Joseph A Scott

US Patent:

6532706, Mar 18, 2003

Filed:

Nov 20, 2001

Appl. No.:

09/996433

Inventors:

Joseph H. Scott - Manasquan NJ 08736
Ruth A. Scott - Manasquan NJ 08736

International Classification:

E04C 252

US Classification:

522206, 5250607, 5250608

Abstract:

A gridless drop ceiling assembly having ledger boards mounted on opposing longitudinal walls of a room and extending the length of the opposing longitudinal walls, the ledger boards being mounted proximate to the height of the desired drop ceiling and in parallel relationship, a plurality of mounting studs positioned on the ledger boards, the mounted studs extending outwardly from the surface of the ledger boards, the mounting studs on opposing ledger boards being in aligned relationship, a plurality of ceiling beams generally rectangular in cross section having parallel upper and lower surfaces and parallel side surfaces and parallel opposing end surfaces, the ceiling beams dimensioned to the distance between the ledger boards, the ceiling beams having formed in the opposing end surfaces thereof an L-shaped slot in communication with one surface of the ceiling beam, the L-shaped slot having a depth at least equal to the height of the mounting stud on the ledger board for the slidable positioning of and locking of the opposing mounting studs into the mounting slots at opposing ends of the ceiling beam and a plurality of ceiling inserts supported by the ceiling beams forming a drop ceiling.

US Patent:

41697464, Oct 2, 1979

Filed:

Aug 2, 1978

Appl. No.:

5/930381

Inventors:

Alfred C. Ipri - Princeton NJ
Joseph H. Scott - Princeton NJ

Assignee:

RCA Corp. - New York NY

International Classification:

H01L 2186
H01L 2188
H01L 2972

US Classification:

148175

Abstract:

The integrated circuit is manufactured upside down relative to conventional silicon-on-sapphire (SOS) processing techniques for manufacturing field effect transistors. First a conductive pattern, typically of a refractory metal, is deposited and defined on an insulating substrate, such as sapphire, and then silicon transistors are formed over the conductive pattern. Using the process, a masking step, namely the contact definition mask, used in conventional SOS manufacture, is eliminated.

US Patent:

41602609, Jul 3, 1979

Filed:

Nov 17, 1977

Appl. No.:

5/852565

Inventors:

Charles E. Weitzel - Plainsboro NJ
Joseph H. Scott - Princeton NJ

Assignee:

RCA Corp. - New York NY

International Classification:

H01L 2978

US Classification:

357 23

Abstract:

A semiconductor device includes a region of polycrystalline silicon on a portion of the surface of a body of semiconductor material. A layer of oxidized polycrystalline silicon is also on the semiconductor material body and extends to the polycrystalline silicon region. The surface of the silicon oxide layer is substantially coplanar with the surface of the polycrystalline silicon region so that a metal film conductor can be easily provided over the semiconductor device. The polycrystalline silicon region may be the gate of an MOS transistor or a conductive region of any type of semiconductor device. The semiconductor device is made by forming a polycrystalline silicon layer over the semiconductor material body, forming a mask on a portion of the polycrystalline silicon layer, reducing the thickness of the unmasked portion of the polycrystalline silicon layer and then oxidizing the unmasked portion of the polycrystalline silicon layer to form the oxide layer.

US Patent:

39483550, Apr 6, 1976

Filed:

Jan 31, 1975

Appl. No.:

5/545970

Inventors:

Joseph J. Scott - Philadelphia PA

International Classification:

F03G 100

US Classification:

185 39

Abstract:

A variable retracting device comprising a collapsible elongated tubular element providing a cavity therealong for receiving fluid therein and having first and second ends. A fluid reservoir means communicates with the cavity of the tubular element at its first end and has control means for regulating the flow of fluid between the cavity of the tubular element and the reservoir means. A restricting means engages and collapses the tubular element at locations between its first and second ends and is movable along the collapsed portion of the tubular element up to the uncollapsed portion containing fluid. An activating means urges the relative movement of the restricting means along and towards the first end of the tubular element creating a fluid pressure in the uncollapsed portion of the tubular element, whereby the relative movement of the restricting means along and towards the first end of the tubular element takes place with the collapse of the tubular element at the location of the restricting means and at a rate depending upon the flow of fluid from the cavity of the tubular element to the fluid reservoir means and regulated by the control means of the fluid reservoir means.

US Patent:

42637090, Apr 28, 1981

Filed:

Dec 22, 1978

Appl. No.:

5/972410

Inventors:

Charles E. Weitzel - Plainsboro NJ
Joseph H. Scott - Princeton NJ

Assignee:

RCA Corporation - New York NY

International Classification:

B01J 1700

US Classification:

29571

Abstract:

A semiconductor device includes a region of polycrystalline silicon on a portion of the surface of a body of semiconductor material. A layer of oxidized polycrystalline silicon is also on the semiconductor material body and extends to the polycrystalline silicon region. The surface of the silicon oxide layer is substantially coplanar with the surface of the polycrystalline silicon region so that a metal film conductor can be easily provided over the semiconductor device. The polycrystalline silicon region may be the gate of an MOS transistor or a conductive region of any type of semiconductor device. The semiconductor device is made by forming a polycrystalline silicon layer over the semiconductor material body, forming a mask on a portion of the polycrystalline silicon layer, reducing the thickness of the unmasked portion of the polycrystalline silicon layer and then oxidizing the unmasked portion of the polycrystalline silicon layer to form the oxide layer.

US Patent:

40310558, Jun 21, 1977

Filed:

May 28, 1975

Appl. No.:

5/581592

Inventors:

John A. Dupont - Glenside PA
Walter Kooch - Feasterville PA
Joseph D. Scott - Philadelphia PA

Assignee:

Rohm and Haas Company - Philadelphia PA

International Classification:

C09D 374
C09D 380
C09D 514

US Classification:

260 296MM

Abstract:

Coating compositions which contain a mildew controlling amount of an isothiazolone are stabilized against chemical decomposition of the isothiazolone by the addition of a metallic compound. Among the compounds which can be used are the acetates, carbonates, chlorides, bromides, nitrates, sulfates, phosphates, and oxides of cadmium, cobalt, copper, lead, manganese, mercury, nickel, silver and zinc.

US Patent:

42016037, May 6, 1980

Filed:

Dec 4, 1978

Appl. No.:

5/966510

Inventors:

Joseph H. Scott - Plainsboro NJ
Alfred C. Ipri - Princeton NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 21225
H01L 21308

US Classification:

148174

Abstract:

A method for fabricating a short channel MOS device is described wherein the conductivity of the gate member is increased by a factor of about 2. 5 by counterdoping a P-type doped polycrystalline line with an N-type dopant.

US Patent:

41199928, Oct 10, 1978

Filed:

Apr 28, 1977

Appl. No.:

5/791945

Inventors:

Alfred Charles Ipri - Princeton NJ
Joseph Hurlong Scott - Princeton NJ

Assignee:

RCA Corp. - New York NY

International Classification:

H01L 2712

US Classification:

357 4

Abstract:

The integrated circuit is manufactured upside down relative to conventional silicon-on-sapphire (SOS) processing techniques for manufacturing field effect transistors. First a conductive pattern, typically of a refractory metal, is deposited and defined on an insulating substrate, such as sapphire, and then silicon transistors are formed over the conductive pattern. Using the process, a masking step, namely the contact definition mask, used in conventional SOS manufacture, is eliminated.