Kristin F Schmidt

US Patent:

20200243335, Jul 30, 2020

Filed:

Jan 25, 2019

Appl. No.:

16/258347

Inventors:

- Armonk NY, US
Kristin Schmidt - Mountain View CA, US
Yann Mignot - Slingerlands NY, US
Martha Inez Sanchez - Menlo Park CA, US
Daniel Paul Sanders - San Jose CA, US
Nelson Felix - Slingerlands NY, US
Ekmini Anuja De Silva - Slingerlands NY, US

International Classification:

H01L 21/033
H01L 21/311
H01L 21/3105
H01L 21/02

Abstract:

A plurality of mandrels and silicon dioxide spacer structures are formed, with the spacer structures interdigitated between the mandrels. An organic planarization layer is applied, as are a thin oxide layer and a layer of photoresist patterned in hole tone over the oxide layer, thereby defining a domain. At least one hole is etched in the thin oxide layer and the organic planarization layer to expose a portion of a hard mask layer surface between the spacer structures. A selective polymer brush is applied, which grafts only to the exposed hard mask surface, followed by solvent rinsing the domain to remove ungrafted polymer brush. At least one precursor is infused to an etch resistant material into the polymer brush by a sequential infiltration synthesis process. The organic planarization layer is ashed to convert the infused precursor into oxide form to further enhance etch selectivity to the hard mask layer.

US Patent:

20190221428, Jul 18, 2019

Filed:

Jan 15, 2018

Appl. No.:

15/871499

Inventors:

- Armonk NY, US
Sivananda K. Kanakasabapathy - Pleasanton CA, US
Kafai Lai - Poughkeepsie NY, US
Chi-Chun Liu - Altamont NY, US
Kristin Schmidt - Mountain View CA, US
Ankit Vora - San Jose CA, US

International Classification:

H01L 21/033
G03F 7/00
G03F 7/004
G03F 7/038
G03F 7/16

Abstract:

Lithographic patterning methods are provided which implement directed self-assembly (DSA) of block copolymers to enable self-aligned cutting of features. A first layer and second layer of material are formed on a substrate. The second layer of material is lithographically patterning to form a guiding pattern. A DSA process is performed to form a block copolymer pattern around the guiding pattern, which comprises a repeating block chain that includes at least a first block material and a second block material, which have etch selectivity with respect to each other. A selective etch process is performed to selectively etching one of the first block material and the second block material to form self-aligned openings in the block copolymer pattern which expose portions of the first layer of material. The first layer of material is patterned by etching the exposed portions of the first layer of material.

US Patent:

20170294341, Oct 12, 2017

Filed:

Apr 7, 2016

Appl. No.:

15/092693

Inventors:

- Armonk NY, US
Teddie P. Magbitang - San Jose CA, US
Daniel P. Sanders - San Jose CA, US
Kristin Schmidt - Mountain View CA, US
Ankit Vora - San Jose CA, US

International Classification:

H01L 21/768
C23F 1/00
C08G 81/02

Abstract:

High-chi diblock copolymers are disclosed whose self-assembly properties are suitable for forming hole and bar openings for conductive interconnects in a multi-layered structure. The hole and bar openings have reduced critical dimension, improved uniformity, and improved placement error compared to the industry standard poly(styrene)-b-poly(methyl methacrylate) block copolymer (PS-b-PMMA). The BCPs comprise a poly(styrene) block, which can optionally include repeat units derived from trimethylsilyl styrene, and a second block that can be a polycarbonate block or a polyester block. Block copolymers comprising a fluorinated linking group L′ comprising 1-25 fluorines between the blocks can provide further improvement in uniformity of the openings.

US Patent:

20170233532, Aug 17, 2017

Filed:

Feb 11, 2016

Appl. No.:

15/041095

Inventors:

- Armonk NY, US
Teddie P. Magbitang - San Jose CA, US
Daniel P. Sanders - San Jose CA, US
Kristin Schmidt - Mountain View CA, US
Ankit Vora - San Jose CA, US

International Classification:

C08G 81/02
H01J 37/32
B05D 7/00
B05D 3/02
C09D 169/00
G03F 7/00

Abstract:

A high-chi diblock copolymer (BCP) for self-assembly comprises a first block comprising repeat units of trimethylsilyl styrene (TMSS) and styrene, and a second block comprising an aliphatic carbonate repeat unit. The blocks are linked together by a fluorinated junction group L′ in which none of the fluorines of L′ are covalently bound to an atomic center of the polymer backbone. A top-coat free film layer comprising the BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented lamellar domain pattern on an underlayer that is preferential or non-preferential to the domains of the block copolymer. The domain pattern can be selectively etched to provide a relief pattern comprising a remaining domain. The relief pattern having good critical dimensional uniformity compared to an otherwise identical polymer lacking the silicon.

US Patent:

20170114246, Apr 27, 2017

Filed:

Oct 21, 2015

Appl. No.:

14/919070

Inventors:

- Armonk NY, US
Joy Cheng - Taipei City, TW
Teddie P. Magbitang - San Jose CA, US
Jed W. Pitera - Portola Valley CA, US
Daniel P. Sanders - San Jose CA, US
Kristin Schmidt - Mountain View CA, US
Hoa D. Truong - San Jose CA, US
Ankit Vora - San Jose CA, US

International Classification:

C09D 169/00
C08J 7/04
C09D 167/04
C08G 63/64
C08G 63/08

Abstract:

Block copolymers (BCPs) for self-assembly applications comprise a linear fluorinated linking group L′ joining a pair of adjacent blocks. A film layer comprising a BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented domain pattern when the underlayer is preferentially wetted by one domain of an otherwise identical self-assembled BCP in which all fluorines of L′ are replaced by hydrogen. The BCP can be a low-chi or high-chi BCP. In a preferred embodiment, the BCP comprises a styrene-based first block, and a second block comprises a carbonate and/or ester repeat unit formed by ring opening polymerization of a cyclic carbonate and/or cyclic ester monomer. The linking group L′ has a lower surface energy than each of the polymer blocks.