John F Ott

US Patent:

6475072, Nov 5, 2002

Filed:

Sep 29, 2000

Appl. No.:

09/675841

Inventors:

Donald F. Canaperi - Bridgewater CT
Jack Oon Chu - Manhasset Hills NY
Guy M. Cohen - Mohegan Lake NY
Lijuan Huang - Mountain View CA
John Albrecht Ott - Greenwood Lake NY
Michael F. Lofaro - Marlboro NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B24B 100

US Classification:

451 65, 451285

Abstract:

A method and apparatus is described incorporating a semiconductor substrate, a CMP tool, a brush cleaning tool, and a chemical wafer cleaning tool. The CMP is performed with a down force of 1 psi, a backside air pressure of 0. 5 psi, a platen speed of 50 rpm, a crarrier speed of 30 rpm and a slurry flow rate of 140 milliliters per minute.

US Patent:

6524935, Feb 25, 2003

Filed:

Sep 29, 2000

Appl. No.:

09/675840

Inventors:

Donald F. Canaperi - Bridgewater CT
Jack Oon Chu - Manhasset Hills NY
Christopher P. DEmic - Ossining NY
Lijuan Huang - Tarrytown NY
John Albrecht Ott - Greenwood Lake NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2136

US Classification:

438478, 438458, 438507, 438479

Abstract:

A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) is described incorporating growing epitaxial Si Ge layers on a semiconductor substrate, implanting hydrogen into a selected Si Ge layer to form a hydrogen-rich defective layer, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and separating two substrates at the hydrogen-rich defective layer. The separated substrates may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si Ge , and strained Si Ge depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si Ge C.