John B Straight

US Patent:

50179993, May 21, 1991

Filed:

Jun 30, 1989

Appl. No.:

7/374960

Inventors:

Roger L. Roisen - Shorewood MN
Curtis H. Rahn - Plymouth MN
John B. Straight - Crystal MN
Michael S. Liu - Bloomington MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

H01L 2712
H01L 2906
H01L 2702

US Classification:

357 49

Abstract:

An isolation structure as well as a method for using and fabricating an isolation structure in an active layer deposited on a substrate the method of fabrication including the steps of forming a buried oxide layer in the active layer adjacent the substrate, forming an isolation trench in the active layer by etching at least up to and optionally into the substrate, forming a dielectric isolation layer on the exposed surfaces of the trench, removing the dielectric isolation layer from the bottom of the trench, and forming an isolation structure by epitaxially growing monocrystalline silicon in the trench.

US Patent:

52348610, Aug 10, 1993

Filed:

Mar 12, 1991

Appl. No.:

7/668013

Inventors:

Roger L. Roisen - Shorewood MN
Curtis H. Rahn - Plymouth MN
John B. Straight - Crystal MN
Michael S. Liu - Bloomington MN

Assignee:

Honeywell Inc. - Minneapolis MN

International Classification:

H01L 2176

US Classification:

437 67

Abstract:

An isolation structure as well as a method for using and fabricating an isolation structure in an active layer deposited on a substrate the method of fabrication including the steps of forming a buried oxide layer in the active layer adjacent the substrate, forming an isolation trench in the active layer by etching at least up to and optionally into the substrate, forming a dielectric isolation layer on the exposed surfaces of the trench, removing the dielectric isolation layer from the bottom of the trench, and forming an isolation structure by epitaxially growing monocrystalline silicon in the trench.