Ling Zhang

US Patent:

8232568, Jul 31, 2012

Filed:

Aug 21, 2009

Appl. No.:

12/545358

Inventors:

Ling Zhang - San Jose CA, US
Steven D. Lester - Palo Alto CA, US
Jeffrey C. Ramer - Sunnyvale CA, US

Assignee:

Bridgelux, Inc. - Livermore CA

International Classification:

H01L 33/00

US Classification:

257 94, 257 98, 257190, 257E51021

Abstract:

A light emitting device and method for making the same are disclosed. The device includes an active layer disposed between first and second layers. The first layer has top and bottom surfaces. The top surface includes a first material of a first conductivity type, including a plurality of pits in the substantially planar surface. The active layer overlies the top surface of the first layer and conforms to the top surface, the active layer generating light characterized by a wavelength when holes and electrons recombine therein. The second layer includes a second material of a second conductivity type, the second layer overlying the active layer and conforming to the active layer. The device can be constructed on a substrate having a lattice constant sufficiently different from that of the first material to give rise to dislocations in the first layer that are used to form the pits.

US Patent:

8525221, Sep 3, 2013

Filed:

Nov 25, 2009

Appl. No.:

12/626474

Inventors:

Steven Lester - Sunnyvale CA, US
Jeff Ramer - Sunnyvale CA, US
Jun Wu - Irvine CA, US
Ling Zhang - San Jose CA, US

Assignee:

Toshiba Techno Center, Inc. - Tokyo

International Classification:

H01L 33/00

US Classification:

257101, 257E2712, 257 79, 257 12, 257 1, 257 15, 438 22, 438 29, 438 42, 438 43, 438 44

Abstract:

A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits lights when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.

US Patent:

20060278660, Dec 14, 2006

Filed:

Jun 8, 2005

Appl. No.:

11/147205

Inventors:

Ling Zhang - Rowland Heights CA, US

International Classification:

G01F 11/00

US Classification:

222262000, 222333000

Abstract:

A shoulder supported, hand directed automotive grease gun in which a reciprocating piston transfers fluid from a supply tube to an outlet conduit. A battery powered motor and gear transmission rotate a disc on which is mounted an eccentric pin. The pin forcibly moves a piston holder between low friction parallel guides so as to advance the piston with its transferred fluid toward the outlet conduit. A first spring constantly biases the piston holder toward the pin so that the piston reciprocates rapidly as the disc rotates. An adjustable spring-loaded ball seal unit with an adjustable spring seat controls flow of the fluid. A fluid supply tube heating device alters fluid density to also control fluid flow. An auxiliary shoulder strap relieves pressure on an operator's wrist and transfers backpressure and tool weight to the operators body.

US Patent:

20070081902, Apr 12, 2007

Filed:

Sep 28, 2006

Appl. No.:

11/536049

Inventors:

Ling Zhang - Rowland Heights CA, US
Ning Zhang - Taicang City, CN

International Classification:

F04B 49/10
F04B 49/06

US Classification:

417032000, 417044200

Abstract:

A digital air compressor control system is for creating a customized air compressor. The system includes microprocessor, power supply, electric sensors and electric valve. In general, digital control system includes four overall components, which may be present in a variety of electric-mechanical formulations. The first component is the microprocessor. It controls the system's or component's action. It receives signals and sends out action commands according to user requirements. Microprocessor directs most every component action. The second component is power control system. Under microprocessor control, the power control system can supply or stop supplying current to electric components allowing accurate functionality. The next component is sensors. They include pressure sensors and temperature sensors. The pressure sensor picks up the pressure data from the control pressure area. The sensor sends the signal to the microprocessor for processing, and issues appropriate commands that the designer programmed or that the user preset. The temperature sensor function is similar to the pressure sensor, one difference is that the signal comes from the control temperature area. The microprocessor receives these signals and sends commands to control power on or off; motor run or stop; valve open or close. Another component is the electric valve. These valves follow the microprocessor command to either open or close to allow the air tank to reach preset pressure. It also releases tube pressure air from the pump to tank.

US Patent:

20130316483, Nov 28, 2013

Filed:

Aug 5, 2013

Appl. No.:

13/959297

Inventors:

STEVEN LESTER - SUNNYVALE CA, US
JEFF RAMER - SUNNYVALE CA, US
JUN WU - IRVINE CA, US
LING ZHANG - SAN JOSE CA, US

Assignee:

TOSHIBA TECHNO CENTER INC. - Tokyo

International Classification:

H01L 33/06

US Classification:

438 47

Abstract:

A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.

US Patent:

20220372114, Nov 24, 2022

Filed:

May 17, 2022

Appl. No.:

17/746768

Inventors:

- Albany NY, US
Dan LUO - Newark CA, US
Ling ZHANG - Menlo Park CA, US
Vydehi KANNEGANTI - Hayward CA, US
Joyce YU - Menlo Park CA, US
Sophie YANG - Mountain View CA, US
Lequn ZHAO - San Francisco CA, US
Hua TU - Flower Mound TX, US

International Classification:

C07K 16/10
A61P 31/14

Abstract:

The present disclosure provides antibodies that bind to the SARS-CoV-2 spike protein, as well as compositions containing the same, and methods of making and using such a composition for treating, preventing, and/or detecting SARS-CoV-2 infection.

US Patent:

20230115257, Apr 13, 2023

Filed:

May 17, 2022

Appl. No.:

17/746859

Inventors:

- Albany NY, US
Dan LUO - Newark CA, US
Ling ZHANG - Menlo Park CA, US
Vydehi KANNEGANTI - Hayward CA, US
Joyce YU - Menlo Park CA, US
Sophie YANG - Mountain View CA, US
Lequn ZHAO - c/o Curia IP Holdings, LLC CA, US
Hua TU - Flower Mound TX, US
Xiaomei GE - Foster City CA, US

International Classification:

C07K 16/10
G01N 33/569

Abstract:

Embodiments include monoclonal antibodies (mAbs) that recognize SARS-Cov-2 spike protein. The mAbs are capable of distinguishing among variants of the virus. The present disclosure also provides a composition and methods of making and using such a composition for treating, preventing, and/or detecting SARS-CoV-2 infection.

US Patent:

20190272994, Sep 5, 2019

Filed:

May 14, 2019

Appl. No.:

16/412328

Inventors:

- Sunnyvale CA, US
Jason M. JEWELL - Santa Clara CA, US
Chaowei WANG - San Diego CA, US
Ji WU - San Jose CA, US
Emmett Edward PERL - Santa Clara CA, US
Claudio Andrés CAÑIZARES - Morgan Hill CA, US
Ling ZHANG - Saratoga CA, US
Brendan M. KAYES - Los Gatos CA, US

International Classification:

H01L 21/02
C30B 25/02
C30B 25/10
C30B 25/18
C30B 29/42

Abstract:

Aspects of the disclosure relate to processes for epitaxial growth of III-V compound of (Al)GaInP material at high rates, such as about 8 μm/hr, 10 μm/hr, 20 μm/hr, 30 μm/hr, 40 μm/hr, and 8-120 μm/hr deposition rates. The high growth-rate deposited (Al)InGaP materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a chemical vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers containing gallium aluminum indium phosphide, gallium indium phosphide, derivatives thereof, alloys thereof, or combinations thereof.