Kin Leung Lo

US Patent:

7655571, Feb 2, 2010

Filed:

Oct 26, 2006

Appl. No.:

11/553132

Inventors:

Mark Naoshi Kawaguchi - Sunnyvale CA, US
Kin Pong Lo - Fremont CA, US
Brett Christian Hoogensen - Los Gatos CA, US
Sandy M. Wen - San Jose CA, US
Steven M. Kim - Union City CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/302

US Classification:

438706, 438714, 216 67

Abstract:

A method and apparatus for removing volatile residues from a substrate are provided. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, treating a substrate in the processing chamber with a chemistry comprising halogen, and removing volatile residues from the treated substrate in the load lock chamber.

US Patent:

8313578, Nov 20, 2012

Filed:

Nov 23, 2009

Appl. No.:

12/624155

Inventors:

James D. Carducci - Sunnyvale CA, US
Kin Pong Lo - Fremont CA, US
Kallol Bera - San Jose CA, US
Michael C. Kutney - Santa Clara CA, US
Matthew L. Miller - Fremont CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/52
C23C 16/455

US Classification:

118715, 1563451

Abstract:

A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.

US Patent:

20090014324, Jan 15, 2009

Filed:

Aug 29, 2008

Appl. No.:

12/201170

Inventors:

Mark Naoshi Kawaguchi - Sunnyvale CA, US
Kin Pong Lo - Fremont CA, US
Brett Christian Hoogensen - Los Gatos CA, US
Sandy M. Wen - San Jose CA, US
Steven H. Kim - Union City CA, US

International Classification:

C23C 14/00

US Classification:

20429835

Abstract:

A method and apparatus for removing volatile residues from a substrate are provided. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, treating a substrate in the processing chamber with a chemistry comprising halogen, and removing volatile residues from the treated substrate in the load lock chamber.

US Patent:

20090188625, Jul 30, 2009

Filed:

Jan 28, 2008

Appl. No.:

12/020696

Inventors:

JAMES D. CARDUCCI - Sunnyvale CA, US
KIN PONG LO - Fremont CA, US
KALLOL BERA - San Jose CA, US

International Classification:

H01L 21/306

US Classification:

15634534, 1563451

Abstract:

A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.

US Patent:

20130019583, Jan 24, 2013

Filed:

May 10, 2012

Appl. No.:

13/468157

Inventors:

Kin Pong Lo - Fremont CA, US
John K. Eaton - Stanford CA, US

International Classification:

F02C 6/04
B05B 1/26

US Classification:

60 395, 239601

Abstract:

A diffuser () expanding a gas flow (F) upstream of a heat recovery steam generator () of a combined cycle power plant (). An outer wall () of the diffuser includes a smoothly lofted backward facing step () effective to fix a location of a flow recirculation bubble () under conditions conducive to flow separation. The step has a varying step height (H, H) about a circumference of the step edge (). The varying step height segments the recirculation bubble into small cells () located downstream of each peak () of the step height and reducing a reattachment length (L) of the bubble, thereby facilitating a reduction of the overall length of the diffuser.

US Patent:

20200111659, Apr 9, 2020

Filed:

Oct 4, 2018

Appl. No.:

16/152395

Inventors:

- Santa Clara CA, US
Theresa Kramer GUARINI - San Jose CA, US
Linlin WANG - Fremont CA, US
Malcolm BEVAN - Santa Clara CA, US
Johanes S. SWENBERG - Los Gatos CA, US
Vladimir NAGORNY - Tracy CA, US
Bernard L. HWANG - Santa Clara CA, US
Kin Pong LO - Fremont CA, US
Lara HAWRYLCHAK - Gilroy CA, US
Rene GEORGE - San Carlos CA, US

International Classification:

H01L 21/02

Abstract:

A method of modifying a layer in a semiconductor device is provided. The method includes depositing a low quality film on a semiconductor substrate, and exposing a surface of the low quality film to a first process gas comprising helium while the substrate is heated to a first temperature, and exposing a surface of the low quality film to a second process gas comprising oxygen gas while the substrate is heated to a second temperature that is different than the first temperature. The electrical properties of the film are improved by undergoing the aforementioned processes.

US Patent:

20190062904, Feb 28, 2019

Filed:

Aug 30, 2018

Appl. No.:

16/117011

Inventors:

- Santa Clara CA, US
Kin Pong LO - Fremont CA, US
Errol C. SANCHEZ - Tracy CA, US

International Classification:

C23C 16/02
C30B 25/10
C30B 33/02
C23C 16/54
C23C 16/56
C23C 16/24
C23C 16/30
C30B 29/06
C30B 29/52
H01L 21/67
H01L 21/02
H01J 37/32
B08B 7/00

Abstract:

Implementations of the present disclosure generally relate to an improved vacuum processing system. In one implementation, the vacuum processing system includes a first transfer chamber coupling to at least one vapor phase epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a plasma-cleaning chamber coupled to the first or second transfer chamber for removing contaminants from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber.

US Patent:

20190066998, Feb 28, 2019

Filed:

Aug 10, 2018

Appl. No.:

16/100399

Inventors:

- Santa Clara CA, US
Schubert S. CHU - San Francisco CA, US
Tushar MANDREKAR - San Jose CA, US
Errol C. SANCHEZ - Tracy CA, US
Kin Pong LO - Fremont CA, US

International Classification:

H01L 21/02
C30B 25/02
C23C 16/02
B08B 7/00
H01J 37/32

Abstract:

Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.