Kristi Jean Narang

US Patent:

7009215, Mar 7, 2006

Filed:

Oct 24, 2003

Appl. No.:

10/693803

Inventors:

Mark Philip D'Evelyn - Niskayuna NY, US
Xian-An Cao - Clifton Park NY, US
Anping Zhang - Niskayuna NY, US
Steven Francis LeBoeuf - Schenectady NY, US
Huicong Hong - Niskayuna NY, US
Kristi Jean Narang - Voorheesville NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

H01L 33/00

US Classification:

257 98, 257 99, 257100, 257102, 257103, 372 98, 372 99

Abstract:

In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal () and a source material () are arranged in a nitrogen-containing superheated fluid () disposed in a sealed container () disposed in a multiple-zone furnace (). Gallium nitride material is grown on the seed gallium nitride crystal () to produce a single-crystal gallium nitride substrate (′). Said growing includes applying a temporally varying thermal gradient (′) between the seed gallium nitride crystal () and the source material () to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers () is deposited on the single-crystal gallium nitride substrate (′), including a first mirror sub-stack () and an active region () adapted for fabrication into one or more resonant cavity light emitting devices ().

US Patent:

7098487, Aug 29, 2006

Filed:

Dec 27, 2002

Appl. No.:

10/329981

Inventors:

Mark Philip D'Evelyn - Niskayuna NY, US
Steven LeBoeuf - Schenectady NY, US
Larry Rowland - Scotia NY, US
Kristi Narang - Voorheesville NY, US
Huicong Hong - Niskayuna NY, US
Peter M. Sandvik - Guilderland NY, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

H01L 33/00

US Classification:

257103, 257 22, 257 64, 257613

Abstract:

There is provided a GaN single crystal at least about 2 millimeters in diameter, with a dislocation density less than about 10cm, and having no tilt boundaries. A method of forming a GaN single crystal is also disclosed. The method includes providing a nucleation center, a GaN source material, and a GaN solvent in a chamber. The chamber is pressurized. First and second temperature distributions are generated in the chamber such that the solvent is supersaturated in the nucleation region of the chamber. The first and second temperature distributions have different temperature gradients within the chamber.

US Patent:

7101433, Sep 5, 2006

Filed:

Oct 31, 2003

Appl. No.:

10/699504

Inventors:

Mark P. D'Evelyn - Niskayuna NY, US
Peter S. Allison - Conroe TX, US
Kristi J. Narang - Voorheesville NY, US
Robert A. Giddings - Slingerlands NY, US

Assignee:

General Electric Company - Schenectady NY

International Classification:

C30B 29/40

US Classification:

117 69, 117 68, 117201, 117929, 423446

Abstract:

A high temperature/high pressure (HP/HT) apparatus for converting feedstock housed in a capsule into product crystals, comprising at least two electrical heating paths for independent control of both the mean temperature in the reaction cell and the temperature gradient across the reaction cell.

US Patent:

7125453, Oct 24, 2006

Filed:

Jan 31, 2002

Appl. No.:

09/683659

Inventors:

Mark Philip D'Evelyn - Niskayuna NY, US
Kristi Jean Narang - Voorheesville NY, US
Robert Arthur Giddings - Slingerlands NY, US
Steven Alfred Tysoe - Ballston Spa NY, US
John William Lucek - Powell OH, US
Suresh Shankarappa Vagarali - Columbus OH, US
Joel Rice Dysart - Johnstown OH, US

Assignee:

General Electric Company - Niskayuna NY

International Classification:

C30B 7/10

US Classification:

117200, 117206, 117223

Abstract:

A capsule for containing at least one reactant and a supercritical fluid in a substantially air-free environment under high pressure, high temperature processing conditions. The capsule includes a closed end, at least one wall adjoining the closed end and extending from the closed end; and a sealed end adjoining the at least one wall opposite the closed end. The at least one wall, closed end, and sealed end define a chamber therein for containing the reactant and a solvent that becomes a supercritical fluid at high temperatures and high pressures. The capsule is formed from a deformable material and is fluid impermeable and chemically inert with respect to the reactant and the supercritical fluid under processing conditions, which are generally above 5 kbar and 550 C. and, preferably, at pressures between 5 kbar and 80 kbar and temperatures between 550 C. and about 1500 C.

US Patent:

7582498, Sep 1, 2009

Filed:

Dec 6, 2005

Appl. No.:

11/295627

Inventors:

Mark Philip D'Evelyn - Niskayuna NY, US
Xian-An Cao - New Paltz NY, US
Anping Zhang - Niskayuna NY, US
Steven Francis LeBoeuf - Schenectady NY, US
Huicong Hong - Niskayuna NY, US
Kristi Jean Narang - Voorheesville NY, US

Assignee:

Momentive Performance Materials Inc. - Albany NY

International Classification:

H01L 21/00
C30B 15/00

US Classification:

438 46, 438 47, 257E21117, 117216

Abstract:

A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.

US Patent:

7625446, Dec 1, 2009

Filed:

Dec 10, 2004

Appl. No.:

11/010139

Inventors:

Mark Philip D'Evelyn - Niskayuna NY, US
Kristi Jean Narang - Voorheesville NY, US
Robert Arthur Giddings - Slingerlands NY, US
Steven Alfred Tysoe - Ballston Spa NY, US
John William Lucek - Powell OH, US
Suresh Shankarappa Vagarali - Columbus OH, US
Joel Rice Dysart - Johnstown OH, US

Assignee:

Momentive Performance Materials Inc. - Albany NY

International Classification:

C30B 11/00
C30B 28/10
C30B 15/26

US Classification:

117 11, 117201, 117220, 117 31, 117 34

Abstract:

A capsule for containing at least one reactant and a supercritical fluid in a substantially air-free environment under high pressure, high temperature processing conditions. The capsule includes a closed end, at least one wall adjoining the closed end and extending from the closed end; and a sealed end adjoining the at least one wall opposite the closed end. The at least one wall, closed end, and sealed end define a chamber therein for containing the reactant and a solvent that becomes a supercritical fluid at high temperatures and high pressures. The capsule is formed from a deformable material and is fluid impermeable and chemically inert with respect to the reactant and the supercritical fluid under processing conditions, which are generally above 5 kbar and 550 C. and, preferably, at pressures between 5 kbar and 80 kbar and temperatures between 550 C. and about 1500 C.

US Patent:

7638815, Dec 29, 2009

Filed:

Jan 9, 2007

Appl. No.:

11/621560

Inventors:

Mark Philip D'Evelyn - Niskayuna NY, US
Steven Francis LeBoeuf - Schenectady NY, US
Larry Burton Rowland - Scotia NY, US
Kristi Jean Narang - Voorheesville NY, US
Huicong Hong - Niskayuna NY, US
Stephen Daley Arthur - Glenville NY, US
Peter Micah Sandvik - Clifton Park NY, US

Assignee:

Momentive Performance Materials Inc. - Albany NY

International Classification:

H01L 33/00

US Classification:

257103, 257 80, 257101, 257200, 257E31058

Abstract:

A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm, with an absorbance per unit thickness of greater than about 0. 01 cm.

US Patent:

7642122, Jan 5, 2010

Filed:

Oct 5, 2007

Appl. No.:

11/973182

Inventors:

Steven Alfred Tysoe - Ballston Spa NY, US
John Thomas Leman - Niskayuna NY, US
Mark Philip D'Evelyn - Niskayuna NY, US
Kristi Jean Narang - Voorheesville NY, US
Huicong Hong - Niskayuna NY, US

Assignee:

Momentive Performance Materials Inc. - Albany NY

International Classification:

H01L 21/00
H01L 33/00

US Classification:

438 95, 257 98

Abstract:

A method for growing a nitride crystal and a crystalline composition selected from one of AlN, InGaN, AlGaInN, InGaN, and AlGaNInN is provided. The composition comprises a true single crystal, grown from a single nucleus, at least 1 mm in diameter, free of lateral strain and tilt boundaries, with a dislocation density less than about 10cm.