Search

Liqing A Wen

age ~61

from Mesa, AZ

Also known as:
  • Liqing Q Wen
  • Liging Wen
  • Wen Liging
  • Wen Liqing
  • Li Qingwen
  • Qing Wen Li
  • Qingwen Li
Phone and address:
3350 Jacinto Ave, Mesa, AZ 85204

Liqing Wen Phones & Addresses

  • 3350 Jacinto Ave, Mesa, AZ 85204
  • Tempe, AZ
  • Queen Creek, AZ
  • Payson, AZ
  • Chandler, AZ
  • Phoenix, AZ
  • Grand Rapids, MI
  • Louisville, KY
  • Maricopa, AZ
  • 3909 E Nora Cir, Mesa, AZ 85215

Us Patents

  • Ultrapure Colloidal Silica For Use In Chemical Mechanical Polishing Applications

    view source
  • US Patent:
    20070075292, Apr 5, 2007
  • Filed:
    Sep 22, 2006
  • Appl. No.:
    11/526132
  • Inventors:
    Deepak Mahulikar - Madison CT, US
    Yuhu Wang - Santa Rosa CA, US
    Ken Delbridge - Chandler AZ, US
    Gert Moyaerts - Phoenix AZ, US
    Saeed Mohseni - Sylvania OH, US
    Nichole Koontz - Mess AZ, US
    Bin Hu - Chandler AZ, US
    Liqing Wen - Mesa AZ, US
  • International Classification:
    C23F 1/14
    C09K 13/00
  • US Classification:
    252079100, 051308000, 216089000
  • Abstract:
    A method of chemical mechanical polishing a surface of a substrate including the step of: contacting the substrate and a composition including a plurality of colloidal silica particles having less than 200 ppb of each trace metal impurity, excluding potassium and sodium, have less than 2 ppm residual alcohol and wherein the cumulative concentration of the trace metal, excluding potassium and sodium, is in the range from about 0.5 to about 5 ppm; and a medium for suspending the particles; wherein the composition is an ultrapure colloidal silica dispersion; and wherein the contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.
  • Ultrapure Colloidal Silica For Use In Chemical Mechanical Polishing Applications

    view source
  • US Patent:
    20070254964, Nov 1, 2007
  • Filed:
    Jun 15, 2007
  • Appl. No.:
    11/818730
  • Inventors:
    Deepak Mahulikar - Madison CT, US
    Yuhu Wang - Santa Rosa CA, US
    Ken Delbridge - Chandler AZ, US
    Gert Moyaerts - Phoenix AZ, US
    Saeed Mohseni - Sylvania OH, US
    Nichole Koontz - Mesa AZ, US
    Bin Hu - Chandler AZ, US
    Liqing Wen - Mesa AZ, US
  • International Classification:
    B01F 3/12
    B08B 7/00
  • US Classification:
    516081000, 134007000, 051308000, 516086000
  • Abstract:
    An ultrapure colloidal silica dispersion comprising colloidal silica particles having a mean or aggregate particle size from about 10 to about 200 nm, wherein the colloidal silica dispersion has less than 200 ppb of each trace metal impurity disposed therein, excluding potassium and sodium, and have less than 2 ppm residual alcohol.
  • Ultrapure Colloidal Silica For Use In Chemical Mechanical Polishing Applications

    view source
  • US Patent:
    20120145950, Jun 14, 2012
  • Filed:
    Feb 24, 2012
  • Appl. No.:
    13/405027
  • Inventors:
    Deepak Mahulikar - Madison CT, US
    Yuhu Wang - Santa Rosa CA, US
    Ken A. Delbridge - Chandler AZ, US
    Gert R.M. Moyaerts - Phoenix AZ, US
    Saeed H. Mohseni - Sylvania OH, US
    Nichole R. Koontz - Mesa AZ, US
    Bin Hu - Chandler AZ, US
    Liqing Wen - Mesa AZ, US
  • International Classification:
    C09K 13/00
    B82Y 30/00
  • US Classification:
    252 791, 977895
  • Abstract:
    An ultrapure colloidal silica dispersion comprising colloidal silica particles having a mean or aggregate particle size from about 10 to about 200 nm, wherein the colloidal silica dispersion has less than 200 ppb, of each trace metal impurity disposed therein, excluding potassium and sodium, and have less than 2 ppm residual alcohol. A method for producing and using the same is also disclosed.
  • Chemical Mechanical Polishing Compositions And Methods Of Use Thereof

    view source
  • US Patent:
    20220195241, Jun 23, 2022
  • Filed:
    Dec 10, 2021
  • Appl. No.:
    17/547352
  • Inventors:
    - North Kingstown RI, US
    Bin Hu - Chandler AZ, US
    Ting-Kai Huang - Tainan City, TW
    Shu-Wei Chang - Taoyuan District, TW
    Liqing (Richard) Wen - Mesa AZ, US
  • Assignee:
    FUJIFILM ELECTRIC MATERIALS U.S.A., INC. - North Kingstown RI
  • International Classification:
    C09G 1/02
    H01L 21/306
  • Abstract:
    A polishing composition includes at least one abrasive, at least one organic acid, at least one anionic surfactant comprising at least a phosphate, at least one phosphonic acid compound having a molecular weight below 500 g/mol, at least one azole containing compound, at least one alkylamine compound having a 6-24 carbon alkyl chain, and an aqueous solvent, and optionally, a pH adjuster.
  • Polishing Compositions And Methods Of Use Thereof

    view source
  • US Patent:
    20210301177, Sep 30, 2021
  • Filed:
    Mar 29, 2021
  • Appl. No.:
    17/214987
  • Inventors:
    - N. Kingstown RI, US
    Ting-Kai Huang - Tainan City, TW
    Yannan Liang - Gilbert AZ, US
    Shu-Wei Chang - Taoyuan City, TW
    Sung Tsai Lin - Taoyuan City, TW
    Liqing Wen - Mesa AZ, US
  • International Classification:
    C09G 1/02
    H01L 21/321
  • Abstract:
    This disclosure features a polishing composition that includes at least one abrasive; at least one first corrosion inhibitor that includes a phosphate or a phosphonate group; at least one complexing agent; at least one second corrosion inhibitor that is at least one azole compound; and optionally a pH adjuster.
  • Barrier Ruthenium Chemical Mechanical Polishing Slurry

    view source
  • US Patent:
    20210261822, Aug 26, 2021
  • Filed:
    May 12, 2021
  • Appl. No.:
    17/318011
  • Inventors:
    - North Kingstown RI, US
    Bin Hu - Chandler AZ, US
    Liqing (Richard) Wen - Mesa AZ, US
    Yannan Liang - Gilbert AZ, US
    Ting-Kai Huang - Taiwan (ROC), CN
  • Assignee:
    FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. - Rehovot
  • International Classification:
    C09G 1/02
    H01L 21/321
    C09K 3/14
    C09G 1/06
    C09K 13/06
    C09G 1/04
    B24B 1/00
    C09G 1/00
    B24B 37/04
    H01L 21/306
  • Abstract:
    A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.
  • Polishing Compositions And Methods Of Use Thereof

    view source
  • US Patent:
    20210253903, Aug 19, 2021
  • Filed:
    Feb 8, 2021
  • Appl. No.:
    17/169676
  • Inventors:
    - N. Kingstown RI, US
    Tawei Lin - Chandler AZ, US
    Bin Hu - Chandler AZ, US
    Liqing Wen - Mesa AZ, US
    Yannan Liang - Gilbert AZ, US
  • International Classification:
    C09G 1/02
    C09K 15/30
    H01L 21/321
  • Abstract:
    A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.
  • Polishing Compositions And Methods Of Use Thereof

    view source
  • US Patent:
    20210253904, Aug 19, 2021
  • Filed:
    Feb 8, 2021
  • Appl. No.:
    17/169685
  • Inventors:
    - N. Kingstown RI, US
    Tawei Lin - Chandler AZ, US
    Bin Hu - Chandler AZ, US
    Liqing Wen - Mesa AZ, US
    Yannan Liang - Gilbert AZ, US
  • International Classification:
    C09G 1/02
    B24B 37/04
  • Abstract:
    A polishing composition, includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a ruthenium removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.
Name / Title
Company / Classification
Phones & Addresses
Liqing Wen
Principal
Beltz International, LLC
Nonclassifiable Establishments
3350 E Jacinto Ave, Mesa, AZ 85204
(480)2687588
Liqing Wen
Principal
WM PROPERTIES, LLC
Nonresidential Building Operator
3350 E Jacinto Ave, Mesa, AZ 85204

Youtube

Serendipity Chinese Drama Cast Real Name & Ag...

Serendipity Chinese Drama Cast Real Name & Ages| Li Qing Tian, Wen Mo ...

  • Duration:
    1m 48s

Li Qing Tian VS Wen Mo Yan (Serendipity) Comp...

Sky Li Qing Tian VS Wen Mo Yan Comparison, Biography, Age, Income, Aff...

  • Duration:
    4m 33s

Serendipity Chinese Drama Cast Real Name & Ag...

Serendipity 2021 Chinese Drama Real Cast Name & Ages || Li Qingtian, W...

  • Duration:
    2m 29s

Liqing to Parent Montage

  • Duration:
    5m 17s

What happened to China's Rural Fairy Princess...

Four months since She disappeared, what happened to her? For a deeper ...

  • Duration:
    15m 28s

- [MV]

  • Duration:
    8m 53s

Facebook

Liqing Wen Photo 1

Wen Liqing

view source
Liqing Wen Photo 2

Wen Liqing

view source

Get Report for Liqing A Wen from Mesa, AZ, age ~61
Control profile