Kenneth T Farmer

US Patent:

20050194979, Sep 8, 2005

Filed:

Mar 5, 2004

Appl. No.:

10/794177

Inventors:

Harry Roman - East Orange NJ, US
Kenneth Farmer - Lake Elmo MN, US
Xiaodong Wang - East Newark NJ, US
Baoqing Li - Harrison NJ, US

International Classification:

G01R031/08
G01R031/12
H01H009/50

US Classification:

324536000

Abstract:

An approved method and apparatus for detecting partial discharge events within a transformer comprises asserting a MEMS acoustical probe through the wall of the transformer to optically measure partial discharge events. In an enhanced embodiment, temperature compensation is also possible, and detection may be confirmed via an independent electromagnetic or other sensor.

US Patent:

58438327, Dec 1, 1998

Filed:

Mar 1, 1995

Appl. No.:

8/396237

Inventors:

Kenneth R. Farmer - Newark NJ
Thomas G. Digges - Fredericksburg VA
N. Perry Cook - Fredericksburg VA

Assignee:

Virginia Semiconductor, Inc. - Fredericksburg VA

International Classification:

H01L 2176

US Classification:

438406

Abstract:

A technique of bonding a thin wafer layer to a substrate. The wafer is blown dry using an inert gas to prevent it from being damaged, while still ensuring that it dries completely. The initial bonding is done by orienting crystallographic axes, and then allowing the wafers to adhere to one another slowly. The contact wave is prevented from spreading, by a divider between the two wafers. The wafers are allowed to adhere to one another slowly to form a bond. The bond is strengthened by annealing.

US Patent:

63039427, Oct 16, 2001

Filed:

Mar 17, 1998

Appl. No.:

9/042974

Inventors:

Kenneth Rudolph Farmer - Dunellen NJ

International Classification:

H01L 2906

US Classification:

257 30

Abstract:

The present invention relates to a tunnel barrier and to uses thereof, particularly in conjunction with devices and integrated circuits fabricated with silicon substrates, and including the preparation of tunnel diodes, dielectric structures, transistors, memory cells and the products embodying one or more of the same. The tunnel barrier of the invention is designed to confer effective and reliable charge transfer performance, and is particularly well suited for the fabrication of nonvolatile memory cells. In an embodiment of the invention, with the barrier incorporated in a diode, the present evacuee facilitates over 10. sup. 9 bi-directional charge transfers across the barrier without destroying it. The multiple layer nature of the barrier, coupled with the use of direct tunnel oxides, provides desirable functionality, stability, and resistance to dielectric degradation, thus improving operating, storage and retention characteristics over conventional nonvolatile devices.