Jonathan M Ziebarth from Solana Beach, CA, age 47

Us Patents

Optical Imaging System Having An Illumination Source Between Object And Image
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US Patent:

7504613, Mar 17, 2009
Filed:

Mar 11, 2005
Appl. No.:

11/078648
Inventors:

Evan Thrush - Menlo Park CA, US
Jonathan Ziebarth - Mountain View CA, US
Michael D. McGehee - Palo Alto CA, US
Assignee:

The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA
International Classification:

H01L 27/00
G02B 6/06
US Classification:

2502081, 2502272, 359385, 600407
Abstract:

An optical imaging system having an optical source located between the object being imaged and the sensor is provided. Such positioning of the source enables provision of compact optical imaging systems. In particular, such systems can have image widths significantly larger than the object to sensor separation. The arrangement of source, imaging assembly and sensor is such that an image of the source is not formed at the sensor. Therefore, the effect of this source positioning on the image of the object at the sensor is a reduction of intensity, as opposed to more objectionable imaging artifacts, such as spurious shadows and/or bright spots. Thus compact optical imaging systems having good image quality are provided, which enables high-fidelity imaging of object to sensor for a wide variety of applications.

Nanocrystal Doped Matrixes
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US Patent:

7645397, Jan 12, 2010
Filed:

Jul 24, 2006
Appl. No.:

11/492717
Inventors:

J. Wallace Parce - Palo Alto CA, US
Paul Bernatis - Sunnyvale CA, US
Robert Dubrow - San Carlos CA, US
William P. Freeman - San Mateo CA, US
Joel Gamoras - Vallejo CA, US
Shihai Kan - San Jose CA, US
Andreas Meisel - Redwood City CA, US
Baixin Qian - Sunnyvale CA, US
Jeffery A. Whiteford - Belmont CA, US
Jonathan Ziebarth - Palo Alto CA, US
Assignee:

Nanosys, Inc. - Palo Alto CA
International Classification:

C09K 11/02
US Classification:

25230136, 2523016 S, 2523014 R, 977783
Abstract:

Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.

Nanocrystal Doped Matrixes
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US Patent:

8425803, Apr 23, 2013
Filed:

Nov 9, 2009
Appl. No.:

12/590619
Inventors:

J. Wallace Parce - Palo Alto CA, US
Paul Bernatis - Sunnyvale CA, US
Robert Dubrow - San Carlos CA, US
William P. Freeman - San Mateo CA, US
Joel Gamoras - Vallejo CA, US
Shihai Kan - San Jose CA, US
Andreas Meisel - Redwood City CA, US
Baixin Qian - Cupertino CA, US
Jeffery A. Whiteford - Belmont CA, US
Jonathan Ziebarth - Santa Barbara CA, US
Assignee:

Samsung Electronics Co., Ltd.
International Classification:

C30B 23/00
C30B 25/00
C30B 28/12
C30B 28/14
US Classification:

2523016S, 428403, 428404, 427212, 427215, 977813, 977824
Abstract:

Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.

Nanocrystal Doped Matrixes
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US Patent:

8592037, Nov 26, 2013
Filed:

Oct 20, 2011
Appl. No.:

13/277361
Inventors:

J. Wallace Parce - Palo Alto CA, US
Paul Bernatis - Sunnyvale CA, US
Robert Dubrow - San Carlos CA, US
William P Freeman - San Mateo CA, US
Joel Gamoras - Vallejo CA, US
Shihai Kan - San Jose CA, US
Andreas Meisel - Redwood City CA, US
Baixin Qian - Sunnyvale CA, US
Jeffery A Whiteford - Belmont CA, US
Jonathan Ziebarth - Palo Alto CA, US
Assignee:

Samsung Electronics Co., Ltd.
International Classification:

B32B 9/04
US Classification:

428405, 523212, 523213, 528 15, 528 26, 528 30, 556439, 556405
Abstract:

Compositions containing a nanostructure, preferably a nanocrystal, are provided. The nanostructures have ligands bound to the surface. Such ligands are preferably siloxane containing ligands having at least one —COON group, although ligands having various ═P═O groups are also contemplated. The nanostructures can be embedded into a polymer such as a silicone polymer.

Process And Materials For Making Contained Layers And Devices Made With Same
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US Patent:

8592239, Nov 26, 2013
Filed:

Dec 21, 2009
Appl. No.:

12/643403
Inventors:

Adam Fennimore - Wilmington DE, US
Jonathan M. Ziebarth - Santa Barbara CA, US
Nora Sabina Radu - Landenberg PA, US
Assignee:

E I du Pont de Nemours and Company - Wilmington DE
International Classification:

H01L 21/00
US Classification:

438 38, 257 40, 313503, 313504
Abstract:

There is provided a process for forming a contained second layer over a first layer, including the steps:.

Artificial Synapse Chip Interface For Electronic Prosthetic Retina
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US Patent:

20030032946, Feb 13, 2003
Filed:

Jun 27, 2002
Appl. No.:

10/184210
Inventors:

Harvey Fishman - Menlo Park CA, US
Mark Blumenkranz - Portola Valley CA, US
Stacey Bent - Palo Alto CA, US
David Bloom - Wilson WY, US
Mark Peterman - Stanford CA, US
Jonathan Ziebarth - Mountain View CA, US
Christina Lee - San Francisco CA, US
Theodore Leng - Mountain View CA, US
International Classification:

A61K009/22
C12M001/00
US Classification:

604/890100, 435/289100
Abstract:

The invention provides microfabricated devices and methods for directing the growth of a cell process to form an artificial synapse. The devices are called artificial synapse chips. The artificial synapse comprises a nanofabricated aperture (about -nm in size) that connects the cell process to a chemical or electrical means of neuronal excitation. Such an aperture width mimics the length scales of a natural synapse and thus emphasizes the localized spatial relationship between a neuron and a stimulation source. The invention further provides devices and methods for regenerating a nerve fiber into an electrode. The invention thus provides a regeneration electrode that uses a novel neural interface for stimulation and that uses novel surface methods for directing neuronal growth making possible in vivo connection of the devices to neural circuitry in a retina and other anatomical locations.

Electron Transport Bi-Layers And Devices Made With Such Bi-Layers
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US Patent:

20090101870, Apr 23, 2009
Filed:

Oct 21, 2008
Appl. No.:

12/255242
Inventors:

Shiva Prakash - Santa Barbara CA, US
Jonathan M. Ziebarth - Santa Barbara CA, US
International Classification:

C09K 11/02
C09K 11/06
US Classification:

25230135, 25230116
Abstract:

There are disclosed bi-layer compositions which are useful as electron transport layers. The bi-layers have a first layer containing electron transport material and a second layer containing a fullerene. Also disclosed are organic light emitting diodes including the electron transport bi-layers.

Process For Forming An Electroactive Layer
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US Patent:

20110095308, Apr 28, 2011
Filed:

May 15, 2009
Appl. No.:

12/937569
Inventors:

Reid John Chesterfield - Santa Barbara CA, US
Nugent Truong - Ventura CA, US
Jeffrey A. Merlo - Wilmington DE, US
Adam Fennimore - Wilmington DE, US
Jonathan M. Ziebarth - Santa Barbara CA, US
International Classification:

H01L 33/26
H01L 31/18
H01L 31/0256
US Classification:

257 79, 438 46, 438 93, 257431, 257E33045, 257E33013, 257E31003, 257E31054
Abstract:

There is provided a process for forming a layer of electroactive material having a substantially flat profile. The process includes the steps of providing a workpiece having at least one active area; depositing a liquid composition including the electroactive material onto the workpiece in the active area, to form a wet layer; treating the wet layer on the workpiece at a controlled temperature in the range of −25 to 80 C. and under a vacuum in the range of 10to 1,000 Torr, for a first period of 1-100 minutes, to form a partially dried layer; and heating the partially dried layer to a temperature above 100 C. for a second period of 1-50 minutes to form a dried layer.