Karl Hans Kocmanek

US Patent:

52525201, Oct 12, 1993

Filed:

Oct 31, 1991

Appl. No.:

7/786230

Inventors:

Karl H. Kocmanek - Orlando FL
Leonard J. Olmer - Orlando FL

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2100
H01L 2102
H01L 21302
H01L 21463

US Classification:

437235

Abstract:

A method for forming a dielectric layer in an integrated circuit is disclosed. After a first dielectric layer is formed, a second dielectric layer is formed on top of the first layer. The second layer is formed by reducing precursor gas flow during the initial portion of the deposition process so that the initial film density of the deposited dielectric is higher or equal to the density of the bulk of the first and second dielectric.

US Patent:

44365098, Mar 13, 1984

Filed:

May 10, 1982

Appl. No.:

6/376572

Inventors:

Karl H. Kocmanek - Lake Park FL
Robert C. Shambelan - Tequesta FL

Assignee:

RCA Corporation - New York NY

International Classification:

F27D 500

US Classification:

432253

Abstract:

A movable control or reception chamber is provided at the loading-unloading chamber of a diffusion furnace to control the environment around the wafers both before and after the wafers are removed from processing in the furnace tube. The reception chamber is capable of controlling the heat-up temperature prior to insertion of the wafers into the furnace while during the cool-down phase the heat given off is both controlled and prevented from being dissipated into the room.