patent:

54903335, Feb 13, 1996

Filed:

Feb 1, 1994

Appl. No.:

8/191270

Inventors:

Russell Nelson - Peabody MA
John LeBlanc - Natick MA

International Classification:

G01B 348

US Classification:

33199R

Abstract:

A device to measure round objects, especially threaded objects is shown where three cam surfaces located on the interior of an annular ring are contacted by rollers which are advanced or retracted as a cam surface is traversed. The traverse of the cam surface allows change in diameter formed by the rollers and by locking the cam position, a fixed gauge is formed. The rollers directly contact the part to be measured. As applied to thread measurement, the three point gauge uses annular rollers to measure properties of thread fit and use when the rollers have the threads slightly offset from each other to make a pitch test set. The device allows a single gauge to handle at least 12 normal go and no-go gauging functions with just change of rollers for various fit and pitch classes. The gauge also is settable at special sizes near a standard size due to a range of adjustment.

US Patent:

20180292470, Oct 11, 2018

Filed:

Apr 3, 2018

Appl. No.:

15/944234

Inventors:

- Cambridge MA, US
Stephanie Lynne Golmon - Arlington MA, US
Paul A. Ward - Dedham MA, US
William D. Sawyer - Littleton MA, US
Marc S. Weinberg - Needham MA, US
John J. LeBlanc - North Andover MA, US
Louis Kratchman - Quincy MA, US
Daniel Freeman - Reading MA, US
Amy Duwel - Cambridge MA, US
Max Lindsay Turnquist - Somerville MA, US
William A. Lenk - Cambridge MA, US

International Classification:

G01R 33/00
G01R 1/04
A61B 5/04
G01R 33/12

Abstract:

Aspects are generally directed to a compact and low-noise magnetic field detector, methods of operation, and methods of production thereof. In one example, a magnetic field detector includes a proof mass, a magnetic dipole source coupled to the proof mass, and a substrate having a substrate offset space defined therein, the proof mass being suspended above the substrate offset space. The magnetic field detector further includes a sense electrode disposed on the substrate within the substrate offset space and positioned proximate the proof mass, the sense electrode being configured to measure a change in capacitance relative to the proof mass from movement of the proof mass in response to a received magnetic field at the magnetic dipole source. The magnetic field detector includes a control circuit coupled to the sense electrode and configured to determine a characteristic of the magnetic field based on the measured change in capacitance.

US Patent:

20180284175, Oct 4, 2018

Filed:

Apr 3, 2018

Appl. No.:

15/944106

Inventors:

- Cambridge MA, US
Stephanie Lynne Golmon - Arlington MA, US
Paul A. Ward - Dedham MA, US
William D. Sawyer - Littleton MA, US
Marc S. Weinberg - Needham MA, US
John J. LeBlanc - North Andover MA, US
Louis Kratchman - Quincy MA, US
Daniel Freeman - Reading MA, US
Amy Duwel - Cambridge MA, US
Max Lindsay Turnquist - Somerville MA, US
William A. Lenk - Cambridge MA, US

International Classification:

G01R 29/12
G01R 1/04
A61B 5/04
G01R 29/08
G01R 27/26
G01R 33/12

Abstract:

Aspects are generally directed to a compact and low-noise electric field detector, methods of operation, and methods of production thereof. In one example, an electric field detector includes a proof mass, a source of concentrated charge coupled to the proof mass, and a substrate having a substrate offset space defined therein, the proof mass being suspended above the substrate offset space. The electric field detector further includes a sense electrode disposed on the substrate within the substrate offset space and proximate the proof mass, the sense electrode being configured to measure a change in capacitance relative to the proof mass from movement of the proof mass in response to a received electric field at the source of concentrated charge. The electric field detector includes a control circuit coupled to the sense electrode and configured to determine a characteristic of the electric field based on the measured change in capacitance.

US Patent:

20180133506, May 17, 2018

Filed:

Nov 13, 2017

Appl. No.:

15/811429

Inventors:

- Cambridge MA, US
Joseph J. Register - Cambridge MA, US
Parshant Kumar - Cambridge MA, US
Carlos A. Segura - Cambridge MA, US
Charles A. Lissandrello - Cambridge MA, US
John J. LeBlanc - Cambridge MA, US

International Classification:

A61N 5/06
A61B 5/00

Abstract:

This disclosure provides a device that can include a first compliant optrode. The first compliant optrode can include a stack of flexible waveguide materials providing a first optical interface and configured to be introduced into a tissue sample. The stack of flexible waveguide materials can have a thickness of less than about 100 microns. The first compliant optrode can be substantially linear and can be configured to bend at a turn radius of less than about 300 microns.

US Patent:

20180136389, May 17, 2018

Filed:

Nov 13, 2017

Appl. No.:

15/811203

Inventors:

- Cambridge MA, US
Joseph J. Register - Cambridge MA, US
Parshant Kumar - Cambridge MA, US
Carlos A. Segura - Cambridge MA, US
Charles A. Lissandrello - Cambridge MA, US
John J. LeBlanc - Cambridge MA, US

International Classification:

G02B 6/02
G02B 1/04
G02B 6/26
B05D 1/00
B05D 3/10
B05D 3/12
A61N 5/06

Abstract:

The material stack of the present disclosure can be used for fabricating optical waveguides that are thin and flexible, and that can bend light around small turns. The stack of materials can include a polymer core and a cladding, which together can create a large difference in refractive index. As a result, light can remain within the core even when bent around radii where standard glass fibers could fail.