Ling Z Zhang

US Patent:

8232568, Jul 31, 2012

Filed:

Aug 21, 2009

Appl. No.:

12/545358

Inventors:

Ling Zhang - San Jose CA, US
Steven D. Lester - Palo Alto CA, US
Jeffrey C. Ramer - Sunnyvale CA, US

Assignee:

Bridgelux, Inc. - Livermore CA

International Classification:

H01L 33/00

US Classification:

257 94, 257 98, 257190, 257E51021

Abstract:

A light emitting device and method for making the same are disclosed. The device includes an active layer disposed between first and second layers. The first layer has top and bottom surfaces. The top surface includes a first material of a first conductivity type, including a plurality of pits in the substantially planar surface. The active layer overlies the top surface of the first layer and conforms to the top surface, the active layer generating light characterized by a wavelength when holes and electrons recombine therein. The second layer includes a second material of a second conductivity type, the second layer overlying the active layer and conforming to the active layer. The device can be constructed on a substrate having a lattice constant sufficiently different from that of the first material to give rise to dislocations in the first layer that are used to form the pits.

US Patent:

8525221, Sep 3, 2013

Filed:

Nov 25, 2009

Appl. No.:

12/626474

Inventors:

Steven Lester - Sunnyvale CA, US
Jeff Ramer - Sunnyvale CA, US
Jun Wu - Irvine CA, US
Ling Zhang - San Jose CA, US

Assignee:

Toshiba Techno Center, Inc. - Tokyo

International Classification:

H01L 33/00

US Classification:

257101, 257E2712, 257 79, 257 12, 257 1, 257 15, 438 22, 438 29, 438 42, 438 43, 438 44

Abstract:

A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits lights when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.

US Patent:

20130316483, Nov 28, 2013

Filed:

Aug 5, 2013

Appl. No.:

13/959297

Inventors:

STEVEN LESTER - SUNNYVALE CA, US
JEFF RAMER - SUNNYVALE CA, US
JUN WU - IRVINE CA, US
LING ZHANG - SAN JOSE CA, US

Assignee:

TOSHIBA TECHNO CENTER INC. - Tokyo

International Classification:

H01L 33/06

US Classification:

438 47

Abstract:

A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.

US Patent:

20220372114, Nov 24, 2022

Filed:

May 17, 2022

Appl. No.:

17/746768

Inventors:

- Albany NY, US
Dan LUO - Newark CA, US
Ling ZHANG - Menlo Park CA, US
Vydehi KANNEGANTI - Hayward CA, US
Joyce YU - Menlo Park CA, US
Sophie YANG - Mountain View CA, US
Lequn ZHAO - San Francisco CA, US
Hua TU - Flower Mound TX, US

International Classification:

C07K 16/10
A61P 31/14

Abstract:

The present disclosure provides antibodies that bind to the SARS-CoV-2 spike protein, as well as compositions containing the same, and methods of making and using such a composition for treating, preventing, and/or detecting SARS-CoV-2 infection.

US Patent:

20230115257, Apr 13, 2023

Filed:

May 17, 2022

Appl. No.:

17/746859

Inventors:

- Albany NY, US
Dan LUO - Newark CA, US
Ling ZHANG - Menlo Park CA, US
Vydehi KANNEGANTI - Hayward CA, US
Joyce YU - Menlo Park CA, US
Sophie YANG - Mountain View CA, US
Lequn ZHAO - c/o Curia IP Holdings, LLC CA, US
Hua TU - Flower Mound TX, US
Xiaomei GE - Foster City CA, US

International Classification:

C07K 16/10
G01N 33/569

Abstract:

Embodiments include monoclonal antibodies (mAbs) that recognize SARS-Cov-2 spike protein. The mAbs are capable of distinguishing among variants of the virus. The present disclosure also provides a composition and methods of making and using such a composition for treating, preventing, and/or detecting SARS-CoV-2 infection.

US Patent:

20190272994, Sep 5, 2019

Filed:

May 14, 2019

Appl. No.:

16/412328

Inventors:

- Sunnyvale CA, US
Jason M. JEWELL - Santa Clara CA, US
Chaowei WANG - San Diego CA, US
Ji WU - San Jose CA, US
Emmett Edward PERL - Santa Clara CA, US
Claudio Andrés CAÑIZARES - Morgan Hill CA, US
Ling ZHANG - Saratoga CA, US
Brendan M. KAYES - Los Gatos CA, US

International Classification:

H01L 21/02
C30B 25/02
C30B 25/10
C30B 25/18
C30B 29/42

Abstract:

Aspects of the disclosure relate to processes for epitaxial growth of III-V compound of (Al)GaInP material at high rates, such as about 8 μm/hr, 10 μm/hr, 20 μm/hr, 30 μm/hr, 40 μm/hr, and 8-120 μm/hr deposition rates. The high growth-rate deposited (Al)InGaP materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a chemical vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers containing gallium aluminum indium phosphide, gallium indium phosphide, derivatives thereof, alloys thereof, or combinations thereof.

US Patent:

20160155881, Jun 2, 2016

Filed:

Jan 25, 2016

Appl. No.:

15/006003

Inventors:

- Sunnyvale CA, US
Gregg S. HIGASHI - San Jose CA, US
Sam COWLEY - Mountain View CA, US
Christopher FRANCE - Campbell CA, US
Ling ZHANG - San Jose CA, US
Gang HE - Cupertino CA, US

International Classification:

H01L 31/109
H01L 31/18
H01L 31/0232

Abstract:

An optoelectronic device with high band-gap absorbers optimized for indoor use and a method of manufacturing are disclosed. The optoelectronic semiconductor device comprises a p-n structure made of one or more compound semiconductors, wherein the p-n structure comprises a base layer and an emitter layer, wherein the base and/or emitter layers comprise materials whose quantum efficiency spectrum is well-matched to a spectrum of incident light, wherein the incident light is from a light source other than the sun; and wherein the device is a flexible single-crystal device. The method for forming an optoelectronic device optimized for the conversion of light from non-solar illumination sources into electricity, comprises depositing a buffer layer on a wafer; depositing a release layer above the buffer layer; depositing a p-n structure above the release layer; and lifting off the p-n structure from the wafer.

US Patent:

20140151728, Jun 5, 2014

Filed:

Feb 7, 2014

Appl. No.:

14/175623

Inventors:

- Tokyo, JP
Jeff RAMER - Sunnyvale CA, US
Jun WU - San Ramon CA, US
Ling ZHANG - San Jose CA, US

Assignee:

TOSHIBA TECHNO CENTER INC. - Tokyo

International Classification:

H01L 33/22
H01L 33/32
H01L 33/02

US Classification:

257 94

Abstract:

A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.