Joseph R Lyons

US Patent:

6633050, Oct 14, 2003

Filed:

Aug 15, 2000

Appl. No.:

09/638902

Inventors:

Joseph H. Lyons - Wilton CT

Assignee:

ASML Holding NV. - Veldhoven

International Classification:

G01J 120

US Classification:

250548, 356400, 355 53

Abstract:

A virtual gauging system for use in a lithographic process is described that includes means for gauging a region at a surface of a wafer when the region is located away from an axis of illumination producing wafer surface data, while other portions of the wafer are being illuminated. The system also includes means for converting the wafer surface data into wafer correction data and means for adjusting a separation distance between an exposure lens and the region at the surface of the wafer based on the correction data when the region is located at the axis of illumination. The means for gauging includes at least two wafer surface gauges located on opposite sides of an illumination slot. The means for converting the wafer surface data into wafer correction data includes means for determining a direction of travel of the wafer, and the wafer correction data is based on data produced by one of the two wafer surface gauges located on the side of the illumination slot that corresponds to the direction of travel of the wafer. The means for converting the wafer surface data into wafer correction data includes a finite-impulse-response filter, and the finite-impulse-response filter is triggered by a spatial interrupt and has a width that can be modified in response to the velocity of travel of the wafer.

US Patent:

6885429, Apr 26, 2005

Filed:

Nov 22, 2002

Appl. No.:

10/301627

Inventors:

Joseph H. Lyons - Wilton CT, US
Joseph G. Whelan - San Francisco CA, US

Assignee:

ASML Holding N.V. - Veldhoven

International Classification:

G03B027/42
G03B027/52
G03B027/32

US Classification:

355 53, 355 55, 355 61, 355 77

Abstract:

A system and method are used to calibrate a focus portion of an exposure section of a lithography tool. A wafer is exposed so that a resulted or formed patterned image is tilted with respect to the wafer. The tilting can be imposed based on controlling a wafer stage to tilt the wafer or a reticle stage to tilt the reticle. The wafer is developed. Characteristics of the tilted patterned image are measured with a portion of the lithography tool to determine focus parameters of an exposure system. The portion can be an alignment system. The measuring step can measure band width and/or band location of the tilted patterned image. Sometimes, more than one patterned image is formed on the wafer, then the measuring step can measure distance between bands and shifting of the bands with respect to a central axis of the wafer. The focus parameters can be focus tilt errors and/or focus offset. The focus parameters are used to perform calibration.

US Patent:

6979833, Dec 27, 2005

Filed:

Jul 14, 2004

Appl. No.:

10/890213

Inventors:

Joseph H. Lyons - Wilton CT, US

Assignee:

ASML Holding N.V.

International Classification:

G01J001/20
G01N021/86

US Classification:

250548, 356400, 355 53

Abstract:

A system for monitoring wafer surface topography during a lithographic process is described that includes means for capturing wafer position and surface data at a first time when a wafer is at a first location, means for generating correction data for a second wafer location prior to the wafer reaching the second wafer location, and means for storing the correction data in a spatial delay line. The means for capturing wafer position and surface data includes means for capturing backplane position data with a plurality of stalk gauges. The means for generating correction data includes means for converting the wafer position and surface data from a time-domain into a space domain. The system also includes means for moving the wafer based on the correction data when the wafer is at the second wafer location at a second time.

US Patent:

6984836, Jan 10, 2006

Filed:

May 12, 2003

Appl. No.:

10/435562

Inventors:

Joseph H. Lyons - Wilton CT, US

Assignee:

ASML Holding N.V.

International Classification:

G01J 1/20
G01N 21/86

US Classification:

250548, 356400, 355 53

Abstract:

A system for monitoring wafer surface topography during a lithographic process is described that includes projection optics that illuminate a portion of the wafer surface. The system further includes at least one off-axis wafer surface gauge that monitors wafer surface height relative to the projection optics as well as at least one backplane gauge that monitors wafer position relative to a backplane. The system also includes a filter that translates time-domain measurements of off-axis wafer surface gauge and the backplane gauge into space-domain measurements. A coordinate transformer is included that transforms the space-domain measurements into a single coordinate system. A computational element that combines the space-domain measurements with a focus set-point to determine correction data is also included together with a delay line for storing the correction data until the wafer has moved a predetermined distance.

US Patent:

7049618, May 23, 2006

Filed:

Oct 25, 2005

Appl. No.:

11/256938

Inventors:

Joseph H. Lyons - Wilton CT, US

Assignee:

ASML Holding N.V.

International Classification:

G01J 1/20

US Classification:

250548, 356400, 355 53

Abstract:

A virtual gauging method for use in a lithographic process includes gauging a region at a surface of a wafer when the region is located away from an axis of illumination producing wafer surface data, while other portions of the wafer are being illuminated. The method also includes acquiring time-domain measurements representing the wafer surface data and converting the time-domain measurements into space-domain measurements. This conversion can be done using a finite-impulse-response (FIR) filter. The FIR filter can be triggered with a spatial interrupt, and a width of the FIR filter is modified in response to a velocity of travel of the wafer. The method further includes converting space-domain measurements into wafer correction data.

US Patent:

7081948, Jul 25, 2006

Filed:

Apr 12, 2005

Appl. No.:

11/103427

Inventors:

Joseph H. Lyons - Wilton CT, US
Joseph G. Whelan - San Francisco CA, US

Assignee:

ASML Holding N.V. - Veldhoven

International Classification:

G03B 27/52
G03B 27/42

US Classification:

355 55, 355 53, 355 61

Abstract:

A system and method are used to calibrate a focus portion of an exposure section of a lithography tool. A wafer is exposed so that a resulted or formed patterned image is tilted with respect to the wafer. The tilting can be imposed based on controlling a wafer stage to tilt the wafer or a reticle stage to tilt the reticle. The wafer is developed. Characteristics of the tilted patterned image are measured with a portion of the lithography tool to determine focus parameters of an exposure system. The portion can be an alignment system. The measuring step can measure band width and/or band location of the tilted patterned image. Sometimes, more than one patterned image is formed on the wafer, then the measuring step can measure distance between bands and shifting of the bands with respect to a central axis of the wafer. The focus parameters can be focus tilt errors and/or focus offset. The focus parameters are used to perform calibration.

US Patent:

7134321, Nov 14, 2006

Filed:

Jul 20, 2004

Appl. No.:

10/894028

Inventors:

Daniel N. Galburt - Wilton CT, US
Earl W. Ebert - Oxford CT, US
Joseph H. Lyons - Wilton CT, US

Assignee:

ASML Holding N.V. - Veldhoven

International Classification:

G01B 13/08

US Classification:

73 375

Abstract:

A system and method that use a fluid gauge proximity sensor. A source of modulated unidirectional or alternating fluid flow travels along at least one path having a nozzle and a flow or pressure sensor. The fluid exists at a gap between the nozzle and a target. The sensor outputs an amplitude modulated signal that varies according to a size of the gap. The amplitude modulated signal is processed either digitally or in analog devices, which can include being filtered (e. g. , band pass, band limited, high pass, etc. filter) to include the modulated frequency and sufficient bandwidth on either side of that frequency and/or being demodulated using a demodulator operating at the acoustical driver modulation frequency. Using this system and method can result in only ambient acoustical energy in a desired frequency range of the device actually having the opportunity to interfere with the device operation. This can lower the devices overall sensitivity to external acoustical noise and sensor offset.

US Patent:

7472580, Jan 6, 2009

Filed:

Dec 29, 2006

Appl. No.:

11/647575

Inventors:

Joseph H. Lyons - Wilton CT, US
Peter C. Kochersperger - Easton CT, US
James Walsh - Newtown CT, US
Rajan Mali - Shelton CT, US

Assignee:

ASML Holding N.V. - Veldhoven

International Classification:

G01B 13/08
G01L 7/00

US Classification:

73 375, 73700

Abstract:

A vacuum-driven gas gauge proximity sensor for sensing a difference between a reference surface standoff and a measurement surface standoff is disclosed. Unlike existing proximity sensors, the vacuum-driven gas gauge proximity sensor uses a vacuum to reverse the traditional flow of gas through a proximity sensor, such that gas flows inward across measurement and reference standoffs through measurement and reference nozzles. The conditioned ambient gas that is vacuumed into the reference and measurement nozzles flows through reference and measurement channels that are coupled at a junction into a single channel. The single channel is coupled to the vacuum that is used to evacuate the conditioned ambient gas through the proximity sensor. A bridge channel couples the reference and measurement channels. A mass flow sensor along the bridge channel monitors flow rates to detect measurement standoffs that can be used to initiate a control action.