Li Chieh Chang

US Patent:

7031183, Apr 18, 2006

Filed:

Dec 8, 2003

Appl. No.:

10/730239

Inventors:

Gloria J. Kerszykowski - Fountain Hills AZ, US
Li Hsin Chang - Chandler AZ, US
Mark A. Durlam - Chandler AZ, US
Mitchell T. Lien - Gilbert AZ, US
Thomas V. Meixner - Gilbert AZ, US
Loren J. Wise - Tempe AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

G11C 7/00

US Classification:

365158, 365161

Abstract:

A magnetoresistive random access memory (MRAM) is embedded with another circuit type. Logic, such as a processing unit, is particularly well-suited circuit type for embedding with MRAM. The embedding is made more efficient by using a metal layer that is used as part of the interconnect for the other circuit also as part of the MRAM cell. The MRAM cells are all written by program lines, which are the two lines that cross to define a cell to be written. Thus, the design is simplified because there is commonality of usage of the metal line that is used for one of the program lines for the MRAM and for one of the interconnect lines for the logic.