Lei A Jiang

US Patent:

6883153, Apr 19, 2005

Filed:

Jan 10, 2003

Appl. No.:

10/340534

Inventors:

Lei Jiang - Camas WA, US
Sadasivan Shankar - Cupertino CA, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

G06F017/50

US Classification:

716 6, 716 5, 716 19, 716 20

Abstract:

An efficient TCAD tool to analyze the variation of topography and thickness of interconnects and components of integrated circuits introduced by multiple-layer chemical-mechanical planarization (CMP). Contact stress distribution is determined on all scales as a function of topography. A formulation is used relating the pad deformation and therefore stress directly to pattern topography ({d}), and the pad mechanical properties. The 3-dimensional stress and deformation field is described, along with representation of the statistical pad roughness and slurry thickness information. These process conditions are also functions of the surface topography and contact regimes. The stress-topography relationship is represented as [A]{P}={d}, where [A] is the influence coefficient matrix determined by the contact mechanics, and {P} and {d} represent local stress and topography on patterns. With given initial topography and slurry rate kinetics, the surface evolution at each time step of CMP can be traced iteratively to obtain post-CMP topography.

US Patent:

6887131, May 3, 2005

Filed:

Aug 27, 2002

Appl. No.:

10/228094

Inventors:

Lei Jiang - Aloha OR, US
Sadasivan Shankar - Cupertino CA, US
Paul Fischer - Portland OR, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

B24B009/00

US Classification:

451 28, 451 54, 451 41

Abstract:

A method is provided for creating a polish pad. This may involve determining a design layout of a wafer. The design layout may include a distribution of metal line features on the wafer. A polish pad design may be created/determined based on the determined layer. The polish pad may have asperities having a width greater than a width of metal line features of the wafer.

US Patent:

6908370, Jun 21, 2005

Filed:

Dec 4, 2003

Appl. No.:

10/728550

Inventors:

Lei Jiang - Camas WA, US
Jin Liu - Albuquerque NM, US
Sadasivan Shankar - Cupertino CA, US
Thomas Bramblett - Banks OR, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

B24B001/00

US Classification:

451 60, 451444, 451446

Abstract:

An apparatus for polishing a wafer comprising a rotatable polishing pad having a center of rotation and a rinse delivery conduit positioned adjacent to the polishing pad and substantially in radial alignment with the center. The rinse delivery conduit includes a plurality of nozzles to dispense a rinsing liquid. In one embodiment, the plurality of nozzles are configured and positioned to generate a higher flow rate of the rinsing liquid at the end of the rinse delivery conduit proximate to the center than at the end of the rinse delivery conduit distal to the center. In another embodiment, the rinse delivery conduit has a proximal end which is substantially adjacent the center and the distal end which is approximately adjacent an outer periphery of the pad.

US Patent:

7021999, Apr 4, 2006

Filed:

Apr 5, 2005

Appl. No.:

11/099926

Inventors:

Lei Jiang - Camas WA, US
Jin Liu - Albuquerque NM, US
Sadasivan Shankar - Cupertino CA, US
Thomas Bramblett - Banks OR, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

B24B 1/00

US Classification:

451 60, 451444, 451446

Abstract:

An apparatus for polishing a wafer comprising a rotatable polishing pad having a center of rotation and a rinse delivery conduit positioned adjacent to the polishing pad and substantially in radial alignment with the center. The rinse delivery conduit includes a plurality of nozzles to dispense a rinsing liquid. In one embodiment, the plurality of nozzles are configured and positioned to generate a higher flow rate of the rinsing liquid at the end of the rinse delivery conduit proximate to the center than at the end of the rinse delivery conduit distal to the center. In another embodiment, the rinse delivery conduit has a proximal end which is substantially adjacent the center and the distal end which is approximately adjacent an outer periphery of the pad.

US Patent:

20040159923, Aug 19, 2004

Filed:

Feb 15, 2003

Appl. No.:

10/367266

Inventors:

Sergei Skokov - San Jose CA, US
Lei Jiang - Aloha OR, US
Sadasivan Shankar - Cupertino CA, US

International Classification:

H01L023/02

US Classification:

257/678000

Abstract:

A cyclotene chemical structure may be modified to reduce its curing temperature. With the reduced curing temperature, the material may be highly advantageous as an underfill material for surface nonpackaging.

US Patent:

20050054143, Mar 10, 2005

Filed:

Sep 10, 2004

Appl. No.:

10/939226

Inventors:

Sergei Skokov - San Jose CA, US
Lei Jiang - Aloha OR, US
Sadasivan Shankar - Cupertino CA, US

International Classification:

H01L021/44
H01L021/48
H01L021/50
H01L023/02

US Classification:

438123000

Abstract:

A cyclotene chemical structure may be modified to reduce its curing temperature. With the reduced curing temperature, the material may be highly advantageous as an underfill material for surface nonpackaging.

US Patent:

20060138087, Jun 29, 2006

Filed:

Dec 29, 2004

Appl. No.:

11/026322

Inventors:

Harsono Simka - Saratoga CA, US
Sadasivan Shankar - Cupertino CA, US
Lei Jiang - Camas WA, US
Paul Fischer - Portland OR, US
Anne Miller - Portland OR, US
Kenneth Cadien - Portland OR, US

International Classification:

C09K 13/00
C03C 15/00
H01L 21/302
B44C 1/22

US Classification:

216088000, 438692000, 252079100, 216089000

Abstract:

A slurry for use in a chemical mechanical polishing process for planarizing copper-based metal structures on a substrate comprises an oxidizer, an organic complexing agent, surfactants, and a plurality of copper-based metal abrasive particles, wherein the copper in the copper-based metal is capable of dissolving into the slurry and forming copper ion complexes. During the chemical mechanical polishing process, the copper removal rate may be selectively increased by increasing the concentration of copper metal abrasive particles in the slurry, and the copper removal rate may be selectively decreased by decreasing the concentration of copper metal abrasive particles in the slurry.

US Patent:

20080213995, Sep 4, 2008

Filed:

Mar 2, 2007

Appl. No.:

11/713215

Inventors:

Tatyana N. Andryushchenko - Portland OR, US
Radek P. Chalupa - Hillsboro OR, US
Anne E. Miller - Portland OR, US
Lei Jiang - Camas WA, US

International Classification:

H01L 21/44
C25D 17/00

US Classification:

438653, 204194, 257E2104

Abstract:

In one embodiment, the present invention includes a method for forming a dielectric layer on a semiconductor wafer and patterning at least one opening in the dielectric layer, depositing a barrier layer over the dielectric layer, depositing a conductive layer over the barrier layer, and electropolishing the conductive layer while ultrasonically agitating the semiconductor wafer until a predetermined amount of the conductive layer remains over the barrier layer. Other embodiments are described and claimed.