John M Swartz

US Patent:

20020173034, Nov 21, 2002

Filed:

May 21, 2001

Appl. No.:

09/861686

Inventors:

John Swartz - Westerville OH, US

International Classification:

C12N005/00
C12M001/00
C12N005/02

US Classification:

435/325000, 435/283100

Abstract:

An apparatus for use in a swinging bucket centrifuge rotor, the apparatus comprising a pair of sidewalls wherein each sidewall comprises a plurality of longitudinally spaced and laterally disposed partitions; wherein each pair of adjacent partitions defines a slot which is dimensioned to receive a cell culture device. The apparatus comprises a centrifuge bucket or an adaptor for use with a centrifuge bucket. Also provided is a method for harvesting one or more components of a cell culture contained within a cell culture device by centrifuging the cell culture device as supported by the apparatus during centrifugation, and then removing separately the one or more components of the cell culture from the centrifuged cell culture device. Further provided is a method for harvesting anchorage-dependent cells by distending the membrane surface to which the cells adhere in a process of loosening the cells, contacting and mixing the loosened cells with a fluid in forming a cell suspension, and then harvesting the anchorage-dependent cells by removing the cell suspension from the cell culture device.

US Patent:

41632400, Jul 31, 1979

Filed:

Mar 21, 1977

Appl. No.:

5/779346

Inventors:

Philip R. Swinehart - Columbus OH
John M. Swartz - Westerville OH

Assignee:

The Harshaw Chemical Company - Cleveland OH

International Classification:

H01L 2714

US Classification:

357 29

Abstract:

A method is disclosed of controlling and improving the sensitivity of silicon PIN diodes to dosage by fast neutrons. The method includes selecting a silicon mass of high resistivity n or p-type material having a relatively long minority carrier lifetime, in excess of 250 microseconds (. mu. sec) providing n. sup. + and p. sup. + -type junctions, and arranging the mass to obtain a silicon PIN diode dosimeter having a preselected ratio of edge area to volume. A silicon PIN diode personnel dosimeter sensitive to a radiation level of absorbed dose as low as 0. 1 rad has been produced; this dosimeter, in the range from about 0. 1 rad to about 10 rads has a sensitivity of at least 10 mV/rad.