Kelly C. Casey - Flower Mound TX Dennis M. McCoy - Dallas TX Darren Daugherty - Irving TX
Assignee:
Teccor Electronics, LP - Irving TX
International Classification:
H05K 114
US Classification:
361736, 361719, 361720
Abstract:
A telephone line protection module having a printed circuit board base with conductive paths connected to pins of the module. Overvoltage sensitive semiconductor devices are soldered to the ends of a conductive bridge, and the bridge is spring-biased between a module cover and the conductive bridge. The semiconductor devices are thus forced into electrical contact with the printed circuit paths. In addition, in the event the semiconductor devices are thermally destroyed, the conductive bridge is forced by the spring into direct contact with the printed circuit paths.
Kelly C. Casey - Flower Mound TX Dennis M. McCoy - Dallas TX
Assignee:
Teccor Electronics, LP - Irving TX
International Classification:
H02H 322
US Classification:
361119
Abstract:
A telephone line protection element constructed of three lead frames having contact fingers for holding therebetween a semiconductor cell providing overvoltage protection between the telephone line and the customer circuits. The lead frames are soldered to a resistive semiconductor material to provide a fail-safe mechanism that mechanically connects either the tip or ring telephone line conductors to ground if a sufficient overcurrent exists. In response to an overcurrent, the resistive semiconductor material generates heat and melts the solder in contact therewith, which allows a pre-bent member of the lead frame to move in contact with a ground terminal, thereby shunting the overcurrent to ground. The entire protection element includes very few components and is efficiently assembled and attached to the pins of a 5-pin module.
Semiconductor Device Providing Overvoltage And Overcurrent Protection For A Line
An integrated circuit ( ) providing overvoltage and overcurrent protection to a line ( ). The integrated circuit ( ) is constructed to provide overvoltage protection when a voltage exceeding a specified magnitude is impressed across the cathode and anode terminals ( ), irrespective of the gate-cathode current. A gate terminal ( ) is provided to trigger the overvoltage protection device into conduction when a gate current exceeding a predefined value is carried on the line ( ). The gate-cathode structure of the integrated circuit ( ) includes a semiconductor resistance ( ) which functions to make the gate current required for turn on higher, thereby allowing the gate-cathode terminals ( ) of the integrated circuit ( ) too be connected in series with the line ( ) to be protected.
A connector block formed in a semiconductor chip to provide all contacts on the same side of the chip. The connector block is preferably formed by driving a slow diffusing dopant deep into the chip from both sides until the diffused dopant overlaps in the middle of the chip. The connector block is metalized with a top contact and connected to circuits. The bottom of the connector block is metallized and connected to other bottom side contacts which, in turn may be connected to circuits. This arrangement effectively allows all contacts to be available from the top side of the semiconductor chip.
Very Low Voltage Actuated Thyristor With Centrally-Located Offset Buried Region
A semiconductor thyristor device that incorporates buried regions centrally located on the chip with respect to the other semiconductor regions. By centering an upper and lower buried region, larger-area contacts can be realized, thereby increasing the current capability of the device. In order to achieve low breakover voltage devices, the buried regions are offset laterally with respect to the respective emitter regions. The low voltage thyristor devices can be incorporated into five-pin protection modules for protecting customer circuits.
Kelly C. Casey - Flower Mound TX Dimitris Jim Pelegris - Mount Prospect IL
Assignee:
Teccor Electronics, LP - Irving TX
International Classification:
H01L 2972
US Classification:
257173, 257163, 257167, 257174, 257177, 257182
Abstract:
A semiconductor thyristor device incorporates buried regions to achieve low breakover voltage devices, and the buried regions are offset laterally with respect to the emitter regions. The low voltage thyristor devices can be incorporated into five-pin protection modules for protecting customer circuits.
Thyristor Circuit Providing Overcurrent Protection To A Low Impedance Load
A thyristor provides overcurrent protection to a low impedance load, such as a transformer, by adding a resistance in series with the transformer winding. As overcurrents attempt to pass through the transformer winding, a sufficient voltage is generated in the transformer so that a thyristor connected thereacross is triggered into conduction. A resistance formed between the thyristor gate and cathode establishes the threshold of current that can pass through the transformer winding before the thyristor is triggered. When triggered into conduction, the thyristor shunts the current and the transformer is thus protected.
Semiconductor Device For Low Voltage Protection With Low Capacitance
A semiconductor thyristor device that incorporates buried region breakdown junctions laterally offset from an emitter region. By spacing the buried regions around the emitter region, current carriers emitted from the buried regions are distributed over a large area of the emitter region, thereby providing a high current capability during initial turn on of the device. In order to achieve low breakover voltage devices, the buried regions are characterized with high impurity concentrations, with the breakdown junctions located near the surface of the chip. The low voltage thyristor device minimizes the area of high dopant concentration junctions, thus minimizing the chip capacitance and permitting high speed, low voltage signal operation.
Resumes
Mortgage Sales Recruiter At Capital One Home Loans
Mortgage Sales & Fulfillment Recruiter at Capital One Home Loans
Location:
Dallas/Fort Worth Area
Industry:
Financial Services
Work:
Capital One Home Loans - Wilmington, DE since Jun 2011
Mortgage Sales & Fulfillment Recruiter
Morgan Stanley Smith Barney May 2010 - Jun 2011
Corporate Recruiter
Benchmark Mortgage Jul 2002 - May 2010
Director of Business Development
Awards:
Recruiter of The Year 2012 Capital One Financial Services
Walmart since Apr 2012
Construction Manager - REL
Wal-Mart Stores, Inc Mar 2010 - Mar 2012
Remodel Construction Manager
CVS/Caremark May 2006 - Apr 2009
Construction Project Manager
Zale Corporation Oct 1998 - May 2006
Director of Construction
Southern Multifoods Aug 1996 - Oct 1998
Construction Project Manager
Education:
Stephen F. Austin State University 1992 - 1996
Bachelor of Science, Enviornmental Science
Advocacy Banking Business Civil Litigation Commercial Litigation Insurance Litigation Medical Malpractice Personal Injury Trial Advocacy Personal Injury
Greenfield Union Elementary School Detroit MI 1975-1976, Grayling Elementary School Detroit MI 1976-1980, Nolan Junior High School Detroit MI 1980-1983, Von Steuben Junior High School Detroit MI 1983-1984
Community:
Jackee Phillips, Phillip Kwiatkowski, Fred Martin, Mark Koczab
Biography:
Life
I have actually been living in Oklahoma for the past 10 years, needed a change ...