Kin Man Lo

US Patent:

20130019583, Jan 24, 2013

Filed:

May 10, 2012

Appl. No.:

13/468157

Inventors:

Kin Pong Lo - Fremont CA, US
John K. Eaton - Stanford CA, US

International Classification:

F02C 6/04
B05B 1/26

US Classification:

60 395, 239601

Abstract:

A diffuser () expanding a gas flow (F) upstream of a heat recovery steam generator () of a combined cycle power plant (). An outer wall () of the diffuser includes a smoothly lofted backward facing step () effective to fix a location of a flow recirculation bubble () under conditions conducive to flow separation. The step has a varying step height (H, H) about a circumference of the step edge (). The varying step height segments the recirculation bubble into small cells () located downstream of each peak () of the step height and reducing a reattachment length (L) of the bubble, thereby facilitating a reduction of the overall length of the diffuser.

US Patent:

20190062904, Feb 28, 2019

Filed:

Aug 30, 2018

Appl. No.:

16/117011

Inventors:

- Santa Clara CA, US
Kin Pong LO - Fremont CA, US
Errol C. SANCHEZ - Tracy CA, US

International Classification:

C23C 16/02
C30B 25/10
C30B 33/02
C23C 16/54
C23C 16/56
C23C 16/24
C23C 16/30
C30B 29/06
C30B 29/52
H01L 21/67
H01L 21/02
H01J 37/32
B08B 7/00

Abstract:

Implementations of the present disclosure generally relate to an improved vacuum processing system. In one implementation, the vacuum processing system includes a first transfer chamber coupling to at least one vapor phase epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a plasma-cleaning chamber coupled to the first or second transfer chamber for removing contaminants from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber.

US Patent:

20190066998, Feb 28, 2019

Filed:

Aug 10, 2018

Appl. No.:

16/100399

Inventors:

- Santa Clara CA, US
Schubert S. CHU - San Francisco CA, US
Tushar MANDREKAR - San Jose CA, US
Errol C. SANCHEZ - Tracy CA, US
Kin Pong LO - Fremont CA, US

International Classification:

H01L 21/02
C30B 25/02
C23C 16/02
B08B 7/00
H01J 37/32

Abstract:

Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

US Patent:

20190067006, Feb 28, 2019

Filed:

Aug 7, 2018

Appl. No.:

16/057213

Inventors:

- Santa Clara CA, US
Kin Pong LO - Fremont CA, US
Errol C. SANCHEZ - Tracy CA, US
Schubert S. CHU - San Francisco CA, US
Tushar MANDREKAR - San Jose CA, US

International Classification:

H01L 21/02
C30B 25/02
C23C 16/02
B08B 7/00
H01L 21/67
H01J 37/32

Abstract:

In one implementation, a processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma chamber for removing contaminants from the surface of the substrate.

US Patent:

20150368830, Dec 24, 2015

Filed:

Jun 12, 2015

Appl. No.:

14/737974

Inventors:

- Santa Clara CA, US
Kin Pong LO - Fremont CA, US
Edric TONG - Sunnyvale CA, US
Satheesh KUPPURAO - San Jose CA, US
Balasubramanian RAMACHANDRAN - Santa Clara CA, US

International Classification:

C30B 25/14
C30B 25/08

Abstract:

Embodiments of the disclosure relate to a one-piece injector assembly. The injector assembly includes a plurality of channels for introducing process gas into a processing chamber while keeping the gas flow of each channel separate from the gas flow in each other channel. In addition, embodiments of the disclosure relate to upper and lower liners accommodating the one-piece injector assembly, methods for installing the injector assembly, and a processing chamber utilizing the one-piece injector assembly.