Joseph R Rose

US Patent:

20230020073, Jan 19, 2023

Filed:

Dec 2, 2020

Appl. No.:

17/756514

Inventors:

- Tempe AZ, US
Krishna P. Murella - Phoenix AZ, US
Joseph D. Rose - Gilbert AZ, US
Hongjun Zhou - Chandler AZ, US
Mark Leonard O'Neill - Queen Creek AZ, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

C09G 1/02
C09K 3/14
B24B 37/04
H01L 21/3105

Abstract:

High oxide film removal rate Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods, and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and a chemical additive for providing a high oxide film removal rate. The chemical additive is a gelatin molecule possessing negative and positive charges on the same molecule.

US Patent:

20210324270, Oct 21, 2021

Filed:

Jun 22, 2021

Appl. No.:

17/354311

Inventors:

- Tempe AZ, US
Krishna P. Murella - Phoenix AZ, US
Joseph D. Rose - Gilbert AZ, US
Hongjun Zhou - Chandler AZ, US
Mark Leonard O'Neill - Queen Creek AZ, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

C09K 13/00
C09K 13/02
C09K 13/06
H01L 21/3105

Abstract:

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO:SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(−)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

US Patent:

20210309885, Oct 7, 2021

Filed:

Jun 21, 2021

Appl. No.:

17/353236

Inventors:

- Tempe AZ, US
Krishna P. Murella - Phoenix AZ, US
Joseph D. Rose - Gilbert AZ, US
Hongjun Zhou - Chandler AZ, US
Mark Leonard O'Neill - Queen Creek AZ, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

C09G 1/02
H01L 21/321

Abstract:

Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.

US Patent:

20200239735, Jul 30, 2020

Filed:

Jan 8, 2020

Appl. No.:

16/737083

Inventors:

- Tempe AZ, US
Krishna P. Murella - Phoenix AZ, US
Joseph D. Rose - Gilbert AZ, US
Hongjun Zhou - Chandler AZ, US
Mark Leonard O'Neill - Queen Creek AZ, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

C09G 1/02
C09K 3/14
H01L 21/3105

Abstract:

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing high oxide film removal rate. The dual chemical additives comprise gelatin compounds possessing negative and positive charges on the same molecule, and non-ionic organic molecules having multi hydroxyl functional groups in the same molecule.

US Patent:

20200239736, Jul 30, 2020

Filed:

Jan 8, 2020

Appl. No.:

16/737417

Inventors:

- Tempe AZ, US
Krishna P. Murella - Phoenix AZ, US
Joseph D. Rose - Gilbert AZ, US
Hongjun Zhou - Chandler AZ, US
Mark Leonard O'Neill - Queen Creek AZ, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

C09G 1/02
H01L 21/3105
H01L 21/762

Abstract:

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates. Chemical additives comprise at least one nitrogen-containing aromatic heterocyclic compound and at least one non-ionic organic molecule having more than one hydroxyl functional group organic.

US Patent:

20200095502, Mar 26, 2020

Filed:

Sep 20, 2019

Appl. No.:

16/577358

Inventors:

- Tempe AZ, US
Joseph D. Rose - Gilbert AZ, US
Krishna P. Murella - Phoenix AZ, US
Hongjun Zhou - Chandler AZ, US
Mark Leonard O'Neill - Queen Creek AZ, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

C09K 13/06
H01L 21/3105
C09K 13/00
C09G 1/02

Abstract:

Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic oxide particles as abrasives, such as ceria-coated silica particles or any other ceria-coated inorganic oxide particles as core particles; suitable chemical additives comprising at least one organic carboxylic acid group, at least one carboxylate salt group or at least one carboxylic ester group and two or more hydroxyl functional groups in the same molecule; and a water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.

US Patent:

20200048496, Feb 13, 2020

Filed:

Aug 6, 2019

Appl. No.:

16/533542

Inventors:

- Tempe AZ, US
Krishna P. Murella - Phoenix AZ, US
Joseph D. Rose - Gilbert AZ, US
Hongjun Zhou - Chandler AZ, US
Mark Leonard O'Neill - Queen Creek AZ, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

C09G 1/02
H01L 21/321

Abstract:

The present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic metal oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the first group of non-ionic organic molecules multi hydroxyl functional groups in the same molecule; chemical additives selected from the second group of aromatic organic molecules with sulfonic acid group or sulfonate salt functional groups and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.

US Patent:

20200048551, Feb 13, 2020

Filed:

Aug 6, 2019

Appl. No.:

16/533381

Inventors:

- Tempe AZ, US
Chia-Chien Lee - Hsinchu, TW
Rung-Je Yang - Hsinchu, TW
Anu Mallikarjunan - Hsinchu, TW
Chris Keh-Yeuan Li - Hsinchu, TW
Hongjun Zhou - Tempe AZ, US
Joseph D. Rose - Gilbert AZ, US
Xiaobo Shi - Chandler AZ, US

Assignee:

Versum Materials US, LLC - Tempe AZ

International Classification:

C09K 13/04
C09G 1/02
C09K 13/00
H01L 21/3105
H01L 21/321

Abstract:

Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.