Lee A Burns

US Patent:

6811040, Nov 2, 2004

Filed:

Jul 9, 2002

Appl. No.:

10/191192

Inventors:

Thomas Payne - Charlton MA
Jitendra S. Goela - Andover MA
Lee E. Burns - Winchester MA
Michael A. Pickering - Dracut MA

Assignee:

Rohm and Haas Company - Philadelphia PA

International Classification:

A47G 1908

US Classification:

211 4118, 211183, 206832

Abstract:

A wafer holding apparatus composed of a plurality of rods joined at opposite ends by endplates. Each rod at each end is secured to the endplates by a mechanical dovetail joint. The dovetail joint secures the rods to the endplates without the need for sealing or coating agents. Also, auxiliary mechanical components such as nuts and bolts to secure the joint components need not be employed to secure the joint. Each rod has multiple grooves or slits for placing multiple semiconductor wafers that are to be processed in processing chambers. The wafer holding apparatus is oxidation resistant, chemical resistant and thermal shock resistant.

US Patent:

8594812, Nov 26, 2013

Filed:

Jul 27, 2012

Appl. No.:

13/559632

Inventors:

Peter F Meyer - Shrewsbury MA, US
Lee C Burns - Franklin MA, US
Scott R Coggins - Littleton MA, US
David M Selvitelli - Suffield CT, US

Assignee:

Covidien LP - Mansfield MA

International Classification:

A61N 1/04

US Classification:

607152, 607 5, 607 10, 607142

Abstract:

An electrode pad packaging system including an electrode pouch, an electrode pad (e. g. , a defibrillation electrode pad), a wire and a shell is disclosed. The electrode pad is disposed at least partially within the electrode pouch. The wire extends from the electrode pad and, in a disclosed embodiment, at least a portion of the wire is attached to the shell. The shell is disposed in mechanical cooperation with the electrode pouch (e. g. , the shell is secured to a portion of the electrode pouch). The shell includes a valve thereon that is configured to allow air to exit the electrode pouch. The valve may be configured to prevent air from entering the electrode pouch. A method of packaging an electrode pad is also disclosed. The method includes providing an electrode pouch, an electrode pad, a wire and a shell. A valve on the shell allows air to exit the electrode pouch.

US Patent:

51836890, Feb 2, 1993

Filed:

Jul 15, 1991

Appl. No.:

7/729980

Inventors:

Raymond L. Taylor - Saugus MA
Lee E. Burns - Woburn MA
James C. MacDonald - Reading MA

Assignee:

CVD, Inc. - Woburn MA

International Classification:

C23C 1600
C23C 1622

US Classification:

427164

Abstract:

The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.

US Patent:

53744128, Dec 20, 1994

Filed:

Oct 13, 1992

Appl. No.:

7/959880

Inventors:

Michael A. Pickering - Dracut MA
Jitendra S. Goela - Andover MA
Lee E. Burns - Woburn MA

Assignee:

CVD, Inc. - Woburn MA

International Classification:

C01B 3136

US Classification:

423346

Abstract:

Silicon carbide is produced by chemical vapor deposition at temperatures from 1340. degree. -1380. degree. C. , deposition chamber pressures of 180-200 torr, H. sub. 2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2. mu. m/min. Furthermore, H. sub. 2 supplied as a part of the gas stream contains less than about 1 part per million (ppm) O. sub. 2 gas, and various means are provided to exclude particulate material from the deposition chamber. The silicon carbide is polishable to

US Patent:

54765498, Dec 19, 1995

Filed:

Feb 24, 1995

Appl. No.:

8/393770

Inventors:

Raymond L. Taylor - Saugus MA
Lee E. Burns - Woburn MA
James C. MacDonald - Reading MA

Assignee:

CVD, Inc. - Woburn MA

International Classification:

C23C 1600

US Classification:

118728

Abstract:

The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.

US Patent:

54651840, Nov 7, 1995

Filed:

Nov 17, 1994

Appl. No.:

8/340981

Inventors:

Michael A. Pickering - Dracut MA
Jitendra S. Goela - Andover MA
Lee E. Burns - Woburn MA

Assignee:

CVD, Incorporated - Woburn MA

International Classification:

G11B 5012
G11B 582
G11B 5147

US Classification:

360 9701

Abstract:

Silicon carbide is produced by chemical vapor deposition at temperatures from 1340. degree. -1380. degree. C. , deposition chamber pressures of 180-200 torr, H. sub. 2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2. mu. m/min. Furthermore, H. sub. 2 supplied as a part of the gas stream contains less than about 1 part per million (ppm) O. sub. 2 gas, and various means are provided to exclude particulate material from the deposition chamber. The silicon carbide is polishable to

US Patent:

54746132, Dec 12, 1995

Filed:

May 1, 1995

Appl. No.:

8/432342

Inventors:

Michael A. Pickering - Dracut MA
Jitendra S. Goela - Andover MA
Lee E. Burns - Woburn MA

Assignee:

CVD, Incorporated - Woburn MA

International Classification:

C23C 1600

US Classification:

118725

Abstract:

Silicon carbide is produced by chemical vapor deposition at temperatures from 1340. degree. -1380. degree. C. , deposition chamber pressures of 180-200 torr, H. sub. 2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2. mu. m/min. Furthermore, H. sub. 2 supplied as a part of the gas stream contains less than about 1 part per million (ppm) O. sub. 2 gas, and various means are provided to exclude particulate material from the deposition chamber. The silicon carbide is polishable to

US Patent:

56861958, Nov 11, 1997

Filed:

Jan 24, 1995

Appl. No.:

8/378030

Inventors:

Raymond L. Taylor - Saugus MA
Lee E. Burns - Woburn MA
James C. MacDonald - Reading MA

Assignee:

CVD, Inc. - Woburn MA

International Classification:

B32B 1800

US Classification:

428698

Abstract:

The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.