Kathleen Dore Boyce

US Patent:

20060131163, Jun 22, 2006

Filed:

Dec 16, 2004

Appl. No.:

11/014490

Inventors:

Ping Mei - Palo Alto CA, US
Jurgen Daniel - Mountain View CA, US
James Boyce - Los Altos CA, US
Kathleen Boyce - Ashland OR, US
Jackson Ho - Palo Alto CA, US
Rachel Lau - San Jose CA, US
Yu Wang - Union City CA, US

International Classification:

C25D 21/12

US Classification:

204228800, 204228900, 204230700

Abstract:

Cells can include variable volumes defined between a flexible structure, such as a polymer layer, and a support surface, with the flexible structure and support surface being attached in a first region that surrounds a second region in which they are unattached. Various adhesion structures can attach the flexible structure and the support surface. When unstretched, the flexible structure can lie in a flat position on the support surface. In response to a stretching force away from the support surface, the flexible structure can move out of the flat position, providing the variable volume. Electrodes, such as on the flexible structure, on the support surface, and over the flexible structure, can have charge levels that couple with each other and with the variable volume. A support structure can include a device layer with signal circuitry that provides a signal path between an electrode and external circuitry. One or more ducts can provide fluid communication with each cell's variable volume. Arrays of such cells can be implemented for various applications, such as optical modulators, displays, printheads, and microphones.

US Patent:

20060255422, Nov 16, 2006

Filed:

Jul 25, 2006

Appl. No.:

11/491998

Inventors:

JengPing Lu - San Jose CA, US
James Boyce - Los Altos CA, US
Kathleen Boyce - Los Altos CA, US

Assignee:

PALO ALTO RESEARCH CENTER, INCORPORATED - Palo Alto CA

International Classification:

H01L 31/00

US Classification:

257458000

Abstract:

A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in the invention allows to achieve mass production of photosensors without the use of wire bonding.

US Patent:

20090160006, Jun 25, 2009

Filed:

Feb 25, 2009

Appl. No.:

12/379581

Inventors:

JengPing Lu - San Jose CA, US
James B. Boyce - Los Altos CA, US
Kathleen Dore Boyce - Los Altos CA, US

Assignee:

Palo Alto Research Center, Inc. - Palo Alto CA

International Classification:

H01L 31/105
H03K 3/01

US Classification:

257458, 327534, 257E31061

Abstract:

A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.

US Patent:

20090160007, Jun 25, 2009

Filed:

Feb 25, 2009

Appl. No.:

12/392943

Inventors:

JengPing Lu - San Jose CA, US
James B. Boyce - Los Altos CA, US
Kathleen Dore Boyce - Los Altos CA, US

Assignee:

PALO ALTO RESEARCH CENTER, INC. - Palo Alto CA

International Classification:

H01L 31/105
H01L 27/144

US Classification:

257458, 257494, 257459, 257E29012, 257E31061

Abstract:

A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.

US Patent:

20110003405, Jan 6, 2011

Filed:

Jul 1, 2009

Appl. No.:

12/495827

Inventors:

Chingwen Yeh - Cupertino CA, US
James B. Boyce - Los Altos CA, US
Kathleen Boyce - Shelburne VT, US
Jingkuang Chen - Rochester NY, US
Feixia Pan - Cypress CA, US
Joel A. Kubby - Rochester NY, US

Assignee:

XEROX CORPORATION - Norwalk CT

International Classification:

H01L 21/30

US Classification:

438 21, 257E21211

Abstract:

Method and device for forming a membrane includes providing a glass substrate, and depositing a thin layer of chromium on the glass substrate. The thin layer of chromium is patterned to form a deflection electrode and interconnect leads. A sacrificial layer of aluminum is deposited on top of the patterned chromium layer, then the sacrificial layer is patterned to define anchor regions. On top of the sacrificial layer, a thick layer of chromium is deposited, and the thick layer of chromium is patterned to form a membrane. The sacrificial layer is then etched to release the membrane.

US Patent:

20050133813, Jun 23, 2005

Filed:

Dec 22, 2003

Appl. No.:

10/740466

Inventors:

JengPing Lu - San Jose CA, US
James Boyce - Los Altos CA, US
Kathleen Boyce - Los Altos CA, US

Assignee:

PALO ALTO RESEARCH CENTER, INCORPORATED - PALO ALTO CA

International Classification:

H01L029/74

US Classification:

257119000

Abstract:

A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.