John S Schuler

US Patent:

7768044, Aug 3, 2010

Filed:

Jul 30, 2004

Appl. No.:

10/903938

Inventors:

Canzhong He - Emmaus PA, US
John A. Schuler - Blaine MN, US
John M. Sharpe - Allentown PA, US
Hong-Ha Vuong - Allentown PA, US

Assignee:

Agere Systems Inc. - Allentown PA

International Classification:

H01L 29/76
H01L 29/94
H01L 21/20
H01L 21/336
H01L 21/8234

US Classification:

257288, 257401, 257296, 257298, 438396, 438197

Abstract:

An on-chip capacitive device comprises a semiconductor substrate, a MOS capacitor formed on the semiconductor substrate, and a metal interconnect capacitor formed at least in part in a region above the MOS capacitor. The MOS capacitor and the metal interconnect capacitor are connected in parallel to form a single capacitive device. The capacitance densities of the MOS capacitor and the metal interconnect capacitor are, thereby, combined. Advantageously, significant capacitance density gains can be achieved without additional processing steps.