Joseph M Moran

US Patent:

6522817, Feb 18, 2003

Filed:

Dec 18, 2000

Appl. No.:

09/739045

Inventors:

Joseph M. Moran - Berkeley Heights NJ

Assignee:

Veritech, Inc. - Whippany NJ

International Classification:

G02B 604

US Classification:

385120, 29850

Abstract:

Preselected alignment of an array of N optical fibers is obtained using a relatively thick primary substrate with a thin layer mounted thereon. The primary substrate has a sufficient structure to support an array of N spaced-apart optical fibers passing therethrough. The primary substrate has first and second opposing surfaces and defines a plurality of N primary substrate apertures which each extend therethrough from the first surface to the second surface and have a cross-section which is greater than a cross-section of an optical fiber such that one of the N optical fibers can be inserted through each of the N primary substrate apertures. The layer is metal, is relatively thin, and engages one of the first and second opposing surfaces of the primary substrate, and defines N layer apertures therethrough. Centers of the layer apertures are aligned to a preselected tolerance value which is required for the array of elements.

US Patent:

6690875, Feb 10, 2004

Filed:

Dec 31, 2001

Appl. No.:

10/039453

Inventors:

Joseph M. Moran - Berkeley Heights NJ

Assignee:

Veritech, Inc. - Whippany NJ

International Classification:

G02B 604

US Classification:

385137, 385120, 29850

Abstract:

Alignment of an array of N elements, such as optical fibers, within a preselected tolerance value is obtained using a primary substrate with a plurality of N apertures extending therethrough from a first surface to a second opposing surface. Each aperture, at its narrowest point, has a cross-section that is greater than a cross-section of an element to be inserted therethrough. Each of the elements passes through its corresponding aperture and rests against the same corresponding point and/or sidewall of the aperture so as to result in the desired alignment. A directing arrangement directs the elements toward the primary substrate at a predetermined angle to cause a spring-like action to occur in each of the elements when threaded through its associated aperture for aligning the elements to engage the same corresponding point and/or sidewall of the aperture.

US Patent:

6764228, Jul 20, 2004

Filed:

Feb 7, 2002

Appl. No.:

10/071141

Inventors:

Joseph M. Moran - Berkeley Heights NJ

Assignee:

Veritech, Inc. - Whippany NJ

International Classification:

G02B 636

US Classification:

385 94, 385116, 257787, 439271, 439933, 156325

Abstract:

A hermetic package having connectors, such as optical fibers or electrical leads, connected and bonded thereto with a bonding material such as epoxy resin, has the bonding material coated with a single layer or multiple layers of sealing material, such as chromium, copper, gold, tungsten, titanium, nickel, or aluminum, to prevent outgased material from the bonding material from entering the hermetic package enclosure. The bonding material may be recessed prior to coating of the sealing material to permit the sealing material to be polished from the optical element and the optical element polished flush with the inside of the package while leaving the sealing material covering the bonding material.

US Patent:

43977243, Aug 9, 1983

Filed:

Aug 24, 1981

Appl. No.:

6/295839

Inventors:

Joseph M. Moran - Berkeley Heights NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

C23C 1500

US Classification:

204192E

Abstract:

In a plasma-assisted etching apparatus and method, surfaces in the reaction chamber are covered with a layer of a polyarylate polymer. Contamination of wafers during the etching process is thereby substantially reduced. In practice, this leads to a significant increase in the yield of acceptable chips per wafer.

US Patent:

43337937, Jun 8, 1982

Filed:

Oct 20, 1980

Appl. No.:

6/199023

Inventors:

Nadia Lifshitz - New Providence NJ
Joseph M. Moran - Berkeley Heights NJ
David N. Wang - Cupertino CA

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

B44C 122
C03C 1500
C03C 2506

US Classification:

156643

Abstract:

In a VLSI device fabrication process, erosion of a patterned resist layer (16, 18) during dry etching of an underlying layer (14) can significantly limit the high-resolution patterning capabilities of the process. As described herein, a protective polymer layer (60, 62) is formed and maintained only on the resist material (16, 18) while the underlying layer (14) is being etched. High etch selectivities are thereby achieved. As a consequence, very thin resist layers can be utilized in the fabrication process and very-high-resolution patterning for VLSI devices is thereby made feasible.

US Patent:

46800840, Jul 14, 1987

Filed:

Aug 21, 1984

Appl. No.:

6/642931

Inventors:

Peter A. Heimann - Clifton NJ
Joseph M. Moran - Berkeley Heights NJ
Ronald J. Schutz - Warren NJ

Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 21306
B44C 122
C03C 1500
C03C 2506

US Classification:

156626

Abstract:

The invention involves new etch monitoring and thickness measurement techniques which are more accurate than previous techniques. In accordance with the invention, the etch depth of a substrate region undergoing etching is monitored, or the thickness of the region is measured, by impinging the region with light and detecting the intensity of the reflected light. In contrast to the previous techniques, the incident light is chosen so that a substrate region underlying, and/or a patterned substrate region overlying the substrate region of interest is substantially opaque to the incident light, which precludes the formation of signals unrelated to etch depth or thickness.

US Patent:

39435296, Mar 9, 1976

Filed:

Feb 6, 1975

Appl. No.:

5/547555

Inventors:

Martin Feldman - Murray Hill NJ
Joseph Michael Moran - Berkeley Heights NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

G01D 942
H04N 300
B23K 900

US Classification:

346108

Abstract:

In pattern generating apparatus of the type employing a reciprocating laser beam for scanning a substrate surface, three scan lines are formed simultaneously. During reciprocation in one direction, the beam is deflected upwardly at an angle of arccot (1/3) with respect to the reciprocating direction, and during reciprocation in the opposite direction, the beam is deflected downwardly at an angle of arccot (1/3).

US Patent:

44002351, Aug 23, 1983

Filed:

Mar 25, 1982

Appl. No.:

6/362045

Inventors:

Gerald A. Coquin - New Providence NJ
Joseph M. Moran - Berkeley Heights NJ
Gary N. Taylor - Bridgewater NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H01L 21306
B44C 122
C03C 1500
C03C 2506

US Classification:

156643

Abstract:

In a plasma-assisted dry etching process designed to pattern VLSI devices, a relatively high and uniform etch rate exhibiting low contamination is achieved over the entire surface extent of each wafer to be etched. This is accomplished by mounting the wafers in a unique fashion on one of two spaced-apart electrodes in the reaction chamber of a dry etching system. In particular, the front surface of each wafer is maintained in substantially the same plane as that of surrounding dielectric material. Additionally, the thickness of the surrounding dielectric material is designed to be considerably greater than the thickness of any dielectric material in contact with the back surface of each wafer. In that way, the entire front surface extent of each wafer is influenced by a relatively uniform electric field. Moreover, the available field in the chamber is in effect focussed onto the wafer surfaces, thereby achieving a relatively high etch rate characterized by low contamination.