John L Wang

US Patent:

6365945, Apr 2, 2002

Filed:

May 2, 2000

Appl. No.:

09/563024

Inventors:

Michael K. Templeton - Atherton CA
Masaaki Higashitani - Sunnyvale CA
John Jianshi Wang - San Jose CA

Assignee:

Advance Micro Devices, Inc. - Sunnyvale CA

International Classification:

H01L 2976

US Classification:

257395, 257394, 257396, 257397, 257398, 257399, 257400, 257224, 257243

Abstract:

A submicron semiconductor device having a self-aligned channel stop implant region, and a method for fabricating the semiconductor device using a trim and etch is disclosed. The semiconductor device includes a plurality of active regions separated by insulating regions. The method for fabricating the device includes depositing a nitride over a substrate and selectively covering the active regions with a mask, wherein the mask extends beyond boundaries of the active regions to narrow the width of the insulating regions. Thereafter, a channel stop implant is performed to form channel stops. The mask is then trimmed to the boundaries of the active regions after formation of the channel stops, followed by etching the nitride in exposed areas of the mask. Field oxide is then grown in the insulating regions, whereby the field oxide is self-aligned to the channel stops.

US Patent:

6420240, Jul 16, 2002

Filed:

Jul 8, 2000

Appl. No.:

09/611701

Inventors:

Wenge Yang - Fremont CA
John Jianshi Wang - San Jose CA
Hao Fang - Cupertino CA

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

H01L 2176

US Classification:

438424, 438734

Abstract:

In one embodiment, a process for reducing the step height of shallow trench isolation structures includes the acts of (a) forming a hard mask on a semiconductor substrate to define a trench, (b) forming the trench, (c) filling the trench with a dielectric material, (d) planarizing the dielectric material,(e) replacing the hard mask with a resist mask, (f) etching back the dielectric material to reduce its step height, and (g) removing the resist mask. In another embodiment, the hard mask used to define the trench is used during the etch back of the dielectric material. In another embodiment, the hard mask used to define the trench is partially stripped before the dielectric material is planarized to reduce its step height.

US Patent:

6423612, Jul 23, 2002

Filed:

Jun 26, 2000

Appl. No.:

09/604547

Inventors:

Wenge Yang - Fremont CA
John Jianshi Wang - San Jose CA
Fei Wang - San Jose CA

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

H01L 21336

US Classification:

438424, 438289

Abstract:

A shallow trench isolation (STI) region is covered with a nitride layer. The nitride layer, advantageously, fills in gaps in the underlying dielectric layer, such as seams, thereby reducing leakage. The nitride layer may be patterned to form a spacer above the STI region which is used to define an opening in the polysilicon layer that is subsequently deposited. The polysilicon layer is etched back to expose the nitride spacer, which is then etched away in a controlled fashion. Thus, a small opening may be formed in the polysilicon layer. Further, because the polysilicon layer is etched back to the top of the nitride spacer, the polysilicon layer is planarized thereby reducing stringers in subsequent processing.

US Patent:

6545567, Apr 8, 2003

Filed:

Sep 17, 2001

Appl. No.:

09/955563

Inventors:

Shanthi Pavan - Fremont CA
Sudeep Bhoja - San Jose CA
John S. Wang - Sunnyvale CA

Assignee:

Big Bear Networks, Inc. - Milpitas CA

International Classification:

H03H 1500

US Classification:

333166, 333193, 333153, 333165, 333 16

Abstract:

Method and system for a programmable analog tapped delay line filter are disclosed. One embodiment of the present invention is a programmable analog tapped delay line filter comprising an input line, an output line, and one or more gaincells or taps coupled between the input line and the output line. The input and output lines each comprises a cascade of one or more differential delay cells, and each of the one or more gaincells or taps corresponds to a tap weight or coefficient. Furthermore, the input and output lines are terminated in impedances and the filter produces one or more outputs.

US Patent:

6855439, Feb 15, 2005

Filed:

Sep 16, 2003

Appl. No.:

10/662427

Inventors:

Shanghsien Alex Rou - Fremont CA, US
John Wang - Fremont CA, US
Romulo Ata - San Jose CA, US

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

G11B005/66
G11B005/70

US Classification:

428694TS, 428694 ST, 428336, 428900

Abstract:

Oriented longitudinal magnetic recording media on direct texture glass or glass-ceramic substrate with a film structure of one or more Ni-containing layer, a Cr-containing underlayer, a Co-containing magnetic layer and carbon overcoat exhibits are capable of achieving Mrt OR of >1. 5, preferably >1. 85. Such highly oriented glass media shows a significant SNR (>2 dB) and parametric improvement over the counterpart isotropic media with the same film structure on non-textured glass or glass-ceramic substrates.

US Patent:

6929637, Aug 16, 2005

Filed:

Dec 11, 2002

Appl. No.:

10/317667

Inventors:

Hugo X. Gonzalez - Woodinville WA, US
Steven Chase Springmeyer - Bellevue WA, US
Richard O. Shea - Kenmore WA, US
John H. Wang - Sammamish WA, US
Lauri J. DeVore - Seattle WA, US

Assignee:

Spiration, Inc. - Redmond WA

International Classification:

A61K009/22

US Classification:

6048901, 604 11

Abstract:

The present invention includes an intra-bronchial device, system, and method for providing a therapeutic agent to a patient. A device includes a flow control member for placement in an air passageway communicating with a lung portion, and when deployed in the air passageway inhibits a therapeutic agent distal of the control member from moving proximal of the control member, and includes the therapeutic agent associated with the flow control member. The control member may inhibit movement of the therapeutic agent by limiting airflow, and may include a one-way valve limiting exhalation of air from the lung portion. The control member may include a flexible membrane impervious to air flow, or a separator arranged to inhibit the movement of the therapeutic agent. The control member may include at least one anchor, and the anchor may be releasable from the air passageway for removal of the intra-bronchial device.

US Patent:

7099789, Aug 29, 2006

Filed:

Sep 2, 2004

Appl. No.:

10/934121

Inventors:

Franklyn Shihyu Wu - Berkeley CA, US
Jeffrey P. Erhardt - San Jose CA, US
Paul J. Steffan - Elk Grove CA, US
Jerry H. G. Tsiang - Cupertino CA, US
Shivananda S. Shetty - Sunnyvale CA, US
John J. Wang - San Jose CA, US

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

G01R 31/00

US Classification:

702117, 324522, 324765

Abstract:

A method and system of processing tester information of a system under test is provided. Data of a tested characteristic of the system under test is generated. A distribution curve is extracted from the data. A signature of the distribution curve is determined, and a map of the signature on a depiction of the system under test is presented. The distribution curve also can be categorized in a plurality of bins, and bitmaps are generated for the sections in each of the plurality of bins. Systematic signatures are determined from the bitmaps in the block, and the signatures are correlated with the locations on the system under test.

US Patent:

7407720, Aug 5, 2008

Filed:

Mar 31, 2004

Appl. No.:

10/813117

Inventors:

Erol Girt - Berkeley CA, US
Alex Rou - Fremont CA, US
John Wang - Fremont CA, US

Assignee:

Seagate Technology LLC - Scotts Valley CA

International Classification:

G11B 5/66

US Classification:

4288312

Abstract:

A magnetic recording medium having a substrate, an interlayer and a magnetic layer, the interlayer having at least a first intermediary layer, a second intermediary layer and a third intermediary layer, wherein the first intermediary layer or the third intermediary layer is non-magnetic or magnetic and the second intermediary layer has a hexagonal close pack crystal structure and a property of providing RKKY coupling between the first intermediary layer and the third intermediary layer when the first intermediary layer and the second intermediary layer are magnetic layers is disclosed.