Kevin C Baucom

US Patent:

60711094, Jun 6, 2000

Filed:

Feb 24, 1999

Appl. No.:

9/256819

Inventors:

Robert M. Biefeld - Albuquerque NM
Andrew A. Allerman - Albuquerque NM
Kevin C. Baucom - Albuquerque NM

Assignee:

Sandia Corporation - Albuquerque NM

International Classification:

C23C 1618

US Classification:

42525534

Abstract:

A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al. sub. X In. sub. 1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525. degree. C. to produce Al. sub. x In. sub. 1-x Sb crystalline materials wherein x is greater than 0. 002 and less than one.

US Patent:

56256353, Apr 29, 1997

Filed:

Nov 28, 1994

Appl. No.:

8/345160

Inventors:

Steven R. Kurtz - Albuquerque NM
Robert M. Biefeld - Albuquerque NM
L. Ralph Dawson - Albuquerque NM
Arnold J. Howard - Albuquerque NM
Kevin C. Baucom - Albuquerque NM

Assignee:

Sandia Corporation

International Classification:

H01S 319

US Classification:

392 45

Abstract:

An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns.