Julio C Reyes

US Patent:

7545217, Jun 9, 2009

Filed:

May 12, 2004

Appl. No.:

10/844649

Inventors:

Julio Reyes - Leonia NJ, US

Assignee:

Anadigics, Inc. - Warren NJ

International Classification:

H03G 3/30

US Classification:

330285, 330297

Abstract:

A method and circuit system for improving power efficiency of RF power amplifiers is disclosed. A preferred embodiment comprises a power amplifier comprising: a plurality of amplifier stages, a power regulator providing an output supply voltage at an output node responsive to an adjustable power control signal, wherein the output supply voltage is applied to at least one stage of a power amplifier; and an amplifier biaser providing a bias signal corresponding to the adjustable power control signal, wherein the output supply voltage and the bias signal are independently generated as functions of the adjustable power control signal.

US Patent:

8258876, Sep 4, 2012

Filed:

Jan 7, 2011

Appl. No.:

12/986915

Inventors:

David Osika - Neshanic Station NJ, US
Joel Lott - Quakertown PA, US
Julio Reyes - Leonia NJ, US

Assignee:

Anadigics, Inc. - Warren NJ

International Classification:

H02H 7/20

US Classification:

330298, 330279

Abstract:

A protection circuit for a power amplifier connected as a negative feedback loop around the power amplifier. The negative feedback loop comprises a detector circuit, a driver circuit and an attenuator circuit. The detector circuit receives output voltage from the power amplifier and generates a signal when the output voltage exceeds a predefined threshold. The driver circuit filters the signal received from the detector circuit to maintain feedback loop stability and adjusts the feedback loop bandwidth and gain to provide a filtered signal. The attenuator circuit receives the filtered signal and attenuates the input voltage of the power amplifier to reduce the output voltage of the power amplifier to a level below the predefined threshold.

US Patent:

20190173381, Jun 6, 2019

Filed:

Feb 7, 2019

Appl. No.:

16/270499

Inventors:

- Milpitas CA, US
Thomas HAYES - Berkeley Heights NJ, US
Andrew L. Webb - Hamilton NJ, US
Julio REYES - Leonia NJ, US

International Classification:

H02M 3/158
G01K 13/00
G01R 19/00

Abstract:

Current sensing with RDScorrection is disclosed. In an embodiment, a method comprises: measuring an approximate temperature of a MOS transistor switch by a temperature sensor to yield a measured temperature; calculating a corrected temperature from the measured temperature using a stored temperature sensor gain and offset correction function; measuring a gate drive voltage for the MOS transistor; calculating a voltage correction factor using a stored voltage correction function, wherein the stored voltage correction function is a function of the corrected temperature and the gate drive voltage; measuring a RDSvoltage drop across the MOS transistor switch to yield a measured RDSvoltage drop; and calculating the current using the measured RDSdrop and the voltage correction factor.

US Patent:

20180287495, Oct 4, 2018

Filed:

Jun 4, 2018

Appl. No.:

15/997415

Inventors:

- Milpitas CA, US
Thomas HAYES - Berkeley Heights NJ, US
Andrew L. Webb - Hamilton NJ, US
Julio REYES - Leonia NJ, US

International Classification:

H02M 3/158
G01R 19/00
G01K 13/00
H02M 1/32
H02M 1/00
G01R 35/00

Abstract:

Current sensing with RDScorrection is disclosed. In an embodiment, a method comprises: measuring an approximate temperature of a MOS transistor switch by a temperature sensor to yield a measured temperature; calculating a corrected temperature from the measured temperature using a stored temperature sensor gain and offset correction function; measuring a gate drive voltage for the MOS transistor; calculating a voltage correction factor using a stored voltage correction function, wherein the stored voltage correction function is a function of the corrected temperature and the gate drive voltage; measuring a RDSvoltage drop across the MOS transistor switch to yield a measured RDSvoltage drop; and calculating the current using the measured RDSdrop and the voltage correction factor.

US Patent:

20160065067, Mar 3, 2016

Filed:

Dec 16, 2014

Appl. No.:

14/572361

Inventors:

- Milpitas CA, US
Thomas Hayes - Berkeley Heights NJ, US
Andrew L. Webb - Hamilton NJ, US
Julio Reyes - Leonia NJ, US

International Classification:

H02M 3/158
G01R 35/00
G01K 13/00
G01R 19/25

Abstract:

Current sensing with RDScorrection is disclosed. In an embodiment, a method comprises: measuring an approximate temperature of a MOS transistor switch by a temperature sensor to yield a measured temperature; calculating a corrected temperature from the measured temperature using a stored temperature sensor gain and offset correction function; measuring a gate drive voltage for the MOS transistor; calculating a voltage correction factor using a stored voltage correction function, wherein the stored voltage correction function is a function of the corrected temperature and the gate drive voltage; measuring a RDSvoltage drop across the MOS transistor switch to yield a measured RDSvoltage drop; and calculating the current using the measured RDSdrop and the voltage correction factor.