John D Peck

US Patent:

7524765, Apr 28, 2009

Filed:

Nov 2, 2005

Appl. No.:

11/266131

Inventors:

Juan E. Dominquez - Hillsboro OR, US
Adrien R. Lavoie - Beaverton OR, US
Harsono S. Simka - Saratoga CA, US
John Plombon - Portland OR, US
David M. Thompson - East Amherst NY, US
John D. Peck - West Seneca NY, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 21/44

US Classification:

438681, 257E21171

Abstract:

A method comprising introducing an organometallic precursor according to a first set of conditions in the presence of a substrate; introducing the organometallic precursor according to a different second set of conditions in the presence of the substrate; and forming a layer comprising a moiety of the organometallic precursor on the substrate according to an atomic layer deposition process. A system comprising a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor comprising a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures formed in a plurality of dielectric layers formed on the substrate and each of the plurality of interconnect structures separated from the plurality of dielectric layers by a barrier layer formed according to an atomic layer deposition process.

US Patent:

7550385, Jun 23, 2009

Filed:

Sep 30, 2005

Appl. No.:

11/240005

Inventors:

Adrien R. Lavoie - St. Helens OR, US
Valery M. Dubin - Portland OR, US
Juan E. Dominguez - Hillsboro OR, US
Kevin P. O'Brien - Portland OR, US
Steven W. Johnston - Portland OR, US
John D. Peck - West Seneca NY, US
David M. Thompson - East Amherst NY, US
David W. Peters - Tonawanda NY, US

Assignee:

Intel Corporation - Santaclara CA

International Classification:

H01L 21/44

US Classification:

438681, 438627, 438648, 438656, 257E21168, 42724917

Abstract:

A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.

US Patent:

7927658, Apr 19, 2011

Filed:

Oct 16, 2003

Appl. No.:

10/685785

Inventors:

David M. Thompson - Williamsville NY, US
Cynthia A. Hoover - Grand NY, US
John D. Peck - West Seneca NY, US
Michael M. Litwin - Cheektowaga NY, US

Assignee:

Praxair Technology, Inc. - Danbury CT

International Classification:

C23C 16/06

US Classification:

4272481

Abstract:

Disclosed herein is a process for producing a film, coating or powder employing a metallocene or metallocene-like precursor having the general formula CpMCp′, where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl or cyclopentadienyl-like, e. g. , indenyl, moiety that includes at least one substituent group D, where Dis X; CHX; CHX(C═O)CHX; CHXOCHX; CHX(C═O)OCHX; or CHXO(C═O)CHX; and Cp′ is a second substituted cyclopentadienyl or cyclopentadienyl-like, e. g. , indenyl, moiety that includes at least one substituent group D′, where D1′ is X; CHX; CHX(C═O)CHX; CHXOCHX; CHX(C═O)OCHX; or CHXO(C═O)CHX. Dand D′ are different from one another. X is a halogen atom or NO; a1 is an integer between 1 to 8; b1 is an integer between 0 and 2(a1)+1−c1; c1 is an integer between 0 and 2(a1)+1−b1; b1+c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2(a2)+1−c2; and c2 is an integer between 0 and 2(a2)+1−b2. The process can be used in manufacturing or processing electronic devices.

US Patent:

7956207, Jun 7, 2011

Filed:

Sep 7, 2007

Appl. No.:

11/899784

Inventors:

Scott Houston Meiere - Williamsville NY, US
John D. Peck - West Seneca NY, US
Ronald F. Spohn - Getzville NY, US
David M. Thompson - East Amherst NY, US

Assignee:

Praxair Technology, Inc. - Danbury CT

International Classification:

C07F 7/00
C07F 11/00
C23C 16/00

US Classification:

556 51, 4272481, 534 15, 556 57

Abstract:

This invention relates to organometallic compounds represented by the formula (L)M(L)wherein M is a metal or metalloid, Land Lare different and are each a hydrocarbon group or a heteroatom-containing group; is a value of at least 1; is a value of at least 1; + is equal to the oxidation state of M; and wherein (i) Lhas a steric bulk sufficiently large such that, due to steric hinderance, cannot be a value equal to the oxidation state of M, (ii) Lhas a steric bulk sufficiently small such that, due to lack of steric hinderance, can be a value equal to the oxidation state of M only in the event that is not a value of at least 1, and (iii) Land Lhave a steric bulk sufficient to maintain a heteroleptic structure in which + is equal to the oxidation state of M; a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.

US Patent:

20080206445, Aug 28, 2008

Filed:

Feb 22, 2007

Appl. No.:

11/709435

Inventors:

John Peck - West Seneca NY, US
Michael Mark Litwin - Cheektowaga NY, US

International Classification:

C23C 16/00

US Classification:

427 58, 118726, 203 99, 42725526

Abstract:

This invention relates to a separation process comprising (i) introducing a vapor phase mixture into a condensing apparatus, said vapor phase mixture comprising at least one desirable component and at least one undesirable component; (ii) controlling the temperature in the condensing apparatus utilizing a heat-transfer gas; and (iii) operating the condensing apparatus at a temperature and a pressure sufficient to selectively condense at least a portion of said vapor phase mixture and thereby yield a recovered content containing said at least one desirable component. The separation process is useful in semiconductor applications such as recovery of unreacted organometallic compound precursors in chemical vapor deposition or atomic layer deposition processes.

US Patent:

20090255466, Oct 15, 2009

Filed:

Mar 19, 2009

Appl. No.:

12/407376

Inventors:

John D. Peck - West Seneca NY, US

International Classification:

C23C 16/52
C23C 16/455

US Classification:

118712, 118733

Abstract:

This invention relates to a vapor or liquid phase reagent dispensing apparatus that may be used for dispensing vapor or liquid phase reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices. This invention reduces the number of container designs required to support different applications. A standard two port container without a tube can be converted to a container capable of being used in applications which require a tube (i.e., bubbler tube for gas delivery or a dip tube for liquid delivery), by inserting a gasket/tube adapter between one of the ports and the corresponding valve in accordance with this invention.

US Patent:

20090258143, Oct 15, 2009

Filed:

Mar 19, 2009

Appl. No.:

12/407322

Inventors:

John D. Peck - West Seneca NY, US

International Classification:

C23C 16/00
G05D 7/00

US Classification:

42725528, 137 2

Abstract:

This invention relates to a vapor or liquid phase reagent dispensing apparatus that may be used for dispensing vapor or liquid phase reagents such as precursors for deposition of materials in the manufacture of semiconductor materials and devices. This invention reduces the number of container designs required to support different applications. A standard two port container without a tube can be converted to a container capable of being used in applications which require a tube (i.e., bubbler tube for gas delivery or a dip tube for liquid delivery), by inserting a gasket/tube adapter between one of the ports and the corresponding valve in accordance with this invention.

US Patent:

20100227476, Sep 9, 2010

Filed:

Mar 1, 2010

Appl. No.:

12/714579

Inventors:

John D. Peck - West Seneca NY, US

International Classification:

H01L 21/3205

US Classification:

438680, 257E21295

Abstract:

This invention relates to method of forming a thin film on a substrate in a reaction chamber by an atomic layer deposition process comprising a plurality of individual cycles. The plurality of individual cycles comprise at least two groupings of individual cycles. The individual cycles comprise (i) introducing a gaseous metal containing precursor into the reaction chamber and exposing the substrate to the gaseous metal containing precursor, wherein at least a portion of the metal containing precursor is chemisorbed onto the surface of the substrate to form a monolayer thereon, (ii) stopping introduction of the metal containing precursor and purging the volume of the reaction chamber; (iii) introducing a gaseous oxygen source compound into the reaction chamber and exposing the monolayer to the gaseous oxygen source compound, wherein at least a portion of the oxygen source compound chemically reacts with the monolayer; and (iv) stopping introduction of the oxygen source compound and purging the volume of the reaction chamber. The method involves repeating the individual cycles until a thin film of desired thickness is obtained. The method also involves carrying out at least two groupings of individual cycles at different process conditions. The methods are useful for producing a thin film on a semiconductor substrate, particularly metal containing thin films for electrode applications in microelectronics.