Lingyi A Zheng

US Patent:

7771537, Aug 10, 2010

Filed:

May 4, 2006

Appl. No.:

11/418337

Inventors:

Kevin L. Beaman - Boise ID, US
Trung T. Doan - Vallejo CA, US
Lyle D. Breiner - Meridian ID, US
Ronald A. Weimer - Boise ID, US
Er-Xuan Ping - Meridian ID, US
David J. Kubista - Nampa ID, US
Cem Basceri - Reston VA, US
Lingyi A. Zheng - Manassas VA, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

C23C 16/00

US Classification:

118725

Abstract:

The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e. g. , in depositing a heat-reflective material via CVD. One exemplary embodiment provides a method that involves monitoring a first temperature outside the deposition chamber and a second temperature inside the deposition chamber. An internal temperature in the deposition chamber can be increased in accordance with a ramp profile by (a) comparing a control temperature to a target temperature, and (b) selectively delivering heat to the deposition chamber in response to a result of the comparison. The target temperature may be determined in accordance with the ramp profile, but the control temperature in one implementation alternates between the first temperature and the second temperature.

US Patent:

8384192, Feb 26, 2013

Filed:

Mar 14, 2011

Appl. No.:

13/047430

Inventors:

Lingyi A. Zheng - Manassas VA, US
Trung T. Doan - Vallejo CA, US
Lyle D. Breiner - Meridian ID, US
Er-Xuan Ping - Meridian ID, US
Kevin L. Beaman - Boise ID, US
Ronald A. Weimer - Boise ID, US
Cem Basceri - Cary NC, US
David J. Kubista - Nampa ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21/02

US Classification:

257534, 257301, 257E29342

Abstract:

The present disclosure provides small scale capacitors (e. g. , DRAM capacitors) and methods of forming such capacitors. One exemplary implementation provides a method of fabricating a capacitor that includes sequentially forming a first electrode, a dielectric layer, and a second electrode. At least one of the electrodes may be formed by a) reacting two precursors to deposit a first conductive layer at a first deposition rate, and b) depositing a second conductive layer at a second, lower deposition rate by depositing a precursor layer of one precursor at least one monolayer thick and exposing that precursor layer to another precursor to form a nanolayer reaction product. The second conductive layer may be in contact with the dielectric layer and have a thickness of no greater than about 50 Å.

US Patent:

8518184, Aug 27, 2013

Filed:

Jul 20, 2010

Appl. No.:

12/840153

Inventors:

Kevin L. Beaman - Boise ID, US
Trung T. Doan - Vallejo CA, US
Lyle D. Breiner - Meridian ID, US
Ronald A. Weimer - Boise ID, US
Er-Xuan Ping - Meridian ID, US
David J. Kubista - Nampa ID, US
Cem Basceri - Los Gatos CA, US
Lingyi A. Zheng - Manassas VA, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

C23C 16/00

US Classification:

118725

Abstract:

The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e. g. , in depositing a heat-reflective material via CVD. One exemplary embodiment provides a method that involves monitoring a first temperature outside the deposition chamber and a second temperature inside the deposition chamber. An internal temperature in the deposition chamber can be increased in accordance with a ramp profile by (a) comparing a control temperature to a target temperature, and (b) selectively delivering heat to the deposition chamber in response to a result of the comparison. The target temperature may be determined in accordance with the ramp profile, but the control temperature in one implementation alternates between the first temperature and the second temperature.

US Patent:

20060196538, Sep 7, 2006

Filed:

May 2, 2006

Appl. No.:

11/416871

Inventors:

David Kubista - Nampa ID, US
Trung Doan - Vallejo CA, US
Lyle Breiner - Meridian ID, US
Ronald Weimer - Boise ID, US
Kevin Beaman - Boise ID, US
Er-Xuan Ping - Meridian ID, US
Lingyi Zheng - Manassas VA, US
Cem Basceri - Reston VA, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

F17D 1/16
C23C 16/00

US Classification:

137014000, 118715000, 427248100

Abstract:

Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers are disclosed herein. In one embodiment, the system includes a gas phase reaction chamber, a first exhaust line coupled to the reaction chamber, first and second traps each in fluid communication with the first exhaust line, and a vacuum pump coupled to the first exhaust line to remove gases from the reaction chamber. The first and second traps are operable independently to individually and/or jointly collect byproducts from the reaction chamber. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

US Patent:

20060198955, Sep 7, 2006

Filed:

May 3, 2006

Appl. No.:

11/416866

Inventors:

Lingyi Zheng - Manassas VA, US
Trung Doan - Vallejo CA, US
Lyle Breiner - Meridian ID, US
Er-Xuan Ping - Meridian ID, US
Ronald Weimer - Boise ID, US
David Kubista - Nampa ID, US
Kevin Beaman - Boise ID, US
Cem Basceri - Reston VA, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

C23C 16/00

US Classification:

427248100, 118715000, 118728000

Abstract:

The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of these apparatus include microfeature workpiece holders that include gas distributors. One exemplary implementation provides a microfeature workpiece holder adapted to hold a plurality of microfeature workpieces. This workpiece holder includes a plurality of workpiece supports and a gas distributor. The workpiece supports are adapted to support a plurality of microfeature workpieces in a spaced-apart relationship to define a process space adjacent a surface of each microfeature workpiece. The gas distributor includes an inlet and a plurality of outlets, with each of the outlets positioned to direct a flow of process gas into one of the process spaces.

US Patent:

20060205187, Sep 14, 2006

Filed:

May 9, 2006

Appl. No.:

11/430492

Inventors:

Lingyi Zheng - Manassas VA, US
Trung Doan - Vallejo CA, US
Lyle Breiner - Meridian ID, US
Er-Xuan Ping - Meridian ID, US
Kevin Beaman - Boise ID, US
Ronald Weimer - Boise ID, US
David Kubista - Nampa ID, US
Cem Basceri - Reston VA, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21/20

US Classification:

438478000

Abstract:

The present disclosure suggests several systems and methods for batch processing of microfeature workpieces, e.g., semiconductor wafers or the like. One exemplary implementation provides a method of depositing a reaction product on each of a batch of workpieces positioned in a process chamber in a spaced-apart relationship. A first gas may be delivered to an elongate first delivery conduit that includes a plurality of outlets spaced along a length of the conduit. A first gas flow may be directed by the outlets to flow into at least one of the process spaces between adjacent workpieces along a first vector that is transverse to the direction in which the workpieces are spaced. A second gas may be delivered to an elongate second delivery conduit that also has outlets spaced along its length. A second gas flow of the second gas may be directed by the outlets to flow into the process spaces along a second vector that is transverse to the first direction.

US Patent:

20060213440, Sep 28, 2006

Filed:

May 9, 2006

Appl. No.:

11/430328

Inventors:

Lingyi Zheng - Manassas VA, US
Trung Doan - Vallejo CA, US
Lyle Breiner - Meridian ID, US
Er-Xuan Ping - Meridian ID, US
Kevin Beaman - Boise ID, US
Ronald Weimer - Boise ID, US
David Kubista - Nampa ID, US
Cem Basceri - Reston VA, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

C23C 16/00

US Classification:

118715000

Abstract:

The present disclosure suggests several systems and methods for batch processing of microfeature workpieces, e.g., semiconductor wafers or the like. One exemplary implementation provides a method of depositing a reaction product on each of a batch of workpieces positioned in a process chamber in a spaced-apart relationship. A first gas may be delivered to an elongate first delivery conduit that includes a plurality of outlets spaced along a length of the conduit. A first gas flow may be directed by the outlets to flow into at least one of the process spaces between adjacent workpieces along a first vector that is transverse to the direction in which the workpieces are spaced. A second gas may be delivered to an elongate second delivery conduit that also has outlets spaced along its length. A second gas flow of the second gas may be directed by the outlets to flow into the process spaces along a second vector that is transverse to the first direction.