Ki Tae Kim

US Patent:

7020602, Mar 28, 2006

Filed:

Aug 21, 2000

Appl. No.:

09/642471

Inventors:

Ki S. Kim - Gaithersburg MD, US
Jiyul Yoo - Vienna VA, US

International Classification:

G10L 21/00
G06F 17/20

US Classification:

704 8

Abstract:

A domain name system includes a native language domain name registrar, which receives a native language domain name registration request. The native language domain name comprises at least one non-alphanumeric character not included in the allowable character set for domain name registration, i. e. , the English alphabets A through Z, the Arabic numbers 0 through 9 and the hyphen “-”. Each of the non-alphanumeric characters is converted to a string of alphanumeric characters to produce an alphanumeric domain name comprised of strings of alphanumeric characters uniquely representing the native language domain name being requested to be registered. The resulting alphanumeric domain name is registered with the domain name registration system, and is used in the domain name/IP address entry in the domain name server (DNS). An algorithm based conversion between each of the native language character and the corresponding alphanumeric character string is used to maintain a unique correspondence between a native language character and the corresponding alphanumeric character string. The same algorithm may be provided to the web browsers installed on the computer of a world-wide-web (WWW) user to convert native language domain names to the corresponding alphanumeric domain names, which are ultimately used for domain name lookup process during the respective WWW browse sessions.

US Patent:

55141757, May 7, 1996

Filed:

Nov 9, 1994

Appl. No.:

8/336762

Inventors:

Ki Ho Kim - West Orange NJ
Saul Liss - Paterson NJ
Bernard Liss - Paterson NJ

Assignee:

Cerebral Stimulation, Inc. - Paterson NJ

International Classification:

A61N 100
A61N 136
A61H 3904

US Classification:

607136

Abstract:

Described is a low voltage, multipoint auricular stimulator which is lightweight, portable and unobtrusive for use by a patient to reduce or eliminate sensations of pain and anxiety and for correcting other neural dysfunctions, and a treatment method incorporating the pain reducing and neural dysfunction correcting apparatus.

US Patent:

52647110, Nov 23, 1993

Filed:

Sep 15, 1992

Appl. No.:

7/945040

Inventors:

Mitra Dutta - Matawan NJ
Harold L. Grubin - West Hartford CT
Gerald J. Iafrate - Raleigh NC
Ki Wook Kim - Durham NC
Michael A. Stroscio - Durham NC

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H01L 2902

US Classification:

257 14

Abstract:

A polar semiconductor quantum wire for use in electronic and opto-electronic devices. The polar semiconductor quantum wire is either completely or partially encapsulated in metal to reduce the strength of the scattering potential associated with interface optical phonons normally established at the lateral boundaries of polar semiconductor quantum wires. Metal alone or metal employed in conjunction with modulation doping enhances the transport of charge carriers within the polar semiconductor quantum wire.

US Patent:

53748310, Dec 20, 1994

Filed:

Apr 14, 1993

Appl. No.:

8/051105

Inventors:

Mitra Dutta - Matawan NJ
Gerald J. Iafrate - Raleigh NC
Ki W. Kim - Durham NC
Michael A. Stroscio - Durham NC

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H01L 29225

US Classification:

257 23

Abstract:

A phonon modulator which includes a semiconductor body having at least first and second polar semiconductor quantum wells formed therein separated by a polar semiconductor barrier. The conduction band energies of the wells and barrier are selected such that the lowest energy electronic states in the two wells are separated by an energy which is greater than the energies of optical phonons in the well and barrier materials. Respective voltages are applied to the wells which are less than the optical phonon emission threshold in the well and barrier materials to generate respective currents therein. Increasing the voltage to the first well to a level in excess of such optical phonon emission threshold causes optical phonons to be emitted from the first well to create a standing interface mode from the first well through the barrier to the second well, thereby providing a scattering mechanism for electrons in the second well and reducing the current thereof.

US Patent:

59171944, Jun 29, 1999

Filed:

Jul 17, 1996

Appl. No.:

8/684766

Inventors:

Mitra Dutta - Silver Spring MD
Michael A. Stroscio - Durham NC
Gerald J. Iafrate - Raleigh NC
Ki Wook Kim - Durham NC
Yuri M. Sirenko - Raleigh NC

Assignee:

The United States of America as represented by the Secretary of the Army - Washington DC

International Classification:

H01L 310352
H01L 29775

US Classification:

257 17

Abstract:

A mesoscopic structure is fabricated such that the desired dominant modes of the acoustic phonons in the structure have wavelengths such that the length of a half-integral number of wavelengths equals the length of the structure through which the desired electron wave is propagating. A manner of achieving this object is to provide for a material in a quantum wire and a material at the end of the quantum wire such that the two materials have such different properties (as disclosed hereinafter) to abruptly dampen the phonon modes at the interface between the two materials. With such an interface, a clamped boundary condition will occur and the modes of amplitude can be assumed to vanish at the interface. Such a case applies at some metal-semiconductor interfaces. In particular, for a mesoscopic device having wire-like regions which terminate on a variety of metal regions (regions used as contacts, gates, barriers, etc.