Kenneth E Sharp

US Patent:

6489386, Dec 3, 2002

Filed:

Aug 9, 2000

Appl. No.:

09/634288

Inventors:

Irene Greenwald Plotzker - Wilmington DE
Thomas Michael Ford - Greenville DE
Kenneth George Sharp - Landenberg PA
Samuel Tacitus DArcangelis - Randolph NJ

Assignee:

E. I. du Pont de Nemours and Company - Wilmington DE

International Classification:

C08K 509

US Classification:

524291, 524222

Abstract:

A polymer composition and method for reducing the permeability of gases through molded polymeric containers and films by incorporating into the polymer from which the container or film is formed an effective amount of a barrier-enhancing additive, such as monoesters of hydroxybenzoic acid and hydroxynaphthoic acid.

US Patent:

6096460, Aug 1, 2000

Filed:

Apr 20, 1999

Appl. No.:

9/294575

Inventors:

Roger Harquail French - Wilmington DE
Kenneth George Sharp - Landenberg PA

Assignee:

E. I. du Pont de Nemours and Company - Wilmington DE

International Classification:

G03F 900

US Classification:

430 5

Abstract:

Transmissive attenuated embedded phase shifter photomasks comprising at least one polymeric material, preferably an amorphous fluoropolymer or an amorphous fluoropolymer doped with a fluorine functionalized organosilane, and organosilicates, or combinations thereof, the polymeric material having: (a) an index of refraction (n) in a range from 1. 2 to 2. 0, preferably in the range from 1. 26 to 1. 8, at a selected lithographic wavelength below 400 nm; and (b) an extinction coefficient (k) in a range from 0. 04 to 0. 8, preferably in the range from 0. 06 to 0. 59 at the selected lithographic wavelength below 400 nm.

US Patent:

61746312, Jan 16, 2001

Filed:

Jan 18, 2000

Appl. No.:

9/484149

Inventors:

Roger Harquail French - Wilmington DE
Kenneth George Sharp - Landenberg PA

Assignee:

E. I. du Pont de Nemours and Company - Wilmington DE

International Classification:

G03F 900

US Classification:

430 5

Abstract:

Transmissive attenuated embedded phase shifter photomasks comprising at least one polymeric material, preferably an amorphous fluoropolymer or an amorphous fluoropolymer doped with a fluorine functionalized organosilane, and organosilicates, or combinations thereof, the polymeric material having: (a) an index of refraction (n) in a range from 1. 2 to 2. 0, preferably in the range from 1. 26 to 1. 8, at a selected lithographic wavelength below 400 nm; and (b) an extinction coefficient (k) in a range from 0. 04 to 0. 8, preferably in the range from 0. 06 to 0. 59 at the selected lithographic wavelength below 400 nm.

US Patent:

44778856, Oct 16, 1984

Filed:

Jan 18, 1982

Appl. No.:

6/340145

Inventors:

Kenneth P. Sharp - Palo Alto CA

Assignee:

Fairchild Camera & Instrument Corporation - Mountain CA

International Classification:

G11C 702
G11C 800

US Classification:

365204

Abstract:

Circuitry for rapidly discharging a row of RAM cells upon deselection of the word line. The word line switching transistor collector current is sensed and corresponding voltage level signals are applied to a second switching transistor between the bottom word line of the memory row and a large dump current source. The emitter of the second switching transistor is clamped at a level that will permit the switching transistor to turn on only when there is no emitter current through the word line switching transistor to thereby rapidly discharge the capacitive row of memory cells and therefore improve the operating speed of the memory.