John E Mattson

US Patent:

D493232, Jul 20, 2004

Filed:

Sep 9, 2002

Appl. No.:

29/167084

Inventors:

Jacob N. Wohlstadter - Potomac MD
Eli N. Glezer - Chevy Chase MD
Charles Clinton - Clarksburg MD
Brian A. Self - Germantown MD
John Mattson - Mount Airy MD
Lance Hussey - Simi Valley CA
Nasahn Sheppard - Woodland Hills CA
Tim Nugent - Venice CA
Chris Glupker - Van Nuys CA
Hirotomi Teranishi - Palo Alto CA
Ravi Sawhney - Calabasas CA

Assignee:

Meso Scale Technologies, LLC. - Gaithersburg MD

International Classification:

2401

US Classification:

D24216, D24232

US Patent:

6780655, Aug 24, 2004

Filed:

Jul 31, 2003

Appl. No.:

10/632579

Inventors:

John Mattson - Waldorf MD

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 2100

US Classification:

438 3, 438238, 438239, 438257, 257295, 257296, 257421, 257422, 257903

Abstract:

The invention includes a method of forming a magnetoresistive memory device. A trench is formed in an insulative material, and the trench is partially filled with a first magnetic material to narrow the trench. The narrowed trench is at least partially filled with a conductive material. A second magnetic material is formed over the conductive material. A non-magnetic layer is formed over the second magnetic material. A third magnetic material is formed over the non-magnetic layer. The conductive material and the first and second magnetic materials are incorporated into a sense portion of the magnetoresistive memory device. The third magnetic material is incorporated into a reference portion of the magnetoresistive memory device.

US Patent:

6806523, Oct 19, 2004

Filed:

Jul 15, 2002

Appl. No.:

10/196484

Inventors:

John Mattson - Waldorf MD

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 31119

US Classification:

257295, 257421, 257422, 438 3, 438 48, 438 50, 365158

Abstract:

The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over at least a portion of the first magnetic layer and separated from the conductive core by at least the first magnetic layer. A second magnetic layer is over the non-magnetic material, and separated from the first magnetic layer by at least the non-magnetic material. The invention also includes methods of forming magnetoresistive memory devices.

US Patent:

6958246, Oct 25, 2005

Filed:

Sep 9, 2004

Appl. No.:

10/938667

Inventors:

John Mattson - Waldorf MD, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L021/00

US Classification:

438 3, 438 48, 438 50, 438238, 365158

Abstract:

The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over at least a portion of the first magnetic layer and separated from the conductive core by at least the first magnetic layer. A second magnetic layer is over the non-magnetic material, and separated from the first magnetic layer by at least the non-magnetic material. The invention also includes methods of forming magnetoresistive memory devices.

US Patent:

6982450, Jan 3, 2006

Filed:

Sep 9, 2004

Appl. No.:

10/939248

Inventors:

John Mattson - Waldorf MD, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 31/119

US Classification:

257295, 257421, 257422, 438 3, 438 48, 365158

Abstract:

The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over at least a portion of the first magnetic layer and separated from the conductive core by at least the first magnetic layer. A second magnetic layer is over the non-magnetic material, and separated from the first magnetic layer by at least the non-magnetic material. The invention also includes methods of forming magnetoresistive memory devices.

US Patent:

D516221, Feb 28, 2006

Filed:

Sep 9, 2002

Appl. No.:

29/167119

Inventors:

Jacob N. Wohlstadter - Potomac MD, US
Eli N. Glezer - Chevy Chase MD, US
Charles Clinton - Clarksburg MD, US
Brian A. Self - Germantown MD, US
John Mattson - Mount Airy MD, US
Lance Hussey - Simi Valley CA, US
Nasahn Sheppard - Woodland Hills CA, US
Hirotomi Teranishi - Palo Alto CA, US
Ravi Sawhney - Calabasas CA, US

Assignee:

Meso Scale Technologies, LLC. - Gaithersburg MD

International Classification:

2401

US Classification:

D24216, D24232

US Patent:

58770429, Mar 2, 1999

Filed:

Aug 28, 1996

Appl. No.:

8/697712

Inventors:

John E. Mattson - Palatine IL
William G. Skoda - Oak Park IL
Piyush Chaudhari - Palatine IL
Joyce K. Yamamoto - Albuquerque NM
Ross A. Miesem - Albuquerque NM

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 2144

US Classification:

438123

Abstract:

A method of producing a glass/metal package where a glass portion of the package is built up around a provided leadframe (10) using applications of solderable and glass pastes (20) which are subsequently fired (30). The glass paste and leadframe are chosen to have similar coefficients of expansion and the leadframe is pretreated to degasify and control oxidation of the metal to promote glass adhesion to the leadframe and prevent microcracking at a glass/metal interface. A seal ring is applied to the glass paste (40) and a lid is attached to the seal ring (50). The package is used to provide an sealed inert internal environment for sensitive electronic components such as a piezoelectric element. The package may be configured for leaded or surface mounting (60).

US Patent:

58567283, Jan 5, 1999

Filed:

Feb 28, 1997

Appl. No.:

8/810308

Inventors:

Charles L. Zimnicki - Bartlett IL
John Mattson - Palatine IL

Assignee:

Motorola Inc. - Schaumburg IL

International Classification:

H05B 3702

US Classification:

315209PZ

Abstract:

A power transformer circuit (100) includes a capacitor (120) and a resonator (140). The resonator (140) is coupled in series with the capacitor (120) and is operable to provide a substantially inductive impedance between its terminals (142,144). Resonator (140) is preferably implemented as a piezoelectric lithium niobate resonator that is operated in a thickness-shear mode. In a preferred embodiment, power transformer circuit (100) is employed as a series resonant output circuit in an electronic ballast (500) for powering at least one gas discharge lamp (30).