Kelly H Block

US Patent:

20020132560, Sep 19, 2002

Filed:

Jan 12, 2001

Appl. No.:

09/759583

Inventors:

Qiuliang Luo - Newport Beach CA, US
Qianqiu (Christine) Ye - Wilmington DE, US
Kelly Block - Elkton MD, US

International Classification:

B24B001/00

US Classification:

451/036000, 451/041000

Abstract:

A chemical mechanical polishing method is provided for polishing substrates with one or more barrier layers on an underlying dielectric layer utilizing a polishing composition with a high selectivity for removal of the barrier layer material (for e.g. tantalum) resulting in a substrate with a planar dielectric layer with minimal scratching and erosion.

US Patent:

20020132563, Sep 19, 2002

Filed:

Dec 4, 2001

Appl. No.:

10/005253

Inventors:

Qiuliang Luo - Newbury Park CA, US
Qianqiu Ye - Wilmington DE, US
Kelly Block - Boothwyn PA, US

International Classification:

B24B001/00
C09C001/68

US Classification:

451/041000, 051/307000

Abstract:

According to the invention, an aqueous polishing composition comprises, abrasive particles and water of basic pH to remove a barrier layer by CMP using a polishing pad, the aqueous polishing composition farther comprising, solely polar molecules each having multiple, polar bonding sites forming respective hydrogen bonds with silanol bonding groups on a hydrated silicon dielectric layer of a semiconductor substrate, which form an hydrophilic protective film of the polar molecules that minimizes erosion.

US Patent:

20030139069, Jul 24, 2003

Filed:

Nov 27, 2002

Appl. No.:

10/305572

Inventors:

Kelly Block - Boothwyn PA, US
Vikas Sachan - Richardson TX, US

International Classification:

H01L021/302
H01L021/461

US Classification:

438/962000, 438/692000

Abstract:

Disclosed is a chemical mechanical planarizing method useful for removing silicon carbide hardmask capping materials in the presence of Low-k dielectrics contained on semiconductor wafers. The method uses zirconia-containing slurries at acidic pH levels with the abrasive having a positive zeta potential to facilitate silicon carbide removal.