Kathleen Kash

US Patent:

50123041, Apr 30, 1991

Filed:

Mar 16, 1989

Appl. No.:

7/324311

Inventors:

Kathleen Kash - Freehold NJ
John M. Worlock - Fair Haven NJ

Assignee:

Bell Communications Research, Inc. - Livingston NJ

International Classification:

H01L 29000
H01L 49000
H01L 29240
H01L 29960

US Classification:

357007

Abstract:

A semi-conductor device having the properties of carrier confinement induced by local variations of strain comprising a semi-conductor base material, a vertical confinement layer over the semi-conductor base material for vertical confining charge carriers and a strain layer which creates a local strain pattern in the underlying semi-conductor material which strain pattern laterally confines charge carriers in accordance with the strain pattern. The semi-conductor base may include a quantum-well, e. g. , one formed utilizing a superlattice structure, where the charge carriers are laterally confined within the quantum well by the strain pattern.