Karen M Gleason

US Patent:

6509138, Jan 21, 2003

Filed:

Jan 12, 2000

Appl. No.:

09/482193

Inventors:

Karen K. Gleason - Lexington MA
Christopher Ober - Ithaca NY
Daniel Herr - Chapel Hill NC

Assignee:

Semiconductor Research Corporation - Research Park NC
Cornell Research Foundation, Inc. - Ithaca NY
Massachusetts Institute of Technology - Cambidge MA

International Classification:

G03F 726

US Classification:

430313, 430311, 430331, 216 62

Abstract:

Processes for patterning radiation sensitive layers are disclosed. In one embodiment, the process includes depositing a radiation sensitive material on a substrate by chemical vapor deposition. The radiation sensitive material is exposed to radiation to form a pattern and the pattern is developed using a supercritical fluid (SCF).

US Patent:

6887578, May 3, 2005

Filed:

Oct 29, 2002

Appl. No.:

10/282905

Inventors:

Karen K. Gleason - Lexington MA, US
Shashi K. Murthy - Cambridge MA, US

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

B32B025/20

US Classification:

428447, 427588, 427592, 427249, 4272552, 4272556, 4272557, 428421, 428500, 428377, 428373, 428374

Abstract:

Hot-filament chemical vapor deposition has been used to deposit copolymer thin films consisting of fluorocarbon and siloxane groups. The presence of covalent bonds between the fluorocarbon and organosilicon moieties in the thin film has been confirmed by Infrared, X-ray Photoelectron (XPS) and solid-state Si, F, and C Nuclear Magnetic Resonance (NMR) spectroscopy. The film structure consists of chains with linear and cyclic siloxane groups and CFgroups as repeat units.

US Patent:

6946736, Sep 20, 2005

Filed:

Oct 23, 2002

Appl. No.:

10/279304

Inventors:

Karen K. Gleason - Lexington MA, US
Christopher Ober - Ithaca NY, US
Daniel Herr - Chapel Hill NC, US

Assignee:

Semiconductor Research Corporation - Research Park NC
Cornell Research Foundation, Inc. - Ithaca NY
Massachusetts Institute of Technology - Cambridge MA

International Classification:

H01L023/12

US Classification:

257758, 257750, 257759

Abstract:

Provided is a process for lithographically patterning a material on a substrate comprising the steps of (a) depositing a radiation sensitive material on the substrate by chemical vapor deposition; (b) selectively exposing the radiation sensitive material to radiation to form a pattern; and (c) developing the pattern using a supercritical fluid (SCF) as a developer. Also disclosed is a microstructure formed by the foregoing process. Also disclosed is a process for lithographically patterning a material on a substrate wherein after steps (a) and (b) above, the pattern is developed using a dry plasma etch. Also disclosed is a microstructure comprising a substrate; and a patterned dielectric layer, wherein the patterned dielectric layer comprises at least one two-dimensional feature having a dimensional tolerance more precise than 7%. Also disclosed is a microelectronic structure comprising a substrate; a plurality of transistors formed on the substrate; and a plurality of conductive features formed within a dielectric pattern, wherein the plurality of conductive features include at least one two-dimensional feature having a dimensional tolerance more precise than 7%.

US Patent:

7112615, Sep 26, 2006

Filed:

Jul 22, 2003

Appl. No.:

10/624959

Inventors:

Karen K. Gleason - Lexington MA, US
Qingguo Wu - Tualatin OR, US
April Ross - Cambridge MA, US

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

C08J 9/26

US Classification:

521 77, 438409, 438781, 438778, 438780, 438782, 438960

Abstract:

Methods and systems are disclosed for fabricating ultra-low dielectric constant porous materials. In one aspect of the invention, a method for making porous low-k films is disclosed. The method uses polymer based porogens as sacrificial templates around which a chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD) deposited matrix is formed. Upon pyrolysis, the porogens decompose resulting in a porous ultra-low dielectric material. This method can be used, for example, to produce porous organosilicate glass (OSG) materials, ultra-low dielectric nanoporous materials, porous ceramics, porous scaffolds, and/or porous metals. Various uses and embodiments of the methods and systems of this invention are disclosed.

US Patent:

7190871, Mar 13, 2007

Filed:

Apr 9, 2003

Appl. No.:

10/410061

Inventors:

John Lock - Cambridge MA, US
Lionel C. Kimerling - Concord MA, US
Karen K. Gleason - Lexington MA, US

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

G02B 6/10

US Classification:

385129, 385130, 385131, 385132

Abstract:

A waveguide structure includes a substrate. A layer of high index material includes polysilane, which is patterned using a UV light source to form a waveguide.

US Patent:

7227678, Jun 5, 2007

Filed:

Jun 25, 2002

Appl. No.:

10/179055

Inventors:

Leslie S. S. Loo - Cambridge MA, US
Michal Lipson - Waltham MA, US
Karen K. Gleason - Lexington MA, US
Lionel C. Kimerling - Concord MA, US

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

G02F 1/03

US Classification:

359260

Abstract:

An optical structure includes a substrate having two side surfaces. A first layer of high refractive index material is formed on the substrate. A sacrificial layer is formed on the first layer. A second layer of high refractive index material is formed on the sacrificial layer. At a predefined temperature the sacrificial layer is evaporated, thus forming an air gap between the first layer and the second layer.

US Patent:

7431969, Oct 7, 2008

Filed:

Aug 5, 2005

Appl. No.:

11/198932

Inventors:

Karen K. Gleason - Lexington MA, US
Kelvin Chan - Santa Clara CA, US

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

C23C 16/00

US Classification:

4272556, 42725528

Abstract:

In one embodiment of the invention, iCVD is used to form linear thin films using a radical initiator and an alkene. In another embodiment, iCVD is used to form crosslinked thin films by the addition of a crosslinking agent (e. g. , a diacrylate or a dimethyacrylate). The incorporation of a crosslinking agent into the thin films is shown to increase systematically with its partial pressure. In one embodiment, when the crosslinker is EDGA and the monomer is HEMA it results in crosslinked P(HEMA-co-EGDA) copolymer. In another embodiment, when the crosslinker is EDGA and the monomer is VP, it results in crosslinked P(VP-co-EGDA). Disclosed are the effects of crosslinker incorporation on the thermal and the wetting properties of the polymers. The unique swelling properties of these films are also described; certain films of the present invention are hydrogels when soaked in water.

US Patent:

7563734, Jul 21, 2009

Filed:

Apr 11, 2005

Appl. No.:

11/103360

Inventors:

Karen K. Gleason - Lexington MA, US
Tyler Phillip Martin - Quincy MA, US
Kelvin Chan - Cambridge MA, US

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

B32B 27/04
A61F 13/00
A61L 15/00

US Classification:

442123, 424443, 424445, 424446, 424447

Abstract:

One aspect of the present invention is directed to antimicrobial surfaces comprised of hydrocarbon polymers with significant hydrophobic character which also contain an amino group with a pKa greater than or equal to about 8. In certain embodiments initiated chemical vapor deposition (iCVD) is used to coat a surface with an antimicrobial polymer.

Address:

4710 Leighfield Vly Dr, Chantilly, VA 20151

VIN:

JM3TB28Y270119070

Make:

MAZDA

Model:

CX-9

Year:

2007