Kenneth James Travis

US Patent:

58088539, Sep 15, 1998

Filed:

Apr 30, 1997

Appl. No.:

8/846930

Inventors:

Hormazdyar M. Dalal - Milton NY
Gene Joseph Gaudenzi - North Salem NY
Rebecca Y. Gorrell - Lagrangeville NY
Mark A. Takacs - Poughkeepsie NY
Kenneth J. Travis - Newburgh NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01G 4228

US Classification:

3613061

Abstract:

This invention is directed to a capacitor having a multilevel interconnection technology. At least one solder ball is reflowed and secured onto the capacitor. The solder ball is in electrical communication with the capacitor through a contact. On this reflowed solder ball a cap of low melting point metal is secured. This can be done in a number of ways. The preferred way is to positioning a mask over the solder ball such that a portion of the solder ball is exposed through openings in the mask. At least one layer of a low melting point metal is deposited on the exposed surface of the solder ball through the mask, and thereby forming a capacitor with a multilevel interconnect cap. The low melting point metal can interact with the surface of the solder ball to form a cap of an eutectic or a liquefied portion. The cap portion can then be joined to the object.

US Patent:

20030075805, Apr 24, 2003

Filed:

Oct 23, 2001

Appl. No.:

10/047475

Inventors:

Bruce Copeland - Wappingers Falls NY, US
Rebecca Gorrell - Lagrangeville NY, US
Donald Scheider - Poughquag NY, US
Mark Takacs - Poughkeepsie NY, US
Kenneth Travis - Newburgh NY, US
Peter Ulanmo - Hopewell Junction NY, US
Jun Wang - Poughkeepsie NY, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - ARMONK NY

International Classification:

H01L031/062
H01L031/113
H01L023/495
H01L029/40
H01L023/48
H01L023/52

US Classification:

257/766000

Abstract:

A corrosion resistant electrode structure for interconnecting a decoupling capacitor to a substrate is disclosed. In an exemplary embodiment of the invention, the electrode structure includes a first chromium layer formed upon the capacitor and a first nickel layer formed upon the first chromium layer. A noble metal conductive layer is then formed upon the first nickel layer and a second nickel layer is formed upon said noble metal conductive layer. The second nickel layer has a thickness which is greater than a thickness of the first nickel layer. A second chromium layer is then formed upon the nickel layer.