Keven Kaisheng Yu from San Jose, CA, age 68

Us Patents

Chamber Lid Heater Ring Assembly
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US Patent:

20120090784, Apr 19, 2012
Filed:

Oct 5, 2011
Appl. No.:

13/253627
Inventors:

Alan H. Ouye - San Mateo CA, US
Graeme Scott - Mountain View CA, US
Keven Kaisheng Yu - Union City CA, US
Michael N. Grimbergen - Redwood City CA, US
Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:

C23F 1/08
C23C 16/505
H05B 3/02
C23C 16/458
US Classification:

15634537, 118723 I, 219546
Abstract:

Embodiments of the invention generally provide a lid heater for a plasma processing chamber. In one embodiment, a lid heater assembly is provided that includes a thermally conductive base. The thermally conductive base has a planar ring shape defining an inner opening. The lid heater assembly further includes a heating element disposed on the thermally conductive base, and an insulated center core disposed across the inner opening of the thermally conductive base.

Methods For In-Situ Chamber Dry Clean In Photomask Plasma Etching Processing Chamber
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US Patent:

20130048606, Feb 28, 2013
Filed:

Aug 31, 2011
Appl. No.:

13/222088
Inventors:

Zhigang Mao - San Jose CA, US
Xiaoyi Chen - Foster City CA, US
Keven Yu - Union City CA, US
Michael Grimbergen - Redwood City CA, US
Amitabh Sabharwal - San Jose CA, US
Ajay Kumar - Cupertino CA, US
International Classification:

B08B 5/00
B08B 7/00
C23F 1/02
US Classification:

216 67
Abstract:

Embodiments of the invention include methods for in-situ chamber dry cleaning a plasma processing chamber utilized for photomask plasma fabrication process. In one embodiment, a method for in-situ chamber dry clean after photomask plasma etching includes performing an in-situ pre-cleaning process in a plasma processing chamber, supplying a pre-cleaning gas mixture including at least an oxygen containing gas into the plasma processing chamber while performing the in-situ pre-cleaning process, providing a substrate into the plasma processing chamber, performing an etching process on the substrate, removing the substrate from the substrate, and performing an in-situ post cleaning process by flowing a post cleaning gas mixture including at least an oxygen containing gas into the plasma processing chamber.

Method For Etching An Euv Reflective Multi-Material Layers Utilized To Form A Photomask
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US Patent:

20130092655, Apr 18, 2013
Filed:

Oct 11, 2012
Appl. No.:

13/649187
Inventors:

Keven Yu - Union City CA, US
Michael Grimbergen - Redwood City CA, US
Amitabh Sabharwal - San Jose CA, US
Ajay Kumar - Cupertino CA, US
International Classification:

B44C 1/22
US Classification:

216 41
Abstract:

A method and apparatus for etching photomasks are provided herein. In one embodiment, a forming gas use utilized to remove a mask layer utilized film stack having a multi-material layer having at least two different materials. In another embodiment, a method of etching a multi-material layer disposed on a photomask includes providing a film stack in an etching chamber, the film stack having a multi-material layer having at least two different materials disposed therein partially exposed through a patterned layer, providing a gas mixture including at least one fluorine containing gas and an oxygen containing gas in to a processing chamber, supplying a RF power in the gas mixture to form a plasma, and etching the multi-material layer through the patterned layer.

Method Of Silicon Etch For Trench Sidewall Smoothing
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US Patent:

20140057446, Feb 27, 2014
Filed:

Aug 22, 2013
Appl. No.:

13/973541
Inventors:

Keven YU - Union City CA, US
Ajay Kumar - Cupertino CA, US
International Classification:

H01L 21/3065
US Classification:

438710, 15634551, 15634548
Abstract:

Methods of silicon etch for trench sidewall smoothing are described. In one embodiment, a method involves smoothing a sidewall of a trench formed in a semiconductor wafer via plasma etching. The method includes directionally etching the semiconductor wafer with plasma generated from a fluorine gas to smooth the sidewall of the trench, the trench having a protective layer formed by plasma generated by a second process gas such as oxygen or a polymerization gas. In another embodiment, a method involves etching a semiconductor wafer to generate a trench having a smooth sidewall. The method includes plasma etching the semiconductor wafer with one or more first process gases including a fluorine gas, simultaneously performing deposition and plasma etching the semiconductor wafer with one or more second process gases including a fluorine gas and a polymerization gas mix, and performing deposition with one or more third process gases including a polymerization gas.

Inductively Coupled Plasma Reactor Having Rf Phase Control And Methods Of Use Thereof
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US Patent:

20100276391, Nov 4, 2010
Filed:

Mar 29, 2010
Appl. No.:

12/748519
Inventors:

MICHAEL N. GRIMBERGEN - Redwood City CA, US
KEVEN KAISHENG YU - Union City CA, US
ALAN HIROSHI OUYE - San Mateo CA, US
MADHAVI R. CHANDRACHOOD - Sunnyvale CA, US
VALENTIN N. TODOROW - Palo Alto CA, US
TOI YUE BECKY LEUNG - San Jose CA, US
RICHARD LEWINGTON - Hayward CA, US
DARIN BIVENS - San Mateo CA, US
RENEE KOCH - Brentwood CA, US
IBRAHIM M. IBRAHIM - San Jose CA, US
AMITABH SABHARWAL - San Jose CA, US
AJAY KUMAR - Cupertino CA, US
Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:

H05H 1/46
US Classification:

216 41, 216 67
Abstract:

Methods of operating inductively coupled plasma (ICP) reactors having ICP sources and substrate bias with phase control are provided herein. In some embodiments, a method of operating a first plasma reactor having a source RF generator inductively coupled to the first plasma reactor on one side of a substrate support surface of a substrate support within the first plasma reactor and a bias RF generator coupled to the substrate support on an opposing side of the substrate support surface, wherein the source RF generator and the bias RF generator provide respective RF signals at a common frequency may include selecting a desired value of a process parameter for a substrate to be processed; and adjusting the phase between respective RF signals provided by the source RF generator and the bias RF generator to a desired phase based upon a predetermined relationship between the process parameter and the phase.

Method For Etching Euv Material Layers Utilized To Form A Photomask
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US Patent:

20140154615, Jun 5, 2014
Filed:

Jan 25, 2013
Appl. No.:

13/750888
Inventors:

Keven Yu - Union City CA, US
Medhavi Chandrachood - Sunnyvale CA, US
Amitabh Sabharwal - San Jose CA, US
Ajay Kumar - Cupertino CA, US
International Classification:

G03F 1/00
US Classification:

430 5
Abstract:

A method and apparatus for etching photomasks are provided herein. In one embodiment, a method of etching an ARC layer or an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having an ARC layer or an absorber layer partially exposed through a patterned layer, providing a gas mixture including at least one fluorine containing gas in to a processing chamber, applying a source RF power to form a plasma from the gas mixture, applying a first type of RF bias power to the substrate for a first period of time, applying a second type of RF bias power away from the substrate for a second period of time, and etching the ARC layer or the absorber layer through the patterned layer in the presence of the plasma.