Kevin R Brew

US Patent:

20180261764, Sep 13, 2018

Filed:

Mar 13, 2017

Appl. No.:

15/457433

Inventors:

- Armonk NY, US
Kevin W. Brew - White Plains NY, US
Joel P. de Souza - Putnam Valley NY, US
Seyoung Kim - White Plains NY, US
Ning Li - White Plains NY, US
Yun Seog Lee - White Plains NY, US
Devendra K. Sadana - Pleasantville NY, US

International Classification:

H01L 45/00
G11C 13/00
H01L 27/24

Abstract:

A three-terminal non-volatile multi-state memory device based on mobile ion induced electrical resistivity change is provided. The three-terminal non-volatile multi-state memory device-includes a substrate having a first electrode and a second electrode therein. The three-terminal non-volatile multi-state memory device further includes a mobile ion including resistor layer disposed over the first electrode, the second electrode, and part of the substrate. The three-terminal non-volatile multi-state memory device also includes a third electrode formed over the mobile ion including resistor layer. The three-terminal non-volatile multi-state memory device provides multi-level states determined by an electrical resistivity of the mobile ion including resistor layer which changes the electrical resistivity based on the mobile ton concentration in the material.