Jun H Lee

US Patent:

20210384041, Dec 9, 2021

Filed:

Aug 19, 2021

Appl. No.:

17/406183

Inventors:

- Santa Clara CA, US
Timothy J. Miller - Ipswich MA, US
Jun Seok Lee - Andover MA, US
Il-Woong Koo - Andover MA, US
Deven Raj Mittal - Middleton MA, US

International Classification:

H01L 21/322
H01L 21/263

Abstract:

A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

US Patent:

20200373170, Nov 26, 2020

Filed:

May 21, 2019

Appl. No.:

16/417853

Inventors:

- Santa Clara CA, US
Timothy J. Miller - Ipswich MA, US
Jun Seok Lee - Andover MA, US
Il-Woong Koo - Andover MA, US
Deven Raj Mittal - Middleton MA, US

International Classification:

H01L 21/322

Abstract:

A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

US Patent:

20190348509, Nov 14, 2019

Filed:

May 11, 2018

Appl. No.:

15/977324

Inventors:

- Gloucester MA, US
Wenhui Wang - Gloucester MA, US
Jun Lee - Andover MA, US
Sony Varghese - Manchester MA, US

Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

International Classification:

H01L 29/40
H01L 29/66
H01L 21/28
H01L 21/321
H01L 29/49

Abstract:

A method may include providing a device structure, where the device structure includes a semiconductor region, and a gate structure, disposed over the semiconductor region. The gate structure may further include a gate metal. The method may further include oxidizing an upper portion of the gate metal, wherein the upper portion forms an oxide cap, and wherein a lower portion of the gate metal remains metallic.