Kiran V Thadani

US Patent:

20110266252, Nov 3, 2011

Filed:

Jul 20, 2010

Appl. No.:

12/839651

Inventors:

Kiran V. Thadani - Sunnyvale CA, US
Jing Tang - Santa Clara CA, US
Nitin Ingle - San Jose CA, US
Dongqing Yang - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05K 3/00
C23F 1/02

US Classification:

216 17, 216 67

Abstract:

Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate.

US Patent:

20140073144, Mar 13, 2014

Filed:

Nov 5, 2012

Appl. No.:

13/668657

Inventors:

Abhijit Basu Mallick - Palo Alto CA, US
Nitin K. Ingle - San Jose CA, US
Brian Underwood - Santa Clara CA, US
Kiran V. Thadani - Sunnyvale CA, US
Xiaolin Chen - San Ramon CA, US
Abhishek Dube - Belmont CA, US
Jingmei Liang - San Jose CA, US

International Classification:

H01L 21/02

US Classification:

438793, 438778

Abstract:

A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N), argon, hydrogen (H) and/or oxygen (O). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200 C. when a local plasma is excited using relatively low power.

US Patent:

20160181089, Jun 23, 2016

Filed:

Nov 30, 2015

Appl. No.:

14/954634

Inventors:

- Santa Clara CA, US
Kiran V. THADANI - Sunnyvale CA, US
Jessica S. KACHIAN - Sunnyvale CA, US
Nagarajan RAJAGOPALAN - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/02

Abstract:

A method of reducing line bending and surface roughness of a substrate with pillars includes forming a treated surface by treating a pillar-containing substrate with a radical. The radical may be silicon-based, nitrogen-based or oxygen-based. The method may include forming a dielectric film over the treated surface by reacting an organosilicon precursor and an oxygen precursor. The method may include curing the dielectric film at a temperature of about 150 C. or less. A method of reducing line bending and surface roughness of a substrate with pillars includes forming a dielectric film over a pillar-containing substrate by reacting an organosilicon precursor, an oxygen precursor, and a radical precursor. The method may include curing the dielectric film at a temperature of about 150 C. or less. The radical precursor may be selected from the group consisting of nitrogen-based radical precursor, oxygen-based radical precursor, and silicon-based radical precursor.

US Patent:

20160049331, Feb 18, 2016

Filed:

Oct 27, 2015

Appl. No.:

14/923957

Inventors:

- Santa Clara CA, US
Abhijit Basu MALLICK - Fremont CA, US
Kiran V. THADANI - Sunnyvale CA, US
Zhenjiang CUI - San Jose CA, US

International Classification:

H01L 21/768

Abstract:

Embodiments of the present invention generally relate to methods for forming a metal structure and passivation layers. In one embodiment, metal columns are formed on a substrate. The metal columns are doped with manganese, aluminum, zirconium, or hafnium. A dielectric material is deposited over and between the metal columns and then cured to form a passivation layer on vertical surfaces of the metal columns.

US Patent:

20150214039, Jul 30, 2015

Filed:

Jan 6, 2015

Appl. No.:

14/590624

Inventors:

- Santa Clara CA, US
Kiran V. THADANI - Sunnyvale CA, US
Abhijit Basu MALLICK - Fremont CA, US

International Classification:

H01L 21/02

Abstract:

Implementations described herein generally relate to methods for dielectric gap-fill. In one implementation, a method of depositing a silicon oxide layer on a substrate is provided. The method comprises introducing a cyclic organic siloxane precursor and an aliphatic organic siloxane precursor into a deposition chamber, reacting the cyclic organic siloxane precursor and the aliphatic organic siloxane precursor with atomic oxygen to form the silicon oxide layer on a substrate positioned in the deposition chamber, wherein the substrate is maintained at a temperature between about 0 C. and about 200 C. as the silicon oxide layer is formed, wherein the silicon oxide layer is initially flowable following deposition, and wherein a ratio of a flow rate of the cyclic organic siloxane precursor to a flow rate of the aliphatic organic siloxane precursor is at least 2:1 and curing the deposited silicon oxide layer.

US Patent:

20150196933, Jul 16, 2015

Filed:

Dec 17, 2014

Appl. No.:

14/574101

Inventors:

- Santa Clara CA, US
Kiran V. THADANI - Sunnyvale CA, US
Abhijit Basu MALLICK - Fremont CA, US

International Classification:

B05D 3/06
B05D 3/02
B05D 3/04

Abstract:

Embodiments of the invention generally relate to methods of curing a carbon/silicon-containing low k material. The methods generally include delivering a deposition precursor to the processing region, the deposition precursor comprising a carbon/silicon-containing precursor, forming a remote plasma in the presence of an oxygen containing precursor, delivering the activated oxygen containing precursor to the deposition precursor to deposit a carbon/silicon-containing low k material on the substrate and curing the carbon/silicon-containing low k material in the presence of a carbon oxide gas.

US Patent:

20140273430, Sep 18, 2014

Filed:

Feb 13, 2014

Appl. No.:

14/180098

Inventors:

- Santa Clara CA, US
Abhijit Basu Mallick - Fremont CA, US
Kiran V. Thadani - Sunnyvale CA, US
Zhenjiang Cui - San Jose CA, US

International Classification:

H01L 21/768
H01L 21/56

US Classification:

438613

Abstract:

Embodiments of the present invention generally relate to methods for forming a metal structure and passivation layers. In one embodiment, metal columns are formed on a substrate. The metal columns are doped with manganese, aluminum, zirconium, or hafnium. A dielectric material is deposited over and between the metal columns and then cured to form a passivation layer on vertical surfaces of the metal columns.

US Patent:

20140091417, Apr 3, 2014

Filed:

Sep 28, 2013

Appl. No.:

14/040624

Inventors:

- Santa Clara CA, US
Martin SEAMONS - San Jose CA, US
Kiran V. THADANI - Sunnyvale CA, US
Abhijit MALLICK - Fremont CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C09D 5/00
H01L 31/18
H01L 31/0232

US Classification:

257432, 10628728, 257431, 438 69

Abstract:

A method of depositing a low refractive index coating on a photo-active feature on a substrate comprises forming a substrate having one or more photo-active features thereon and placing the substrate in a process zone. A deposition gas is energized in a remote gas energizer, the deposition gas comprising a fluorocarbon gas and an additive gas. The remotely energized deposition gas is flowed into the process zone to deposit a low refractive index coating on the substrate.