Kathleen A Perry

US Patent:

52468852, Sep 21, 1993

Filed:

Aug 20, 1992

Appl. No.:

7/933951

Inventors:

Bodil E. Braren - Hartsdale NY
Karen H. Brown - Yorktown Heights NY
Kathleen A. Perry - West Hills CA
Rangaswamy Srinivasan - Yorktown Heights NY
Alvin Sugerman - Hopewell Junction NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2100
H01L 2102
H01L 21302
H01L 21463

US Classification:

437225

Abstract:

A method for providing superior fill of features in semiconductor processing utilizes a laser ablation system. Deposition is obtained by ablating target materials which are driven off perpendicular to the target in the direction of the deposition surface. The method provides complete fill of high aspect ratio features with nominal heating of the substrate. Alloys and graded layers, as well as pure metals, can be deposited in low temperature patterned layers. In addition, the system has been used to achieve superior trench filling for isolation structures.